Patent US6690044B1 successfully refreshed from Google Patents.
US6690044B1
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Approach to avoid buckling BPSG by using an intermediate barrier layer
Assignee: Micron Technology Inc
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Filing: 1997-05-20
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Granted: 2004-02-10
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Expires: 2017-05-20
Abstract
Abstract A multilayer heterostructure is provided a planarization layer superjacent a semiconductor substrate. The planarization layer comprises tungsten, titanium, tantalum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass (“BPSG”) or tetraethylorthosilicate (“TEOS”). A barrier film having a structural integrity is superjacent the planarization layer. A second layer is formed superjacent the barrier film. The second layer comprises tungsten, titanium, tantalum, copper, aluminum, borophosphosilicate glass (“BPSG”) or tetraethylorthosilicate (“TEOS”). Heating causes the planarization layer to expand according to a first thermal coefficient of expansion, the second layer to expand according to a second thermal coefficient of expansion, and the structural integrity of the barrier film to be maintained. This results in the barrier film isolating the planarization layer from the second layer, thereby preventing the planarization layer and the second layer from interacting during the heating step. Further, the planarization layer goes through a solid state reaction and the second layer obtains a uniform reflow.
Inventors
- 👤 Trung T. Doan
- 👤 Randhir P. S. Thakur
- 👤 Yauh-Ching Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:20
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06
Claims Analysis
Total Claims: 48
Claim 1
Independent Claim
119 words
A semiconductor device comprising: a semiconductor substrate; a first planarization layer supported by said semiconductor substrate; a second planarization layer supported by said semiconductor substrate; and a barrier film disposed between said first planarization layer and said second planarization layer, said barrier film isolating said first planarization layer from said second planariztion layer, wherein said first planarization layer has a first coefficient of thermal expansion, said second planarization layer has a second coefficient of thermal expansion, and said barrier film has a third coefficient of thermal expansion, said first, second and third coefficients of thermal expansion being different from one another, and said third coefficient of thermal expansion being smaller than said first and second coefficients of thermal expansion.
Claim 2
Dependent Claim
119 words
A semiconductor device comprising: a semiconductor substrate; a first planarization layer supported by said semiconductor substrate; a second planarization layer supported by said semiconductor substrate; and a barrier film disposed between said first planarization layer and said second planarization layer, said barrier film isolating said first planarization layer from said second planariztion layer, wherein said first planarization layer has a first coefficient of thermal expansion, said second planarization layer has a second coefficient of thermal expansion, and said barrier film has a third coefficient of thermal expansion, said first, second and third coefficients of thermal expansion being different from one another, and said third coefficient of thermal expansion being smaller than said first and second coefficients of thermal expansion.
Claim 3
Dependent Claim
35 words
The device, as set forth in claim 1 , wherein said first planarization layer is formed of one of tungsten, titanium, tantulum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass, and tetraethylorthosilicate.
Claim 4
Dependent Claim
35 words
The device, as set forth in claim 1 , wherein said second planarization layer is formed of one of tungsten, titanium, tantulum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass, and tetraethylorthosilicate.
Claim 5
Dependent Claim
32 words
The device, as set forth in claim 1 , wherein said barrier film is formed of one of titanium nitride, tantulum nitride, titanium oxide, tantulum oxide, silicon dioxide, silicon nitride, and tetraethylorthosilicate.
Claim 6
Dependent Claim
41 words
The device, as set forth in claim 1 , wherein said first planarization layer is disposed on said semiconductor substrate, said barrier film is disposed on said first planarization layer, and said second planarization layer is disposed on said barrier film.
Claim 7
Dependent Claim
41 words
The device, as set forth in claim 1 , wherein said second planarization layer is disposed on said semiconductor substrate, said barrier film is disposed on said second planarization layer, and said first planarization layer is disposed on said barrier film.
Claim 8
Dependent Claim
22 words
The device, as set forth in claim 1 , wherein said first planarization layer differs in composition from said second planarization layer.
Claim 9
Dependent Claim
39 words
The device, as set forth in claim 1 , wherein said barrier film retains its structural integrity when subjected to heat sufficient to cause at least one of said first planarization layer and said second planarization layer to reflow.
Claim 10
Dependent Claim
18 words
The device, as set forth in claim 1 , wherein said first planarization layer comprises a dielectric material.
Claim 11
Dependent Claim
18 words
The device, as set forth in claim 1 , wherein said second planarization layer comprises a conductive material.
