US6656826B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with fuse to be blown with energy beam and method of manufacturing the semiconductor device
Assignee: Kioxia Corp
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Filing: 2001-09-27
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Granted: 2003-12-02
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Expires: 2021-09-27
Abstract
Abstract A semiconductor device has a fuse to be blown with an energy beam. The semiconductor device has copper wiring levels formed on a semiconductor substrate on which semiconductor elements are formed, an uppermost wiring level formed on said copper wiring levels and including a refractory metal film connected to a top one of the copper wiring levels, the fuse formed from a part of the uppermost wiring level, and a surface protective film formed on the uppermost wiring level.
Inventors
- 👤 Kazunari Ishimaru
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:15
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10D; H10D84/00; H10D84/01; H10W20/49; H10W20/493; H10W20/494; H10W72/00; H10W72/20; H10W72/221; H10W72/241; H10W72/242; H10W72/244; H10W72/251; H10W72/29; H10W72/90; H10W72/921; H10W72/923; H10W72/931; H10W72/932; H10W72/941; H10W72/9415; H10W72/942; H10W72/944; H10W72/9445; H10W72/951; H10W72/952; H10W72/981; H10W72/983; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49107
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
90 words
A semiconductor device comprising: copper wiring layers formed above a semiconductor substrate on which semiconductor elements are formed; a first insulating film formed on a top one of said copper wiring layers; a second insulating film formed on said first insulating film; an uppermost wiring layer formed on said second insulating film, and including a refractory metal film connected to the top one of said copper wiring layers; a fuse formed from a part of said uppermost wiring layer; and a surface protective film formed on said uppermost wiring layer.
Claim 2
Dependent Claim
90 words
A semiconductor device comprising: copper wiring layers formed above a semiconductor substrate on which semiconductor elements are formed; a first insulating film formed on a top one of said copper wiring layers; a second insulating film formed on said first insulating film; an uppermost wiring layer formed on said second insulating film, and including a refractory metal film connected to the top one of said copper wiring layers; a fuse formed from a part of said uppermost wiring layer; and a surface protective film formed on said uppermost wiring layer.
Claim 3
Dependent Claim
37 words
The semiconductor device of claim 1 , further comprising: a bump base metal film formed on said surface protective film and connected to said uppermost wiring layer; and a bump formed on said bump base metal film.
Claim 4
Dependent Claim
22 words
The semiconductor device of claim 2 , wherein said bump base metal film and said bump are formed above said semiconductor elements.
Claim 5
Dependent Claim
26 words
The semiconductor device of claim 1 , further comprising a capacitor formed with said uppermost wiring layer and the top one of said copper wiring layers.
Claim 6
Dependent Claim
23 words
The semiconductor device of claim 1 , wherein said uppermost wiring layer includes an Al-based metal film formed on said refractory metal film.
Claim 7
Dependent Claim
23 words
The semiconductor device of claim 1 , wherein said surface protective film has a thickness that causes no hindrance in blowing said fuse.
Claim 8
Dependent Claim
21 words
The semiconductor device of claim 1 , wherein at least part of said copper wiring layers has a dual damascene structure.
Claim 9
Dependent Claim
13 words
The semiconductor device of claim 1 , comprising a static random access memory.
Claim 10
Dependent Claim
19 words
The semiconductor device of claim 1 , wherein said fuse is capable of being blown with an energy beam.
Claim 11
Dependent Claim
34 words
The semiconductor device of claim 1 , wherein said surface protective film includes a first protective film formed on said uppermost wiring layer and a second protective film formed on said first protective film.
Claim 12
Independent Claim
98 words
A method of manufacturing a semiconductor device, comprising: forming copper wiring layers on interlayer insulating films, respectively, above a semiconductor substrate on which semiconductor elements are formed; forming a first insulating film on a top one of said copper wiring layers; forming a second insulating film on said first insulating film; forming, on said second insulating film, an uppermost wiring layer including a refractory metal film connected to the top one of said copper wiring layers; forming a fuse from a part of said uppermost wiring layer; and forming a surface protective film on said uppermost wiring layer.
