US5757060A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Contamination guard ring for semiconductor integrated circuit applications
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1996-07-19
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Granted: 1998-05-26
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Expires: 2016-07-19
Abstract
Abstract The guard ring is a barrier which prevents contaminates from diffusing through a window opening through insulating layers to adjacent semiconductor devices. The guard ring is formed surrounding a window in the insulation layers over a fuse link or an alignment mark. The guard ring is an annular metal ring that penetrates two or more insulating layers and contacts the substrate.
Inventors
- 👤 Jin-Yuan Lee
- 👤 John Chih-Shih Wei
- 👤 Ying-Chen Chao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10W20/494; H10W46/00; H10W46/101; H10W46/501; Y; Y10; Y10S; Y10S438/00; Y10S438/975
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
242 words
A guard ring for a semiconductor integrated circuit device that surrounds window openings and a portion of a fuse link, comprising: a semiconductor substrate having semiconductor devices and a window area over which a portion of a fuse link lies; a first insulating layer on the substrate; a fuse link on said first insulating layer and portions of said fuse link overlying said window area in said semiconductor substrate; a second insulating layer over said fuse link and said first insulating layer; first split annular openings through said first insulating layer and said second insulating layer, each of said split annular openings located on opposite sides of said fuse link and exposing the substrate; said first split annual openings surrounding said window area; a first annular metal layer in contact the substrate through said first split annular openings; a third insulating layer overlying said first metal layer and said second insulating layer; a first window opening in said third insulating layer over at least a portion of said fuse link and over said window area; a second annular opening, that surrounds said fusible link and said window area, through said third insulating layer and over said first split annular openings; a second annular metal layer in contact with said first metal layer in said second annular opening; and a fourth insulating layer over said second metal layer and said third insulating layer having a second window opening over the first window opening.
Claim 2
Dependent Claim
242 words
A guard ring for a semiconductor integrated circuit device that surrounds window openings and a portion of a fuse link, comprising: a semiconductor substrate having semiconductor devices and a window area over which a portion of a fuse link lies; a first insulating layer on the substrate; a fuse link on said first insulating layer and portions of said fuse link overlying said window area in said semiconductor substrate; a second insulating layer over said fuse link and said first insulating layer; first split annular openings through said first insulating layer and said second insulating layer, each of said split annular openings located on opposite sides of said fuse link and exposing the substrate; said first split annual openings surrounding said window area; a first annular metal layer in contact the substrate through said first split annular openings; a third insulating layer overlying said first metal layer and said second insulating layer; a first window opening in said third insulating layer over at least a portion of said fuse link and over said window area; a second annular opening, that surrounds said fusible link and said window area, through said third insulating layer and over said first split annular openings; a second annular metal layer in contact with said first metal layer in said second annular opening; and a fourth insulating layer over said second metal layer and said third insulating layer having a second window opening over the first window opening.
Claim 3
Dependent Claim
29 words
The guard ring of claim 1 wherein in the area where said first and second guard rings overlie the fuse, the first metal layer overlies the second insulating layer.
Claim 4
Dependent Claim
25 words
The guard ring of claim 1 wherein the first insulating layer is silicon oxide having a thickness in the range of 2000 to 8000 angstroms.
Claim 5
Dependent Claim
25 words
The guard ring of claim 1 wherein the second insulating layer is borophosphosilicate glass having a thickness in the range of 3000 to 15,000 angstroms.
Claim 6
Dependent Claim
36 words
The guard ring of claim 1 wherein the third insulating layer is a composite layer including silicon oxide, spin on glass, and silicon oxide having an overall thickness in the range of 1000 to 20,000 angstroms.
Claim 7
Dependent Claim
25 words
The guard ring of claim 1 wherein the fourth insulating layer is silicon nitride having a thickness in the range of 3000 to 20,000 angstroms.
Claim 8
Dependent Claim
46 words
The guard ring of claim 1 wherein said first metal layer is a metal selected from the group consisting of: aluminum, aluminum alloy, titanium, titanium alloy, tungsten, and tungsten alloy and said first metal layer, having a thickness in the range of 2000 to 15,000 angstroms.
