US6207561B1
Expired / Lapsed
US
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Selective oxidation methods for metal oxide deposition on metals in capacitor fabrication
Assignee: Texas Instruments Inc
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Filing: 1999-07-29
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Granted: 2001-03-27
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Expires: 2019-07-29
Abstract
Abstract A cost-effective method for fabricating MIM capacitors ( 120 ). After metal ( 106 ) deposition, the metal oxide ( 108 ) is formed using an oxidation chemistry that includes CO2 and H2. The CO2/H2 gas ratio is controlled for selective oxidation. Thus, the metal ( 106 ) is effectively protected from oxidation due to the existence of both H2 and CO2 as strong reduction reagent.
Inventors
- 👤 Ming Hwang
- 👤 Robert Tsu
- 👤 Wei-Yung Hsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69392; H10P14/69393; H10P14/69394; H10P14/69398; Y; Y10; Y10S; Y10S438/00; Y10S438/909; Y10S438/957
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
59 words
A method of forming an integrated circuit, comprising the steps of: forming a metal layer over a structure; depositing a metal-oxide layer by selectively oxidizing a metal-bearing precursor in the presence of CO 2 and H 2 to form the metal-oxide layer over at least a portion of said metal layer while substantially protecting said metal layer from oxidation.
Claim 2
Independent Claim
59 words
A method of forming an integrated circuit, comprising the steps of: forming a metal layer over a structure; depositing a metal-oxide layer by selectively oxidizing a metal-bearing precursor in the presence of CO 2 and H 2 to form the metal-oxide layer over at least a portion of said metal layer while substantially protecting said metal layer from oxidation.
Claim 3
Dependent Claim
14 words
The method of claim 1 , wherein said metal layer is a capacitor electrode.
Claim 4
Dependent Claim
12 words
The method of claim 1 , wherein said metal layer comprises tungsten.
Claim 5
Dependent Claim
12 words
The method of claim 1 , wherein said metal layer comprises nickel.
Claim 6
Dependent Claim
12 words
The method of claim 1 , wherein said metal layer comprises cobalt.
Claim 7
Dependent Claim
13 words
The method of claim 1 wherein said metal layer comprises a metal nitride.
Claim 8
Dependent Claim
49 words
The method of claim 1 , wherein said metal-oxide layer comprises a material selected from the group consisting of Ta 2 O 5 , NB 2 O 5 , Al 2 O 3 , Y 2 O 3 , HfO 2 , TiO 2 , BaO, SrO and BST.
Claim 9
Dependent Claim
21 words
The method of claim 1 , further comprising the step of forming a top metal electrode over said metal oxide layer.
Claim 10
Dependent Claim
14 words
The method of claim 1 , wherein the metal-bearing precursor is a metal-organic precursor.
Claim 11
Dependent Claim
12 words
The method of claim 1 wherein the metal-bearing precursor is a metal-chloride.
Claim 12
Independent Claim
88 words
A method of fabricating a capacitor on an integrated circuit comprising the steps of: forming a diffusing barrier over a semiconductor body and over a portion of a dielectric formed over the semiconductor body; forming a first metal electrode over said diffusion barrier; forming a metal-oxide layer over said first metal electrode by selective oxidation of a metal-bearing precursor, using a chemistry that comprises CO 2 and H 2 to substantially protect said first metal electrode from oxidation; and forming a second metal electrode over said metal-oxide layer.
Claim 13
Independent Claim
88 words
A method of fabricating a capacitor on an integrated circuit comprising the steps of: forming a diffusing barrier over a semiconductor body and over a portion of a dielectric formed over the semiconductor body; forming a first metal electrode over said diffusion barrier; forming a metal-oxide layer over said first metal electrode by selective oxidation of a metal-bearing precursor, using a chemistry that comprises CO 2 and H 2 to substantially protect said first metal electrode from oxidation; and forming a second metal electrode over said metal-oxide layer.
Claim 14
Dependent Claim
15 words
The method of claim 11 , wherein said first and second metal electrodes comprise tungsten.
Claim 15
Dependent Claim
15 words
The method of claim 11 , wherein said first and second metal electrodes comprise nickel.
Claim 16
Dependent Claim
15 words
The method of claim 11 , wherein said first and second metal electrodes comprise cobalt.
Claim 17
Dependent Claim
17 words
The method of claim 11 , wherein said first and second metal electrodes comprise a metal nitride.
Claim 18
Dependent Claim
48 words
The method of claim 11 , wherein said metal-oxide layer comprises a material selected from the group consisting of Ta 2 O 5 , NB 2 O 5 , Al 2 O 3 , Y 2 O 3 , HfO 2 TiO 2 , BaO, SrO and BST.
Claim 19
Dependent Claim
14 words
The method of claim 11 , wherein the metal-bearing precursor is a metal-organic precursor.
Claim 20
Dependent Claim
13 words
The method of claim 11 , wherein the metal-bearing precursor is a metal-chloride.
References Cited (Backward Citations)
US5336638A
Cited
US5561082A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-26 | 2012-09-25 | 2013-03-27 | $7700.00 | Window Closed / Lapsed |