US6737333B2
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Semiconductor device isolation structure and method of forming
Assignee: Texas Instruments Inc
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Filing: 2002-06-20
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Granted: 2004-05-18
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Expires: 2022-06-20
Abstract
Abstract A method for isolating semiconductor devices includes forming a first oxide layer outwardly from a semiconductor substrate, forming a first nitride layer outwardly from the first oxide layer, removing a portion of the first nitride layer, a portion of the first oxide layer, and a portion of the substrate to form a trench isolation region, forming a second oxide layer in the trench isolation region, forming a spin-on-glass region in the trench isolation region, annealing the spin-on-glass region, removing a portion of the spin-on-glass region to expose a shallow trench isolation region, and forming a third oxide layer in the shallow trench isolation region.
Inventors
- 👤 Zhihao Chen
- 👤 Douglas T. Grider
- 👤 Freidoon Mehrad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:09
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
106 words
A method for isolating semiconductor devices, the method comprising: forming a first oxide layer outwardly from a semiconductor substrate; forming a first nitride layer outwardly from the first oxide layer; removing a portion of the first nitride layer, a portion of the first oxide layer, and a portion of the substrate to form a trench isolation region; forming a second oxide layer in the trench isolation region; forming a spin-on-glass region in the trench isolation region; annealing the spin-on-glass region; removing a portion of the spin-on-glass region to expose a shallow trench isolation region; and forming a third oxide layer in the shallow trench isolation region.
Claim 2
Independent Claim
106 words
A method for isolating semiconductor devices, the method comprising: forming a first oxide layer outwardly from a semiconductor substrate; forming a first nitride layer outwardly from the first oxide layer; removing a portion of the first nitride layer, a portion of the first oxide layer, and a portion of the substrate to form a trench isolation region; forming a second oxide layer in the trench isolation region; forming a spin-on-glass region in the trench isolation region; annealing the spin-on-glass region; removing a portion of the spin-on-glass region to expose a shallow trench isolation region; and forming a third oxide layer in the shallow trench isolation region.
Claim 3
Dependent Claim
31 words
The method of claim 1 , wherein the trench isolation region has a depth between approximately 0.7 microns and 1.3 microns and a width between approximately 0.1 microns and 0.13 microns.
Claim 4
Dependent Claim
25 words
The method of claim 1 , wherein the trench isolation region has a depth of approximately one micron and a width of approximately 0.12 microns.
Claim 5
Dependent Claim
62 words
The method of claim 1 , wherein annealing the spin-on-glass region comprises annealing the spin-on-glass region at a temperature between approximately 300° C. and 400° C. for a time period between approximately 15 and 30 minutes, and then annealing the spin-on-glass region at a temperature between approximately 900° C. and 1000° C. for a time period between approximately 5 and 10 minutes.
Claim 6
Dependent Claim
54 words
The method of claim 1 , wherein annealing the spin-on-glass region comprises annealing the spin-on-glass region at a temperature of approximately 400° C. for a time period of approximately 30 minutes, and then annealing the spin-on-glass region at a temperature of approximately 1000° C. for a time period between approximately 5 and 10 minutes.
Claim 7
Dependent Claim
22 words
The method of claim 1 , wherein the shallow trench isolation region has a depth between approximately 2000 Å and 2700 Å.
Claim 8
Dependent Claim
19 words
The method of claim 1 , wherein the shallow trench isolation region has a depth of approximately 2000 Å.
Claim 9
Dependent Claim
30 words
The method of claim 1 , wherein forming the second oxide layer in the trench isolation region comprises forming the second oxide layer with a thickness of approximately 150 Å.
Claim 10
Independent Claim
194 words
A method for isolating semiconductor devices, the method comprising: forming a first oxide layer outwardly from a semiconductor substrate; forming a first nitride layer outwardly from the first oxide layer; removing a portion of the first nitride layer, a portion of the first oxide layer, and a portion of the substrate to form a trench isolation region having a depth between approximately 0.7 microns and 1.3 microns and a width between approximately 0.1 microns and 0.13 microns; forming a second oxide layer in the trench isolation region; forming a spin-on-glass region in the trench isolation region; annealing the spin-on-glass region at a temperature between approximately 300° C. and 400° C. for a time period between approximately 15 and 30 minutes, and then annealing the spin-on-glass region at a temperature between approximately 900° C. and 1000° C. for a time period between approximately 5 and 10 minutes; removing a portion of the spin-on-glass region to expose a shallow trench isolation region having a depth between approximately 2000 Å and 2700 Å; forming a third oxide layer in the shallow trench isolation region; and polishing the third oxide layer by utilizing a chemical mechanical polishing technique.
Claim 11
Independent Claim
194 words
A method for isolating semiconductor devices, the method comprising: forming a first oxide layer outwardly from a semiconductor substrate; forming a first nitride layer outwardly from the first oxide layer; removing a portion of the first nitride layer, a portion of the first oxide layer, and a portion of the substrate to form a trench isolation region having a depth between approximately 0.7 microns and 1.3 microns and a width between approximately 0.1 microns and 0.13 microns; forming a second oxide layer in the trench isolation region; forming a spin-on-glass region in the trench isolation region; annealing the spin-on-glass region at a temperature between approximately 300° C. and 400° C. for a time period between approximately 15 and 30 minutes, and then annealing the spin-on-glass region at a temperature between approximately 900° C. and 1000° C. for a time period between approximately 5 and 10 minutes; removing a portion of the spin-on-glass region to expose a shallow trench isolation region having a depth between approximately 2000 Å and 2700 Å; forming a third oxide layer in the shallow trench isolation region; and polishing the third oxide layer by utilizing a chemical mechanical polishing technique.
Claim 12
Dependent Claim
18 words
The method of claim 9 , wherein the trench isolation region has a depth of approximately one micron.
Claim 13
Dependent Claim
54 words
The method of claim 9 , wherein annealing the spin-on-glass region comprises annealing the spin-on-glass region at a temperature of approximately 400° C. for a time period of approximately 30 minutes, and then annealing the spin-on-glass region at a temperature of approximately 1000° C. for a time period between approximately 5 and 10 minutes.
Claim 14
Dependent Claim
19 words
The method of claim 9 , wherein the shallow trench isolation region has a depth of approximately 2000 Å.
References Cited (Backward Citations)
JPS62106645A
Cited
JPH03234041A
Cited
US6214735B1
Cited
US5801082A
Cited
US6020230A
Cited
US6479369B1
Cited
US6417073B2
Cited
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