US6103457A
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US
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Method for reducing faceting on a photoresist layer during an etch process
Assignee: NXP BV
•
Filing: 1998-05-28
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Granted: 2000-08-15
•
Expires: 2018-05-28
Abstract
Abstract Disclosed is a method for reducing faceting of a photoresist layer during an etch process. The method includes depositing a metallization layer on a semiconductor substrate, and forming a photoresist layer over at least a portion of the metallization layer. The method also includes treating the photoresist layer with a first plasma so as to harden the photoresist layer against a metal etching plasma. The method further includes exposing the metallization layer and the photoresist layer to the metal etching plasma. The metal etching plasma etches the metallization layer at a substantially faster rate than the treated photoresist layer so that faceting on the photoresist layer is substantially reduced.
Inventors
- 👤 Calvin T. Gabriel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:36
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40; H; H10; H10P; H10P50/00; H10P50/71; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10P95/00; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
111 words
A method for reducing faceting of a photoresist layer during an etch process, the method comprising: a) depositing a metallization layer on a semiconductor substrate; b) forming a photoresist layer over at least a portion of the metallization layer; c) treating the photoresist layer with a first plasma so as to harden the photoresist layer against a metal etching plasma that is different from the first plasma; and d) exposing the metallization layer and the photoresist layer to the metal etching plasma, the metal etching plasma etching the metallization layer at a substantially faster rate than the treated photoresist layer such that the photoresist layer remains substantially intact from faceting effects.
Claim 2
Independent Claim
111 words
A method for reducing faceting of a photoresist layer during an etch process, the method comprising: a) depositing a metallization layer on a semiconductor substrate; b) forming a photoresist layer over at least a portion of the metallization layer; c) treating the photoresist layer with a first plasma so as to harden the photoresist layer against a metal etching plasma that is different from the first plasma; and d) exposing the metallization layer and the photoresist layer to the metal etching plasma, the metal etching plasma etching the metallization layer at a substantially faster rate than the treated photoresist layer such that the photoresist layer remains substantially intact from faceting effects.
Claim 3
Dependent Claim
35 words
The method as recited in claim 1, wherein the metal etching plasma is selected from the plasma group consisting essentially of BCl 3 , Cl 2 , CCl 4 , HCl, and SiCl 4 .
Claim 4
Dependent Claim
15 words
The method as recited in claim 1, wherein the first plasma is a fluorocarbon-based plasma.
Claim 5
Dependent Claim
32 words
The method as recited in claim 3, wherein the fluorocarbon plasma is selected from the plasma group consisting essentially of CF 4 , CHF 3 , and C 2 F 6 .
Claim 6
Dependent Claim
15 words
The method as recited in claim 1, wherein the first plasma is a fluorine-based plasma.
Claim 7
Dependent Claim
16 words
The method as recited in claim 5, wherein the fluorine-based plasma is a SF 6 plasma.
Claim 8
Dependent Claim
15 words
The method as recited in claim 1, wherein the first plasma is a carbon-based plasma.
Claim 9
Dependent Claim
22 words
The method as recited in claim 1, further comprising: forming a dielectric layer over the metallization layer and under the photoresist layer.
Claim 10
Dependent Claim
23 words
The method as recited in claim 8, wherein the dielectric layer forming further comprises: depositing a dielectric layer; and etching the dielectric layer.
Claim 11
Dependent Claim
20 words
The method as recited in claim 9, wherein the dielectric layer is etched during the photoresist layer treating operation c).
Claim 12
Dependent Claim
16 words
The method as recited in claim 9, wherein the dielectric layer is an anti-reflective coating layer.
Claim 13
Dependent Claim
27 words
The method as recited in claim 1, wherein the metallization layer and the photoresist layer are exposed to the metal etching plasma in a plasma etching process.
Claim 14
Dependent Claim
33 words
The method as recited in claim 1, wherein the hardened photoresist layer inhibits the metal etching plasma from substantially etching the photoresist layer and the portion of metallization layer under the photoresist layer.
Claim 15
Dependent Claim
26 words
The method as recited in claim 1, wherein the treating of the photoresist layer substantially reduces sensitivity of the photoresist layer to the metal etching plasma.
Claim 16
Dependent Claim
21 words
The method as recited in claim 1, wherein the metallization layer comprises a metal stack including a plurality of metal layers.
Claim 17
Dependent Claim
53 words
The method as recited in claim 1, wherein the photoresist layer forming further comprises: spin coating a photoresist material over the metallization layer; exposing the coated photoresist material under a light source to a desired pattern; and developing the coated photoresist material to produce the photoresist layer adapted to function as a photomask.
Claim 18
Independent Claim
119 words
A method for reducing faceting of a photoresist layer during an etch process, the method comprising: a) depositing a first layer on a semiconductor substrate; b) forming a photoresist layer over at least a portion of the first layer; c) treating the photoresist layer with a first plasma so as to harden the photoresist layer against an etching plasma that is adapted to etch the first layer, wherein the etching plasma is different from the first plasma; and d) exposing the first layer and the photoresist layer to the etching plasma, the etching plasma etching the first layer at a substantially faster rate than the treated photoresist layer such that the photoresist layer remains substantially intact from faceting effects.
Claim 19
Independent Claim
119 words
A method for reducing faceting of a photoresist layer during an etch process, the method comprising: a) depositing a first layer on a semiconductor substrate; b) forming a photoresist layer over at least a portion of the first layer; c) treating the photoresist layer with a first plasma so as to harden the photoresist layer against an etching plasma that is adapted to etch the first layer, wherein the etching plasma is different from the first plasma; and d) exposing the first layer and the photoresist layer to the etching plasma, the etching plasma etching the first layer at a substantially faster rate than the treated photoresist layer such that the photoresist layer remains substantially intact from faceting effects.