Claim 13
Independent Claim
98 words
A method of manufacturing a semiconductor device, comprising: forming copper wiring layers on interlayer insulating films, respectively, above a semiconductor substrate on which semiconductor elements are formed; forming a first insulating film on a top one of said copper wiring layers; forming a second insulating film on said first insulating film; forming, on said second insulating film, an uppermost wiring layer including a refractory metal film connected to the top one of said copper wiring layers; forming a fuse from a part of said uppermost wiring layer; and forming a surface protective film on said uppermost wiring layer.
Claim 14
Dependent Claim
41 words
The method of claim 11 , further comprising: forming a bump base metal film on said surface protective film, said bump base metal film being connected to said uppermost wiring layer; and forming a bump on said bump base metal film.
Claim 15
Dependent Claim
21 words
The method of claim 12 , wherein said bump base metal film and said bump are formed above said semiconductor elements.
Claim 16
Dependent Claim
43 words
The method of claim 11 , further comprising: forming a first electrode of a capacitor from a part of the top one of said copper wiring layers; and forming a second electrode of said capacitor from a part of said uppermost wiring layer.
Claim 17
Dependent Claim
31 words
The method of claim 11 , further comprising forming an Al-based metal film on said refractory metal film, said Al-based metal film and refractory metal film constituting said uppermost wiring layer.
Claim 18
Dependent Claim
22 words
The method of claim 11 , wherein said surface protective film is formed to a thickness of 50 nm to 1000 nm.
Claim 19
Dependent Claim
21 words
The method of claim 11 , wherein at least part of said copper wiring layers are formed by a damascene method.
Claim 20
Dependent Claim
18 words
The method of claim 11 , wherein said fuse is capable of being blown with an energy beam.
Claim 21
Dependent Claim
40 words
The method of claim 11 , wherein said forming a surface protective film on said uppermost wiring layer comprises: forming a first protective film on said uppermost wiring layer; and forming a second protective film on said first protective film.
Claim 22
Dependent Claim
127 words
A semiconductor device comprising: copper wiring layers formed above a semiconductor substrate on which semiconductor elements are formed; a first insulating film formed on a top one of said copper wiring layers; a second insulating film formed on said first insulating film; an uppermost wiring layer formed on said second insulating film, and including a refractory metal film connected to the top one of said copper wiring layers and an Al-based metal film formed on said refractory metal film; a fuse formed from a part of said uppermost wiring layer; a surface protective film including a first protective film formed on said uppermost wiring layer and a second protective film formed on said first protective film; and an organic resin film formed on said surface protective film.
Claim 23
Dependent Claim
127 words
A semiconductor device comprising: copper wiring layers formed above a semiconductor substrate on which semiconductor elements are formed; a first insulating film formed on a top one of said copper wiring layers; a second insulating film formed on said first insulating film; an uppermost wiring layer formed on said second insulating film, and including a refractory metal film connected to the top one of said copper wiring layers and an Al-based metal film formed on said refractory metal film; a fuse formed from a part of said uppermost wiring layer; a surface protective film including a first protective film formed on said uppermost wiring layer and a second protective film formed on said first protective film; and an organic resin film formed on said surface protective film.
Claim 24
Dependent Claim
37 words
The semiconductor device of claim 20 , further comprising: a bump base metal film formed on said organic resin film and connected to said uppermost wiring layer; and a bump formed on said bump base metal film.
Claim 25
Dependent Claim
22 words
The semiconductor device of claim 21 , wherein said bump base metal film and said bump are formed above said semiconductor elements.
Claim 26
Dependent Claim
26 words
The semiconductor device of claim 20 , further comprising a capacitor formed with said uppermost wiring layer and the top one of said copper wiring layers.
Claim 27
Dependent Claim
23 words
The semiconductor device of claim 20 , wherein said surface protective film has a thickness that causes no hindrance in blowing said fuse.
Claim 28
Dependent Claim
21 words
The semiconductor device of claim 20 , wherein at least part of said copper wiring layers has a dual damascene structure.
Claim 29
Dependent Claim
19 words
The semiconductor device of claim 20 , wherein said fuse is capable of being blown with an energy beam.
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