US6653231B2
Expired / Lapsed
US
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Process for reducing the critical dimensions of integrated circuit device features
Assignee: GlobalFoundries US Inc
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Filing: 2001-03-28
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Granted: 2003-11-25
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Expires: 2021-03-28
Abstract
Abstract A process for forming sub-lithographic features in an integrated circuit is disclosed herein. A process for enhancing the etch trimmability and the etch stability of features patterned on a photoresist layer is also disclosed herein. The process includes curing a photoresist layer after patterning and development but before an etch process is performed thereon. By controlling the formation of the cured portions of the features patterned on the photoresist layer, the features can be trimmed to sub-lithographic critical dimensions without pattern deformation or occurrence of other failure mechanisms.
Inventors
- 👤 Uzodinma Okoroanyanwu
- 👤 Chih-Yuh Yang
- 👤 Jeffrey A. Shields
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:23
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/71; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10P74/00; H10P74/23
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
123 words
A method for achieving a sub-lithographic critical dimension in an integrated circuit device feature, the integrated circuit device feature formed on a semiconductor wafer using a feature patterned on a photoresist layer, the method comprising the steps of: curing the feature patterned on the photoresist layer with an electron beam; and trimming the cured feature to form a trimmed feature, wherein the sub-lithographic critical dimension of the trimmed feature is dependent on a dose of the electron beam, wherein the cured feature includes at least one of a cured shell region and a cured top region, wherein the sub-lithographic dimension of the trimmed feature is at least approximately 60% less than a nominal lateral dimension of the feature patterned on the photoresist layer.
Claim 2
Independent Claim
123 words
A method for achieving a sub-lithographic critical dimension in an integrated circuit device feature, the integrated circuit device feature formed on a semiconductor wafer using a feature patterned on a photoresist layer, the method comprising the steps of: curing the feature patterned on the photoresist layer with an electron beam; and trimming the cured feature to form a trimmed feature, wherein the sub-lithographic critical dimension of the trimmed feature is dependent on a dose of the electron beam, wherein the cured feature includes at least one of a cured shell region and a cured top region, wherein the sub-lithographic dimension of the trimmed feature is at least approximately 60% less than a nominal lateral dimension of the feature patterned on the photoresist layer.
Claim 3
Independent Claim
105 words
A method for achieving a sub-lithographic critical demension in an integrated circuit device feature, the integrated circuit device feature formed on a semiconductor wafer using a feature patterned on a photoresist layer, the method comprising the steps of: curing the feature patterned on the photoresist layer with an electron beam; and trimming the cured feature to farm a trimmed feature, wherein the sub-lithographic critical dimension of the trimmed feature is dependent on a dose of the electron beam, wherein the sub-lithographic dimension of the trimmed feature is at least approximately 60% less than a nominal lateral dimension of the feature patterned on the photoresist layer.
Claim 4
Independent Claim
105 words
A method for achieving a sub-lithographic critical demension in an integrated circuit device feature, the integrated circuit device feature formed on a semiconductor wafer using a feature patterned on a photoresist layer, the method comprising the steps of: curing the feature patterned on the photoresist layer with an electron beam; and trimming the cured feature to farm a trimmed feature, wherein the sub-lithographic critical dimension of the trimmed feature is dependent on a dose of the electron beam, wherein the sub-lithographic dimension of the trimmed feature is at least approximately 60% less than a nominal lateral dimension of the feature patterned on the photoresist layer.
Claim 5
Dependent Claim
26 words
The method of claim 1 , wherein the curing step includes at least one of decarboxlyating, cross-linking, and densifying the feature patterned on the photoresist layer.
Claim 6
Dependent Claim
20 words
The method of claim 3 , wherein each of the cured shell region and the cured top region is cross-linked.
Claim 7
Dependent Claim
31 words
The method of claim 1 , wherein a material comprising the photoresist layer is at least one of an acrylate-based polymer, an alicyclic-based polymer, and an acrylate and alicyclic hybrid-based polymer.
Claim 8
Dependent Claim
18 words
The method of claim 1 , wherein the electron beam dose is less than 2000 μC/cm 2 .
