Method of manufacturing a semiconductor device with recesses using anodic oxide

Claim 1

A method for manufacturing a semiconductor device which includes a semiconductor substrate having a semiconductor circuit on a principal plane thereof, with through holes extending through said semiconductor substrate from said principal plane toward a rear surface thereof, and penetration electrodes formed in said through holes with their one ends protruded from the rear surface of said semiconductor substrate, said method comprising: a recess forming step of forming recesses in a substrate proper that has said semiconductor circuit formed on one surface thereof; an insulation film forming step of forming an insulation film on an inner wall surface of each of said recesses; an embedded electrode forming step of filling a conductive material into said recesses through said insulation films to form embedded electrodes that constitute said penetration electrodes; a penetration electrode forming step of forming said penetration electrodes by removing a rear side of said substrate proper opposite to said one surface thereof until one end face of each of said embedded electrodes is exposed; an anodic oxide film forming step of anodizing the rear surface of said substrate proper to form an anodic oxide film; and a semiconductor substrate forming step of forming said semiconductor substrate by removing said anodic oxide film by means of etching.

Claim 2

A method for manufacturing a semiconductor device which includes a semiconductor substrate having a semiconductor circuit on a principal plane thereof, with through holes extending through said semiconductor substrate from said principal plane toward a rear surface thereof, and penetration electrodes formed in said through holes with their one ends protruded from the rear surface of said semiconductor substrate, said method comprising: a recess forming step of forming recesses in a substrate proper that has said semiconductor circuit formed on one surface thereof; an insulation film forming step of forming an insulation film on an inner wall surface of each of said recesses; an embedded electrode forming step of filling a conductive material into said recesses through said insulation films to form embedded electrodes that constitute said penetration electrodes; a penetration electrode forming step of forming said penetration electrodes by removing a rear side of said substrate proper opposite to said one surface thereof until one end face of each of said embedded electrodes is exposed; an anodic oxide film forming step of anodizing the rear surface of said substrate proper to form an anodic oxide film; and a semiconductor substrate forming step of forming said semiconductor substrate by removing said anodic oxide film by means of etching.

Claim 3

A method for manufacturing a semiconductor device which includes a semiconductor substrate having a semiconductor circuit on a principal plane thereof, with through holes extending through said semiconductor substrate from said principal plane toward a rear surface thereof, and penetration electrodes formed in said through holes with their one ends protruded from the rear surface of said semiconductor substrate, said method comprising: a recess forming step of forming recesses in a substrate proper that has said semiconductor circuit formed on one surface thereof; an insulation film forming step of forming an insulation film on an inner wall surface of each of said recesses; an embedded electrode forming step of filling a conductive material into said recesses through said insulation films to form embedded electrodes that constitute said penetration electrodes; a removal step of removing a rear side of said substrate proper opposite to said one surface thereof until one end face of each of said embedded electrodes is exposed; an anodic oxide film forming step of anodizing the rear surface of said substrate proper to form an anodic oxide film; a semiconductor substrate forming step of removing said anodic oxide film by means of etching to form said penetration electrodes and a thinned semiconductor substrate; and a removal step of removing said insulation films which cover one end portions of said penetration electrodes.

Claim 4

A method for manufacturing a semiconductor device which includes a semiconductor substrate having a semiconductor circuit on a principal plane thereof, with through holes extending through said semiconductor substrate from said principal plane toward a rear surface thereof, and penetration electrodes formed in said through holes with their one ends protruded from the rear surface of said semiconductor substrate, said method comprising: a recess forming step of forming recesses in a substrate proper that has said semiconductor circuit formed on one surface thereof; an insulation film forming step of forming an insulation film on an inner wall surface of each of said recesses; an embedded electrode forming step of filling a conductive material into said recesses through said insulation films to form embedded electrodes that constitute said penetration electrodes; a removal step of removing a rear side of said substrate proper opposite to said one surface thereof until one end face of each of said embedded electrodes is exposed; an anodic oxide film forming step of anodizing the rear surface of said substrate proper to form an anodic oxide film; a semiconductor substrate forming step of removing said anodic oxide film by means of etching to form said penetration electrodes and a thinned semiconductor substrate; and a removal step of removing said insulation films which cover one end portions of said penetration electrodes.