Claim 9
Dependent Claim
38 words
The guard ring of claim 1 wherein the second metal layer is a metal selected from the group of titanium, Ti-alloy, aluminum, aluminum-alloy, tungsten and tungsten alloy, having a thickness in the range of 4000 to 15,000 angstroms.
Claim 10
Dependent Claim
25 words
The guard ring of claim 1 wherein said first and second split annular openings have a width in the range of 0.3 to 10 microns.
Claim 11
Dependent Claim
175 words
A guard ring for a semiconductor integrated circuit device that surrounds a window opening in insulating layers over a window area on a semiconductor substrate, comprising: a semiconductor substrate having semiconductor devices and a window area; a first insulating layer on the substrate; a second insulating layer over said first insulating layer; first annular openings through said first and said second insulating layers surrounding said window area; a first annular metal layer in contact the substrate through said annular opening; a third insulating layer overlying portions of said first metal layer and said second insulating layer; a first window opening in said third insulating layer over said window area; a second annular opening surrounding said first window opening through said third insulating layer and over said first annular openings; a second annular metal layer in contact with said first metal layer in said second annular opening; a fourth insulating layer over the second metal layer and said third insulating layer; and a second window opening over the first window opening in said fourth insulation layer.
Claim 12
Dependent Claim
175 words
A guard ring for a semiconductor integrated circuit device that surrounds a window opening in insulating layers over a window area on a semiconductor substrate, comprising: a semiconductor substrate having semiconductor devices and a window area; a first insulating layer on the substrate; a second insulating layer over said first insulating layer; first annular openings through said first and said second insulating layers surrounding said window area; a first annular metal layer in contact the substrate through said annular opening; a third insulating layer overlying portions of said first metal layer and said second insulating layer; a first window opening in said third insulating layer over said window area; a second annular opening surrounding said first window opening through said third insulating layer and over said first annular openings; a second annular metal layer in contact with said first metal layer in said second annular opening; a fourth insulating layer over the second metal layer and said third insulating layer; and a second window opening over the first window opening in said fourth insulation layer.
Claim 13
Dependent Claim
18 words
The guard ring of claim 10 wherein said first window surrounds at least a laser repair alignment mark.
Claim 14
Dependent Claim
25 words
The guard ring of claim 10 wherein the first insulating layer is silicon oxide having a thickness in the range of 2000 to 8000 angstroms.
Claim 15
Dependent Claim
25 words
The guard ring of claim 10 wherein the second insulating layer is borophosphosilicate glass having a thickness in the range of 3000 to 15,000 angstroms.
Claim 16
Dependent Claim
36 words
The guard ring of claim 10 wherein the third insulating layer is a composite layer consisting of silicon oxide, spin on glass, silicon oxide having an overall thickness in the range of 1000 to 20,000 angstroms.
Claim 17
Dependent Claim
25 words
The guard ring of claim 10 wherein the fourth insulating layer is silicon nitride having a thickness in the range of 3000 to 20,000 angstroms.
Claim 18
Dependent Claim
39 words
The guard ring of claim 10 wherein the first metal layer is a metal selected from the group consisting of: titanium, Ti-alloy, aluminum, aluminum-alloy, tungsten and tungsten alloy, having a thickness in the range of 2000 to 15,000 angstroms.
Claim 19
Dependent Claim
38 words
The guard ring of claim 10 wherein the second metal layer is a metal selected from the group of titanium, Ti-alloy, aluminum, aluminum-alloy, tungsten and tungsten alloy, having a thickness in the range of 4000 to 15,000 angstroms.
Claim 20
Dependent Claim
25 words
The guard ring of claim 10 wherein said first and second split annular openings have a width in the range of 0.3 to 10 microns.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-25 | 2001-11-24 | 2002-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-25 | 2005-11-24 | 2006-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-25 | 2009-11-24 | 2010-05-26 | $7700.00 | Window Closed / Lapsed |