Claim 12
Dependent Claim
16 words
The device, as set forth in claim 1 , wherein said barrier film comprises a nitride.
Claim 13
Dependent Claim
89 words
A semiconductor device comprising: a semiconductor substrate; a first layer of material disposed on said semiconductor substrate, said first layer having a first coefficient of thermal expansion; a second layer of material disposed on said first layer of material, said second layer having a second coefficient of thermal expansion; a third layer of material disposed on said second layer of material, said third layer having a third coefficient of thermal expansion, said second coefficient of thermal expansion being substantially smaller than said first and third coefficients of thermal expansion.
Claim 14
Dependent Claim
89 words
A semiconductor device comprising: a semiconductor substrate; a first layer of material disposed on said semiconductor substrate, said first layer having a first coefficient of thermal expansion; a second layer of material disposed on said first layer of material, said second layer having a second coefficient of thermal expansion; a third layer of material disposed on said second layer of material, said third layer having a third coefficient of thermal expansion, said second coefficient of thermal expansion being substantially smaller than said first and third coefficients of thermal expansion.
Claim 15
Dependent Claim
34 words
The device, as set forth in claim 12 , wherein said first layer is formed of one of tungsten, titanium, tantulum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass, and tetraethylorthosilicate.
Claim 16
Dependent Claim
34 words
The device, as set forth in claim 12 , wherein said third layer is formed of one of tungsten, titanium, tantulum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass, and tetraethylorthosilicate.
Claim 17
Dependent Claim
32 words
The device, as set forth in claim 12 , wherein said second layer is formed of one of titanium nitride, tantulum nitride, titanium oxide, tantulum oxide, silicon dioxide, silicon nitride, and tetraethylorthosilicate.
Claim 18
Dependent Claim
20 words
The device, as set forth in claim 12 , wherein said first layer differs in composition from said third layer.
Claim 19
Dependent Claim
24 words
The device, as set forth in claim 12 , wherein said first coefficient of thermal expansion differs from said third coefficient of thermal expansion.
Claim 20
Dependent Claim
37 words
The device, as set forth in claim 12 , wherein said second layer retains its structural integrity when subjected to heat sufficient to cause at least one of said first layer and said third layer to reflow.
Claim 21
Dependent Claim
17 words
The device, as set forth in claim 12 , wherein said first layer comprises a dielectric material.
Claim 22
Dependent Claim
17 words
The device, as set forth in claim 12 , wherein said third layer comprises a conductive material.
Claim 23
Dependent Claim
16 words
The device, as set forth in claim 12 , wherein said second layer comprises a nitride.
Claim 24
Dependent Claim
85 words
A semiconductor device comprising: a semiconductor substrate; a first planarization layer supported by said semiconductor substrate, said first planarization layer having a first reflow temperature; a second planarization layer supported by said semiconductor substrate, said second planarization layer having a second reflow temperature; a barrier film disposed between said first planarization layer and said second planarization layer, said barrier film isolating said first planarization layer from said second planariztion layer at a temperature greater than at least one of said first and second reflow temperatures.
Claim 25
Dependent Claim
85 words
A semiconductor device comprising: a semiconductor substrate; a first planarization layer supported by said semiconductor substrate, said first planarization layer having a first reflow temperature; a second planarization layer supported by said semiconductor substrate, said second planarization layer having a second reflow temperature; a barrier film disposed between said first planarization layer and said second planarization layer, said barrier film isolating said first planarization layer from said second planariztion layer at a temperature greater than at least one of said first and second reflow temperatures.
Claim 26
Independent Claim
35 words
The device, as set forth in 22 , claim wherein said first planarization layer is formed of one of tungsten, titanium, tantulum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass, and tetraethylorthosilicate.
Claim 27
Dependent Claim
35 words
The device, as set forth in claim 22 , wherein said second planarization layer is formed of one of tungsten, titanium, tantulum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass, and tetraethylorthosilicate.
Claim 28
Dependent Claim
32 words
The device, as set forth in claim 22 , wherein said barrier film is formed of one of titanium nitride, tantulum nitride, titanium oxide, tantulum oxide, silicon dioxide, silicon nitride, and tetraethylorthosilicate.
Claim 29
Dependent Claim
41 words
The device, as set forth in claim 22 , wherein said first planarization layer is disposed on said semiconductor substrate, said barrier film is disposed on said first planarization layer, and said second planarization layer is disposed on said barrier film.
Claim 30
Dependent Claim
41 words
The device, as set forth in claim 22 , wherein said second planarization layer is disposed on said semiconductor substrate, said barrier film is disposed on said second planarization layer, and said first planarization layer is disposed on said barrier film.
