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US6671210B2
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Three-transistor pipelined dynamic random access memory
Assignee: Hitachi Ltd
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Filing: 2002-10-09
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Granted: 2003-12-30
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Expires: 2022-10-09
Abstract
Abstract A semiconductor device includes a plurality of DRAM memory cells each having first, second, and third MOS transistors; a plurality of first word lines coupled to the gates of the first MOS transistors; a plurality of second word lines coupled to the gates of the second MOS transistors; a plurality of first bit lines coupled to the source/drain paths of the first MOS transistors; and a plurality of second bit lines coupled to the source/drain paths of the second MOS transistors. The plurality of DRAM memory cells includes a series of such memory cells defining a plurality of groups of k memory cells, and the plurality of first word lines includes a group of k first word lines, each of which is coupled to a gate of a first MOS transistor only in every k th DRAM memory cell of the series, wherein k is greater than one.
Inventors
- 👤 Takao Watanabe
- 👤 Hiroyuki Mizuno
- 👤 Satoru Akiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:04
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/22; G11C7/222; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/406; G11C11/4063; G11C11/407; G11C11/4076; G11C7/10; G11C7/1072
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
183 words
A semiconductor device comprising: a plurality of DRAM memory cells each having first, second, and third MOS transistors; a plurality of first word lines coupled to gates of said first MOS transistors; a plurality of second word lines coupled to gates of said second MOS transistors; a plurality of first bit lines coupled to source/drain paths of said first MOS transistors; a plurality of second bit lines coupled to source/drain paths of said second MOS transistors, wherein the plurality of DRAM memory cells includes a series of such memory cells defining a plurality of groups of k memory cells in sequence, and the plurality of first word lines includes a group of k first word lines, each of which is coupled to a gate of only one first MOS transistor in each group of k memory cells, wherein k is greater than one, and wherein the number of data inputted for writing data when one of said plurality of first word lines is selected is the number of said DRAM memory cells provided to said one of said plurality of first word lines.
Claim 2
Dependent Claim
183 words
A semiconductor device comprising: a plurality of DRAM memory cells each having first, second, and third MOS transistors; a plurality of first word lines coupled to gates of said first MOS transistors; a plurality of second word lines coupled to gates of said second MOS transistors; a plurality of first bit lines coupled to source/drain paths of said first MOS transistors; a plurality of second bit lines coupled to source/drain paths of said second MOS transistors, wherein the plurality of DRAM memory cells includes a series of such memory cells defining a plurality of groups of k memory cells in sequence, and the plurality of first word lines includes a group of k first word lines, each of which is coupled to a gate of only one first MOS transistor in each group of k memory cells, wherein k is greater than one, and wherein the number of data inputted for writing data when one of said plurality of first word lines is selected is the number of said DRAM memory cells provided to said one of said plurality of first word lines.
Claim 3
Dependent Claim
47 words
The semiconductor device according to claim 1 ; wherein each gate of said third MOS transistor is coupled to the source/drain path of said first MOS transistor, and each source/drain path of said third MOS transistor is coupled to the source/drain path of said second MOS transistor.
Claim 4
Dependent Claim
30 words
The semiconductor device according to claim 1 , wherein the number of said plurality of first word lines is larger than the number of said plurality of second word lines.
Claim 5
Dependent Claim
45 words
The semiconductor device according to claim 1 , wherein one of said plurality of first word lines is selected for write operation and one of said plurality of second word lines is selected for read operation, and wherein read operation and write operation are pipelined.
Claim 6
Dependent Claim
24 words
The semiconductor device according to claim 1 , wherein said plurality of DRAM memory cells are not destructed during read operation and write operation.
Claim 7
Dependent Claim
168 words
A semiconductor device comprising: a plurality of DRAM memory cells each having first, second, and third MOS transistors; a plurality of first word lines coupled to gates of said first MOS transistors; a plurality of second word lines coupled to gates of said second MOS transistors; a plurality of first bit lines coupled to source/drain paths of said first MOS transistors; a plurality of second bit lines coupled to source/drain paths of said second MOS transistors, wherein the number of said plurality of first word lines is larger than the number of said plurality of second word lines, and wherein the plurality of DRAM memory cells includes a series of such memory cells defining a plurality of groups of memory cells in sequence, and the plurality of first word lines includes a group of k first word lines, each of which is coupled to a gate of a first MOS transistor only in every k th DRAM memory cell of the series, wherein k is greater than one.
Claim 8
Dependent Claim
168 words
A semiconductor device comprising: a plurality of DRAM memory cells each having first, second, and third MOS transistors; a plurality of first word lines coupled to gates of said first MOS transistors; a plurality of second word lines coupled to gates of said second MOS transistors; a plurality of first bit lines coupled to source/drain paths of said first MOS transistors; a plurality of second bit lines coupled to source/drain paths of said second MOS transistors, wherein the number of said plurality of first word lines is larger than the number of said plurality of second word lines, and wherein the plurality of DRAM memory cells includes a series of such memory cells defining a plurality of groups of memory cells in sequence, and the plurality of first word lines includes a group of k first word lines, each of which is coupled to a gate of a first MOS transistor only in every k th DRAM memory cell of the series, wherein k is greater than one.
Claim 9
Dependent Claim
47 words
The semiconductor device according to claim 6 , wherein each gate of said third MOS transistor is coupled to the source/drain path of said first MOS transistor, and each source/drain path of said third MOS transistor is coupled to the source/drain path of said second MOS transistor.
Claim 10
Dependent Claim
57 words
The semiconductor device according to claim 6 , further comprising: an X address latch and a Y address latch, and wherein one of said plurality of first word lines is selected for write operation and one of said plurality of second word lines is selected for read operation, and wherein read operation and write operation are pipelined.
Claim 11
Dependent Claim
24 words
The semiconductor device according to claim 6 , wherein said plurality of DRAM memory cells are not destructed during read operation and write operation.
Claim 12
Dependent Claim
45 words
The semiconductor device according to claim 6 , wherein the number of data inputted for writing data into one of said plurality of first word lines is the number of said DRAM memory cells provided to said one of said plurality of first word lines.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-12-29 | 2007-06-30 | 2007-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-12-29 | 2011-06-30 | 2011-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-12-29 | 2015-06-30 | 2015-12-30 | $7700.00 | Window Closed / Lapsed |