US5661331A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fuse bank
Assignee: Polaris Innovations Ltd
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Filing: 1996-06-24
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Granted: 1997-08-26
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Expires: 2016-06-24
Abstract
Abstract A fuse bank includes a fuse link being disposed above and insulated from a substrate. A first doped region in the substrate is a guard ring surrounding the fuse link. A second doped region has the same conduction type as the first doped region and is adjacent the first doped region. An insulation separates the second doped region from the first doped region. A high-impedance semiconductor component connects the first doped region to a first supply potential. The second doped region is connected to a second supply potential.
Inventors
- 👤 Heinz Hebbeker
- 👤 Werner Reczek
- 👤 Dominique Savignac
- 👤 Hartmud Terletzki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/931; H10W42/00; H10W42/80
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
91 words
A fuse bank, comprising: a substrate; a fuse link being disposed above and insulated from said substrate; a first doped region in said substrate being a guard ring surrounding said fuse link; a second doped region having the same conduction type as said first doped region and being adjacent said first doped region; an insulation separating said second doped region from said first doped region; a high-impedance semiconductor component connecting said first doped region to a first supply potential; and said second doped region being connected to a second supply potential.
Claim 2
Dependent Claim
91 words
A fuse bank, comprising: a substrate; a fuse link being disposed above and insulated from said substrate; a first doped region in said substrate being a guard ring surrounding said fuse link; a second doped region having the same conduction type as said first doped region and being adjacent said first doped region; an insulation separating said second doped region from said first doped region; a high-impedance semiconductor component connecting said first doped region to a first supply potential; and said second doped region being connected to a second supply potential.
Claim 3
Dependent Claim
16 words
The fuse bank according to claim 1, wherein said high-impedance semiconductor component is an LDD transistor.
References Cited (Backward Citations)
EP0076967A2
Cited
US4723155A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-25 | 2001-02-24 | 2001-08-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-25 | 2005-02-24 | 2005-08-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-25 | 2009-02-24 | 2009-08-26 | $7700.00 | Window Closed / Lapsed |