Claim 9
Dependent Claim
104 words
A process for patterning a feature an a photoresist layer having enhanced etch stability and trimmability in an etch process, the feature including a top region, the process comprising: forming a feature associated with the photoresist layer; irradiating the feature patterned on the photoresist layer with an electron beam, wherein at least the top region of the feature is cross-linked to the point of complete decomposition to form a cross-linked top region; and trimming the irradiated feature wherein the sub-lithographic dimension of the trimmed feature is at least approximately 60% less than a nominal lateral dimension of the feature formed on the photoresist layer.
Claim 10
Dependent Claim
104 words
A process for patterning a feature an a photoresist layer having enhanced etch stability and trimmability in an etch process, the feature including a top region, the process comprising: forming a feature associated with the photoresist layer; irradiating the feature patterned on the photoresist layer with an electron beam, wherein at least the top region of the feature is cross-linked to the point of complete decomposition to form a cross-linked top region; and trimming the irradiated feature wherein the sub-lithographic dimension of the trimmed feature is at least approximately 60% less than a nominal lateral dimension of the feature formed on the photoresist layer.
Claim 11
Dependent Claim
28 words
The process of claim 7 , wherein a vertical thickness of the cross-linked top region is determined by a penetration depth of the electron beam into the feature.
Claim 12
Dependent Claim
24 words
The process of claim 8 , wherein the penetration depth of the electron beam is a function of an energy of the electron beam.
Claim 13
Dependent Claim
24 words
The process of claim 7 , wherein the etch process is at least one of a resist trimming process and an underlayer etching process.
Claim 14
Dependent Claim
18 words
The process of claim 7 , wherein the cross-linked top region increases a bulk modulus of the feature.
Claim 15
Dependent Claim
18 words
The process of claim 7 , wherein the cross-linked top region increases a bulk toughness of the feature.
Claim 16
Dependent Claim
24 words
The process of claim 7 , wherein the cross-linked top region increases an interfacial toughness of a substrate-resist polymer bond associated with the feature.
Claim 17
Dependent Claim
115 words
An integrated circuit fabrication process, the process comprising: curing a patterned photoresist layer with an electron beam, the patterned photoresist layer disposed over a substrate and including a feature; trimming the cured photoresist layer with a plasma etch, the cured photoresist layer including a trimmed feature; and transferring a pattern of the trimmed photoresist layer to the substrate, wherein a critical dimension of the transferred pattern on the substrate has a sub-lithographic dimension and is a function of a dose of the electron beam in the curing step, wherein the sub-lithographic dimension of the trimmed feature is at least approximately 60% less than a nominal lateral dimension of the feature patterned on the photoresist layer.
Claim 18
Dependent Claim
115 words
An integrated circuit fabrication process, the process comprising: curing a patterned photoresist layer with an electron beam, the patterned photoresist layer disposed over a substrate and including a feature; trimming the cured photoresist layer with a plasma etch, the cured photoresist layer including a trimmed feature; and transferring a pattern of the trimmed photoresist layer to the substrate, wherein a critical dimension of the transferred pattern on the substrate has a sub-lithographic dimension and is a function of a dose of the electron beam in the curing step, wherein the sub-lithographic dimension of the trimmed feature is at least approximately 60% less than a nominal lateral dimension of the feature patterned on the photoresist layer.
Claim 19
Dependent Claim
19 words
The process of claim 14 , wherein the critical dimension decreases as the dose of the electron beam increases.
Claim 20
Dependent Claim
25 words
The process of claim 14 , wherein the dose of the electron beam is in the range of 0.1 to approximately 2000 μC/cm 2 .
Claim 21
Dependent Claim
21 words
The process of claim 14 , wherein the curing step includes cross-linking at least a portion of the patterned photoresist layer.
Claim 22
Dependent Claim
42 words
The process of claim 17 , wherein the at least a portion of the patterned photoresist layer that has been cross-linked permits a trimming time of the trimming step to be greater than 20 seconds without the cured photoresist layer becoming deformed.
Claim 23
Dependent Claim
27 words
The process of claim 14 , wherein the patterned photoresist layer is comprised of an acrylate-based polymer, an alicyclic-based polymer, or an acrylate and alicyclic hybrid-based polymer.
Claim 24
Dependent Claim
16 words
The process of claim 14 , wherein, the critical dimension is in a sub-50 nm range.
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