Claim 31
Dependent Claim
22 words
The device, as set forth in claim 22 , wherein said first planarization layer differs in composition from said second planarization layer.
Claim 32
Dependent Claim
75 words
The device, as set forth in claim 22 , wherein said first planarization layer has a first coefficient of thermal expansion, said second planarization layer has a second coefficient of thermal expansion, and said barrier film has a third coefficient of thermal expansion, said first, second and third coefficients of thermal expansion being different from one another, and said third coefficient of thermal expansion being smaller than said first and second coefficients of thermal expansion.
Claim 33
Dependent Claim
18 words
The device, as set forth in claim 22 , wherein said first planarization layer comprises a dielectric material.
Claim 34
Dependent Claim
18 words
The device, as set forth in claim 22 , wherein said second planarization layer comprises a conductive material.
Claim 35
Dependent Claim
16 words
The device, as set forth in claim 22 , wherein said barrier film comprises a nitride.
Claim 36
Dependent Claim
146 words
A semiconductor device comprising: a semiconductor substrate; a first barrier film disposed on said semiconductor substrate; a first material layer disposed on said first barrier film; a second barrier film disposed on said first material layer; a second material layer disposed on said second barrier film; a feature formed through said first barrier film, said first material layer, said second barrier film, and said second material layer; and a third barrier film disposed on said second material layer and disposed in said feature, wherein said first material layer has a first coefficient of thermal expansion and said second material layer has a second coefficient of thermal expansion, said first and second coefficients of thermal expansion being different from one another, and wherein said first, second, and third barrier films have respective coefficients of thermal expansion being smaller than said first and second coefficients of thermal expansion.
Claim 37
Dependent Claim
146 words
A semiconductor device comprising: a semiconductor substrate; a first barrier film disposed on said semiconductor substrate; a first material layer disposed on said first barrier film; a second barrier film disposed on said first material layer; a second material layer disposed on said second barrier film; a feature formed through said first barrier film, said first material layer, said second barrier film, and said second material layer; and a third barrier film disposed on said second material layer and disposed in said feature, wherein said first material layer has a first coefficient of thermal expansion and said second material layer has a second coefficient of thermal expansion, said first and second coefficients of thermal expansion being different from one another, and wherein said first, second, and third barrier films have respective coefficients of thermal expansion being smaller than said first and second coefficients of thermal expansion.
Claim 38
Dependent Claim
35 words
The device, as set forth in claim 33 , wherein said first material layer is formed of one of tungsten, titanium, tantulum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass, and tetraethylorthosilicate.
Claim 39
Dependent Claim
35 words
The device, as set forth in claim 33 , wherein said second material layer is formed of one of tungsten, titanium, tantulum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass, and tetraethylorthosilicate.
Claim 40
Dependent Claim
33 words
The device, as set forth in claim 33 , wherein said first barrier film is formed of one of titanium nitride, tantulum nitride, titanium oxide, tantulum oxide, silicon dioxide, silicon nitride, and tetraethylorthosilicate.
Claim 41
Dependent Claim
33 words
The device, as set forth in claim 33 , wherein said second barrier film is formed of one of titanium nitride, tantulum nitride, titanium oxide, tantulum oxide, silicon dioxide, silicon nitride, and tetraethylorthosilicate.
Claim 42
Dependent Claim
33 words
The device, as set forth in claim 33 , wherein said third barrier film is formed of one of titanium nitride, tantulum nitride, titanium oxide, tantulum oxide, silicon dioxide, silicon nitride, and tetraethylorthosilicate.
Claim 43
Dependent Claim
22 words
The device, as set forth in claim 33 , wherein said first material layer differs in composition from said second material layer.
Claim 44
Dependent Claim
43 words
The device, as set forth in claim 33 , wherein said first, second, and third barrier films retain their structural integrity when subjected to heat sufficient to cause at least one of said first material layer and said second material layer to reflow.
Claim 45
Dependent Claim
21 words
The device, as set forth in claim 33 , further comprising a third material layer disposed on said third barrier layer.
Claim 46
Dependent Claim
18 words
The device, as set forth in claim 41 , wherein said third material layer comprises a conductive material.
Claim 47
Dependent Claim
16 words
The device, as set forth in claim 33 , wherein said feature comprises a contact hole.
Claim 48
Dependent Claim
19 words
The device, as set forth in claim 43 , further comprising a conductive plug disposed in said contact hole.
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