US6734572B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pad structure for bonding pad and probe pad and manufacturing method thereof
Assignee: Nanya Technology Corp
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Filing: 2002-05-17
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Granted: 2004-05-11
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Expires: 2022-05-17
Abstract
Abstract A mark-shaped pad. A bonding pad structure with at least one mark-shaped bonding pad comprises: a bottom metal layer disposed over the surface of a rectangular semiconductor substrate to connect the circuit electrically, an inter-metal dielectric layer disposed over the bottom metal layer, metal plugs formed in the inter-metal dielectric layer to connect with the bottom metal layer, a top metal layer disposed over the inter-metal dielectric layer connecting with the metal plugs, and a passivation layer disposed over the top metal layer with openings to expose the top metal layer portions as bonding pads, wherein at least one bonding pad is mark-shaped, e.g. “”, “”, “” or “”, to indicate the orientation of the bonding pads on the rectangular semiconductor substrate.
Inventors
- 👤 Shu-Liang Nin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:10
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/27; H10P74/277; H10W; H10W46/00; H10W72/00; H10W72/01; H10W72/019; H10W46/101; H10W46/301; H10W46/501; H10W46/503; H10W46/601; H10W46/603; H10W72/90; H10W72/931; H10W72/932; H10W72/936; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
122 words
A bonding pad structure disposed on a surface of a semiconductor substrate with a circuit therein, comprising: a bottom metal layer disposed over the surface of the semiconductor substrate to connect the circuit electrically; an inter-metal dielectric layer disposed over the bottom metal layer; a plurality of metal plugs formed therein the inter-metal dielectric layer to connect with the bottom metal layer; a top metal layer disposed over the inter-metal dielectric layer connecting with the metal plugs; and a passivation layer disposed over the top metal layer with a plurality of openings to expose the top metal layer portions as bonding pads, wherein at least one bonding pad is mark-shaped to indicate the orientation of the bonding pads on the semiconductor substrate.
Claim 2
Dependent Claim
122 words
A bonding pad structure disposed on a surface of a semiconductor substrate with a circuit therein, comprising: a bottom metal layer disposed over the surface of the semiconductor substrate to connect the circuit electrically; an inter-metal dielectric layer disposed over the bottom metal layer; a plurality of metal plugs formed therein the inter-metal dielectric layer to connect with the bottom metal layer; a top metal layer disposed over the inter-metal dielectric layer connecting with the metal plugs; and a passivation layer disposed over the top metal layer with a plurality of openings to expose the top metal layer portions as bonding pads, wherein at least one bonding pad is mark-shaped to indicate the orientation of the bonding pads on the semiconductor substrate.
Claim 3
Dependent Claim
19 words
The bonding pad structure as claimed in claim 1 , wherein the mark-shaped bonding pad is a “” shape.
Claim 4
Dependent Claim
19 words
The bonding pad structure as claimed in claim 1 , wherein the mark-shaped bonding pad is a “” shape.
Claim 5
Dependent Claim
20 words
The bonding pad structure as claimed in claim 1 , wherein the mark-shaped bonding pad is a cross shape “”.
Claim 6
Dependent Claim
19 words
The bonding pad structure as claimed in claim 1 , wherein the mark-shaped bonding pad is a “” shape.
Claim 7
Dependent Claim
32 words
The bonding pad structure as claimed in claim 1 , wherein the top and bottom metal layers are an alloy of aluminum and copper or an alloy of aluminum, copper and silica.
Claim 8
Dependent Claim
18 words
The bonding pad structure as claimed in claim 1 , wherein the inter-metal dielectric layer is silicon oxide.
Claim 9
Dependent Claim
23 words
The bonding pad structure as claimed in claim 1 , wherein the passivation layer is silicon oxide or borophosphosilicate glass and silicon nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-05-11 | 2007-11-10 | 2008-05-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-05-11 | 2011-11-10 | 2012-05-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-05-11 | 2015-11-10 | 2016-05-11 | $7700.00 | Window Closed / Lapsed |