US6742248B2
Expired / Lapsed
US
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Method of forming a soldered electrical connection
Assignee: Boeing Co
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Filing: 2001-05-14
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Granted: 2004-06-01
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Expires: 2021-05-14
Abstract
Abstract A reliable, long-lived soldered electrical connection is made to a ceramic substrate having a thick-film metallization thereon, over which is deposited a joint-structure-stabilizing thin-film metallization. The thin-film metallization is a multilayered structure having an adhesion layer overlying and in contact with the thick-film metallization, a readily wettable base-metal layer overlying and in contact with the adhesion layer, and an oxidation-prevention layer overlying and in contact with the base-metal layer. An electrical conductor is soldered to the thin-film metallization of the ceramic substrate. The electrical conductor may be a bonding pad of a flip chip having a solder bump thereon.
Inventors
- 👤 Boon Wong
- 👤 Robert E. Silhavy
- 👤 Jennifer Shinno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:59
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/22; H05K3/24; H05K3/245; H05K3/246; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49126; Y10T29/4913; Y10T29/49144; Y10T29/49204; Y10T29/53; Y10T29/5313; Y10T29/53174; Y10T29/53178; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12611
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
84 words
A method of forming a soldered electrical connection, comprising the steps of providing a ceramic substrate having a thick-film metallization thereon; depositing a thin-film metallization overlying the thick-film metallization, the thin-film metallization comprising: an adhesion layer overlying and in contact with the thick-film metallization, a base-metal layer overlying and in contact with the adhesion layer, and an oxidation-prevention layer overlying and in contact with the base-metal layer; providing an electrical conductor; and soldering the electrical conductor to the thin-film metallization of the ceramic substrate.
Claim 2
Independent Claim
84 words
A method of forming a soldered electrical connection, comprising the steps of providing a ceramic substrate having a thick-film metallization thereon; depositing a thin-film metallization overlying the thick-film metallization, the thin-film metallization comprising: an adhesion layer overlying and in contact with the thick-film metallization, a base-metal layer overlying and in contact with the adhesion layer, and an oxidation-prevention layer overlying and in contact with the base-metal layer; providing an electrical conductor; and soldering the electrical conductor to the thin-film metallization of the ceramic substrate.
Claim 3
Dependent Claim
23 words
The method of claim 1 , wherein the adhesion layer is a metal selected from the group consisting of titanium, titanium-tungsten, and chromium.
Claim 4
Dependent Claim
22 words
The method of claim 2 , wherein the adhesion layer has a thickness of from about 25 nanometers to about 100 nanometers.
Claim 5
Dependent Claim
24 words
The method of claim 1 , wherein the base-metal layer is a metal selected from the group consisting of copper, nickel, and alloys thereof.
Claim 6
Dependent Claim
22 words
The method of claim 4 , wherein the base-metal layer has a thickness of from about 0.75 micrometers to about 5 micrometers.
Claim 7
Dependent Claim
22 words
The method of claim 1 , wherein the oxidation-prevention layer is a metal selected from the group consisting of gold and silver.
Claim 8
Dependent Claim
22 words
The method of claim 6 , wherein the oxidation-prevention layer has a thickness of from about 70 nanometers to about 600 nanometers.
Claim 9
Dependent Claim
22 words
The method of claim 6 , wherein the oxidation-prevention layer has a thickness of from about 10 nanometers to about 200 nanometers.
Claim 10
Dependent Claim
26 words
The method of claim 1 , wherein the thick-film metallization comprises a precious metal selected from the group consisting of gold, platinum, palladium, and combinations thereof.
Claim 11
Dependent Claim
58 words
A metallized ceramic substrate, comprising: a ceramic substrate having a thick-film metallization thereon; a thin-film metallization overlying the thick-film metallization, the thin-film metallization comprising: an adhesion layer overlying and in contact with the thick-film metallization, a base-metal layer overlying and in contact with the adhesion layer, and an oxidation-prevention layer overlying and in contact with the base-metal layer.
Claim 12
Dependent Claim
58 words
A metallized ceramic substrate, comprising: a ceramic substrate having a thick-film metallization thereon; a thin-film metallization overlying the thick-film metallization, the thin-film metallization comprising: an adhesion layer overlying and in contact with the thick-film metallization, a base-metal layer overlying and in contact with the adhesion layer, and an oxidation-prevention layer overlying and in contact with the base-metal layer.
Claim 13
Dependent Claim
25 words
The metallized ceramic substrate of claim 10 , wherein the adhesion layer is a metal selected from the group consisting of titanium, titanium-tungsten, and chromium.
Claim 14
Dependent Claim
24 words
The metallized ceramic substrate of claim 11 , wherein the adhesion layer has a thickness of from about 25 nanometers to about 100 nanometers.
Claim 15
Dependent Claim
26 words
The metallized ceramic substrate of claim 10 , wherein the base-metal layer is a metal selected from the group consisting of copper, nickel, and alloys thereof.
Claim 16
Dependent Claim
24 words
The metallized ceramic substrate of claim 13 , wherein the base-metal layer has a thickness of from about 0.15 micrometers to about 5 micrometers.
