Method for forming multiple structures in a semiconductor device

Claim 1

A method of forming a plurality of fins in a FinFET device, comprising: depositing a dielectric layer over a silicon on insulator (SOI) wafer, the SOI wafer comprising a conductive layer on an insulating layer; forming a resist mask over portions of the dielectric layer; etching a trench in a portion of the dielectric layer not covered by the resist mask, the trench having two side walls; forming spacers adjacent the two sidewalls of the trench, the spacers comprising a conductive material and having a width ranging from about 100 Å to about 500 Å; etching the dielectric layer to form dielectric structures located below the spacers, the dielectric structures having a width approximately equal to the width of the spacers; etching the conductive layer to form the plurality of fins; and removing the spacers and the dielectric structures.

Claim 2

A method of forming a plurality of fins in a FinFET device, comprising: depositing a dielectric layer over a silicon on insulator (SOI) wafer, the SOI wafer comprising a conductive layer on an insulating layer; forming a resist mask over portions of the dielectric layer; etching a trench in a portion of the dielectric layer not covered by the resist mask, the trench having two side walls; forming spacers adjacent the two sidewalls of the trench, the spacers comprising a conductive material and having a width ranging from about 100 Å to about 500 Å; etching the dielectric layer to form dielectric structures located below the spacers, the dielectric structures having a width approximately equal to the width of the spacers; etching the conductive layer to form the plurality of fins; and removing the spacers and the dielectric structures.

Claim 10

A method of manufacturing a semiconductor device, comprising: depositing a film over a conductive layer, the conductive layer being used to form a plurality of fin structures; etching at least one trench in a portion of the film, a first one of the at least one trench having two side walls; forming spacers adjacent the two sidewalls of the first trench, the spacers having a first width and comprising a conductive material; etching the film, the etching terminating on the conductive layer with the spacers acting as a mask to prevent etching of portions of the film located below the spacers, the un-etched portions of the film forming a first plurality of structures approximately equal in width to the first width; etching the conductive layer, the first plurality of structures acting as a mask to prevent portions of the conductive layer from being etched, the un-etched portions of the conductive layer forming the fin structures; forming a source region and a drain region; depositing a gate material over the fin structures; and patterning and etching the gate material to form at least one gate electrode.

Claim 11

A method of manufacturing a semiconductor device, comprising: depositing a film over a conductive layer, the conductive layer being used to form a plurality of fin structures; etching at least one trench in a portion of the film, a first one of the at least one trench having two side walls; forming spacers adjacent the two sidewalls of the first trench, the spacers having a first width and comprising a conductive material; etching the film, the etching terminating on the conductive layer with the spacers acting as a mask to prevent etching of portions of the film located below the spacers, the un-etched portions of the film forming a first plurality of structures approximately equal in width to the first width; etching the conductive layer, the first plurality of structures acting as a mask to prevent portions of the conductive layer from being etched, the un-etched portions of the conductive layer forming the fin structures; forming a source region and a drain region; depositing a gate material over the fin structures; and patterning and etching the gate material to form at least one gate electrode.

Claim 17

A method of forming a plurality of structures in a semiconductor device, comprising: depositing a film over a conductive layer; etching at least one trench in a portion of the film; forming conductive spacers along sidewalls of the at least one trench; etching the film, the etching terminating on the conductive layer; and etching the conductive layer to form the plurality of structures wherein the semiconductor device comprises a finFET device and the plurality of structures comprise fins.

Claim 18

A method of forming a plurality of structures in a semiconductor device, comprising: depositing a film over a conductive layer; etching at least one trench in a portion of the film; forming conductive spacers along sidewalls of the at least one trench; etching the film, the etching terminating on the conductive layer; and etching the conductive layer to form the plurality of structures wherein the semiconductor device comprises a finFET device and the plurality of structures comprise fins.