Claim 20
Dependent Claim
34 words
The method as recited in claim 17, wherein the etching plasma is selected from the plasma group consisting essentially of BCl 3 , Cl 2 , CCl 4 , HCl, and SiCl 4 .
Claim 21
Dependent Claim
15 words
The method as recited in claim 17, wherein the first plasma is a fluorocarbon-based plasma.
Claim 22
Dependent Claim
32 words
The method as recited in claim 19, wherein the fluorocarbon plasma is selected from the plasma group consisting essentially of CF 4 , CHF 3 , and C 2 F 6 .
Claim 23
Dependent Claim
15 words
The method as recited in claim 17, wherein the first plasma is a fluorine-based plasma.
Claim 24
Dependent Claim
15 words
The method as recited in claim 17, wherein the first plasma is a carbon-based plasma.
Claim 25
Dependent Claim
16 words
The method as recited in claim 21, wherein the fluorine-based plasma is a SF 6 plasma.
Claim 26
Dependent Claim
22 words
The method as recited in claim 17, further comprising: forming a dielectric layer over the first layer and under the photoresist layer.
Claim 27
Dependent Claim
27 words
The method as recited in claim 17, wherein the first layer and the photoresist layer are both exposed to the etching plasma in a plasma etching process.
Claim 28
Dependent Claim
33 words
The method as recited in claim 17, wherein the hardened photoresist layer inhibits the etching plasma from substantially etching the photoresist layer and the portion of first layer disposed under the photoresist layer.
Claim 29
Dependent Claim
25 words
The method as recited in claim 17, wherein the treating of the photoresist layer substantially reduces sensitivity of the photoresist layer to the etching plasma.
Claim 30
Dependent Claim
15 words
The method as recited in claim 17, wherein the first layer is a metallization layer.
Claim 31
Dependent Claim
21 words
The method as recited in claim 17, wherein the first layer is a metal stack including a plurality of metal layers.
Claim 32
Dependent Claim
53 words
The method as recited in claim 17, wherein the photoresist layer forming further comprises: spin coating a photoresist material over the first layer; exposing the coated photoresist material under a light source to a desired pattern; and developing the coated photoresist material to produce the photoresist layer adapted to function as a photomask.
Claim 33
Independent Claim
111 words
A method for reducing faceting of a photoresist layer during an etch process, the method comprising: a) depositing a metallization layer on a semiconductor substrate; b) forming a photoresist layer over at least a portion of the metallization layer; c) treating the photoresist layer with a fluorocarbon plasma so as to harden the photoresist layer against a metal etching plasma that is different from the fluorocarbon plasma; and d) exposing the metallization layer and the photoresist layer to the metal etching plasma, the metal etching plasma etching the metallization layer at a substantially faster rate than the treated photoresist layer such that the photoresist layer remains substantially intact from faceting effects.
Claim 34
Independent Claim
111 words
A method for reducing faceting of a photoresist layer during an etch process, the method comprising: a) depositing a metallization layer on a semiconductor substrate; b) forming a photoresist layer over at least a portion of the metallization layer; c) treating the photoresist layer with a fluorocarbon plasma so as to harden the photoresist layer against a metal etching plasma that is different from the fluorocarbon plasma; and d) exposing the metallization layer and the photoresist layer to the metal etching plasma, the metal etching plasma etching the metallization layer at a substantially faster rate than the treated photoresist layer such that the photoresist layer remains substantially intact from faceting effects.
Claim 35
Dependent Claim
35 words
The method as recited in claim 31, wherein the metal etching plasma is selected from the plasma group consisting essentially of BCl 3 , Cl 2 , CCl 4 , HCl, and SiCl 4 .
Claim 36
Dependent Claim
32 words
The method as recited in claim 31, wherein the fluorocarbon plasma is selected from the plasma group consisting essentially of CF 4 , CHF 3 , and C 2 F 6 .
Claim 37
Dependent Claim
22 words
The method as recited in claim 31, further comprising: forming a dielectric layer over the metallization layer and under the photoresist layer.
Claim 38
Dependent Claim
23 words
The method as recited in claim 34, wherein the dielectric layer forming further comprises: depositing a dielectric layer; and etching the dielectric layer.
Claim 39
Dependent Claim
20 words
The method as recited in claim 35, wherein the dielectric layer is etched while the photoresist layer is being treated.
Claim 40
Dependent Claim
16 words
The method as recited in claim 34, wherein the dielectric layer is an anti-reflective coating layer.
Claim 41
Dependent Claim
27 words
The method as recited in claim 31, wherein the metallization layer and the photoresist layer are exposed to the metal etching plasma in a plasma etching process.
Claim 42
Dependent Claim
33 words
The method as recited in claim 31, wherein the hardened photoresist layer inhibits the metal etching plasma from substantially etching the photoresist layer and the portion of metallization layer under the photoresist layer.
Claim 43
Dependent Claim
26 words
The method as recited in claim 31, wherein the treating of the photoresist layer substantially reduces sensitivity of the photoresist layer to the metal etching plasma.
Claim 44
Dependent Claim
21 words
The method as recited in claim 31, wherein the metallization layer comprises a metal stack including a plurality of metal layers.
Claim 45
Dependent Claim
53 words
The method as recited in claim 31, wherein the photoresist layer forming further comprises: spin coating a photoresist material over the metallization layer; exposing the coated photoresist material under a light source to a desired pattern; and developing the coated photoresist material to produce the photoresist layer adapted to function as a photomask.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-15 | 2004-02-14 | 2004-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-15 | 2008-02-14 | 2008-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-15 | 2012-02-14 | 2012-08-15 | $7700.00 | Window Closed / Lapsed |