Claim 17
Dependent Claim
24 words
The metallized ceramic substrate of claim 10 , wherein the oxidation-prevention layer is a metal selected from the group consisting of gold and silver.
Claim 18
Dependent Claim
24 words
The metallized ceramic substrate of claim 15 , wherein the oxidation-prevention layer has a thickness of from about 70 nanometers to about 600 nanometers.
Claim 19
Dependent Claim
24 words
The metallized ceramic substrate of claim 15 , wherein the oxidation-prevention layer has a thickness of from about 100 nanometers to about 200 nanometers.
Claim 20
Dependent Claim
29 words
The metallized ceramic substrate of claim 10 , wherein the thick-film metallization comprises a precious metal selected from the group consisting of gold, silver, platinum, palladium, and combinations thereof.
Claim 21
Independent Claim
137 words
A method of forming a soldered electrical connection, comprising the steps of providing a ceramic substrate having a thick-film metallization thereon; depositing a thin-film metallization overlying the thick-film metallization, the thin-film metallization including: an adhesion layer overlying and in contact with the thick-film metallization, a base-metal layer overlying and in contact with the adhesion layer, and an oxidation-prevention layer overlying and in contact with the base-metal layer; providing an electrical conductor, wherein the electrical conductor is a bonding pad of a flip chip having a solder bump and soldering the electrical conductor to the thin-film metallization of the ceramic substrate, wherein the step of soldering includes the steps of placing the bonding pad having the solder bump thereon in contact with the thin-film metallization, and heating the solder bump to a temperature greater than its liquidus temperature.
Claim 22
Independent Claim
137 words
A method of forming a soldered electrical connection, comprising the steps of providing a ceramic substrate having a thick-film metallization thereon; depositing a thin-film metallization overlying the thick-film metallization, the thin-film metallization including: an adhesion layer overlying and in contact with the thick-film metallization, a base-metal layer overlying and in contact with the adhesion layer, and an oxidation-prevention layer overlying and in contact with the base-metal layer; providing an electrical conductor, wherein the electrical conductor is a bonding pad of a flip chip having a solder bump and soldering the electrical conductor to the thin-film metallization of the ceramic substrate, wherein the step of soldering includes the steps of placing the bonding pad having the solder bump thereon in contact with the thin-film metallization, and heating the solder bump to a temperature greater than its liquidus temperature.
Claim 23
Independent Claim
238 words
A method of forming a soldered electrical connection, comprising the steps of providing a ceramic substrate having a thick-film metallization thereon, wherein the thick-film metallization comprises a precious metal selected from the group consisting of gold, platinum, palladium, and combinations thereof; depositing a thin-film metallization overlying the thick-film metallization, the thin-film metallization comprising: an adhesion layer overlying and in contact with the thick-film metallization, wherein the adhesion layer is a metal selected from the group consisting of titanium, titanium-tungsten, and chromium, and wherein the adhesion layer has a thickness of from about 25 nanometers to about 100 nanometers, a base-metal layer overlying and in contact with the adhesion layer, wherein the base-metal layer is a metal selected from the group consisting of copper, nickel, and alloys thereof, and wherein the base-metal layer has a thickness of from about 0.15 micrometers to about 5 micrometers, and an oxidation-prevention layer overlying and in contact with the base-metal layer the oxidation-prevention layer is a metal selected from the group consisting of gold and silver, and wherein the oxidation-prevention layer has a thickness of from about 70 nanometers to about 600 nanometers; providing a flip chip having a bonding pad with a solder bump thereon; placing the bonding pad having the solder bump thereon in contact with the thin-film metallization, and heating the solder bump to a temperature greater than its liquidus temperature to solder the bonding pad to the thin-film metallization.
Claim 24
Independent Claim
238 words
A method of forming a soldered electrical connection, comprising the steps of providing a ceramic substrate having a thick-film metallization thereon, wherein the thick-film metallization comprises a precious metal selected from the group consisting of gold, platinum, palladium, and combinations thereof; depositing a thin-film metallization overlying the thick-film metallization, the thin-film metallization comprising: an adhesion layer overlying and in contact with the thick-film metallization, wherein the adhesion layer is a metal selected from the group consisting of titanium, titanium-tungsten, and chromium, and wherein the adhesion layer has a thickness of from about 25 nanometers to about 100 nanometers, a base-metal layer overlying and in contact with the adhesion layer, wherein the base-metal layer is a metal selected from the group consisting of copper, nickel, and alloys thereof, and wherein the base-metal layer has a thickness of from about 0.15 micrometers to about 5 micrometers, and an oxidation-prevention layer overlying and in contact with the base-metal layer the oxidation-prevention layer is a metal selected from the group consisting of gold and silver, and wherein the oxidation-prevention layer has a thickness of from about 70 nanometers to about 600 nanometers; providing a flip chip having a bonding pad with a solder bump thereon; placing the bonding pad having the solder bump thereon in contact with the thin-film metallization, and heating the solder bump to a temperature greater than its liquidus temperature to solder the bonding pad to the thin-film metallization.
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