EP0076967A2
Expired / Lapsed
EP
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Semiconductor device having a fuse element
Assignee: Toshiba Corp
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Filing: 1982-09-28
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Granted: —
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Expires: 2002-09-28
Abstract
Abstract A fuse element (17) is formed on a field insulation film (12 . ) on a semiconductor substrate (11) on n conductivity type in which MOS transistors are formed. A first guard ring region (19) of second conductivity type is provided in the substrate, surrounding the semiconductor substrate region under the fuse element. A second guard ring region (20) of first conductivity type is formed in the substrate, surrounding the first guard ring region. Proper potentials are applied to the first and second guard ring regions. With such a structural arrangement, electrons, holes or ions generated when the fuse element is melted away are prevented from being diffused.
Inventors
- 👤 Yukimasa Uchida
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 21:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10W20/492; H10W20/493; H10W20/494; Y; Y10; Y10S; Y10S257/00; Y10S257/926
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
111 words
A semiconductor device having a semiconductor substrate of first conductivity type in which metal oxide semiconductor (MOS) transistors are formed and a fuse element (17) formed on a field insulation film (12 3 ) provided on said semiconductor substrate (11), characterized by comprising; a first guard ring region (19) formed in said substrate (11) so as to surround that region of said semiconductor substrate region which is under said fuse element (17); and a second semiconductor guard ring region (20) formed in said substrate (11) so as to surround said first semiconductor ring region (19); said first and second semiconductor guard ring regions being different from each other in conductivity type.
Claim 2
Dependent Claim
111 words
A semiconductor device having a semiconductor substrate of first conductivity type in which metal oxide semiconductor (MOS) transistors are formed and a fuse element (17) formed on a field insulation film (12 3 ) provided on said semiconductor substrate (11), characterized by comprising; a first guard ring region (19) formed in said substrate (11) so as to surround that region of said semiconductor substrate region which is under said fuse element (17); and a second semiconductor guard ring region (20) formed in said substrate (11) so as to surround said first semiconductor ring region (19); said first and second semiconductor guard ring regions being different from each other in conductivity type.
Claim 3
Dependent Claim
66 words
A semiconductor device having a semiconductor substrate (11) of first conductivity type in which metal oxide semiconductor (MOS) transistors are formed and a fuse element (17) formed on a field insulation film (12 3 ) provided on said semiconductor substrate, characterized by comprising a semiconductor well region (35) of second conductivity type formed in that region of said semiconductor substrate which is under said fuse element.
Claim 4
Dependent Claim
66 words
A semiconductor device having a semiconductor substrate (11) of first conductivity type in which metal oxide semiconductor (MOS) transistors are formed and a fuse element (17) formed on a field insulation film (12 3 ) provided on said semiconductor substrate, characterized by comprising a semiconductor well region (35) of second conductivity type formed in that region of said semiconductor substrate which is under said fuse element.
Claim 5
Dependent Claim
38 words
A semiconductor device according to claim 1, characterized in that said semiconductor guard ring region (19) of second conductivity type of said first and second semiconductor guard ring regions is reversely biased with respect to said semiconductor substrate.
Claim 6
Dependent Claim
42 words
A semiconductor device according to claim 1, characterized in that said semiconductor guard ring region (20) of second conductivity type of said first and second semiconductor guard ring regions has an impurity concentration of at least 10 18 c m- 3 .
Claim 7
Dependent Claim
62 words
A semiconductor device according to claim 1, characterized in that said first semiconductor guard ring region (19) is of second conductivity type, and said semiconductor device further comprises a semiconductor well region (35a) of second conductivity type in said semiconductor substrate (11) under said fuse element (17), and said second conductor well region is in contact with said first semiconductor region (19).
Claim 8
Dependent Claim
35 words
A semiconductor device according to claim 5, characterized in that said first semiconductor guard ring region (19) is kept at ground potential, and said second semiconductor guard,ring region (20) is kept at a positive potential.
Claim 9
Dependent Claim
70 words
A semiconductor device according to claim 1, characterized in that said first semiconductor guard ring region is of first conductivity type and said semiconductor device further comprises a semiconductor well region (35b) of second conductivity type in said semiconductor substrate (11) under said fuse element (17), and said semiconductor well region is in contact with said first semiconductor guard ring region (19) and said second semiconductor guard ring region (20).
Claim 10
Dependent Claim
36 words
A semiconductor device according to claim 6, characterized in that said second semiconductor guard ring region (20) is kept at ground potential, and said first semiconductor guard ring region (19) is kept at a positive potential.
Claim 11
Dependent Claim
44 words
A semiconductor device according to claim 2, characterized in that an impurity concentration and a depth of said second conductivity type semiconductor well region (35) are equal to those of the well region in the surface of said first conductivity type semiconductor substrate (11).
Claim 12
Dependent Claim
28 words
A semiconductor device according to claim 2, characterized in that said second conductivity type semiconductor well region (35) is reversely biased with respect to said semiconductor substrate (11).
Claim 13
Dependent Claim
31 words
A semiconductor device according to claim 1 or 2, characterized in that said fuse element (17) is of current melting type in which said fuse element is melted away by current.
Claim 14
Dependent Claim
32 words
A semiconductor device according to claim 1 or 2, characterized in that said fuse element (17) is of laser interrupting type in which said fuse element is cut off by laser beams.
Claim 15
Dependent Claim
31 words
A semiconductor device according to claim 1 or 2, characterized in that said fuse element (17) is of laser shortcircuiting type in which said fuse element is shortcircuited by laser beams.
Claim 16
Dependent Claim
38 words
A semiconductor device according to claim 1 or 2, characterized in that said fuse element (17) is made of the same material as the gate electrode material of MOS transistors formed in said first conductivity type semiconductor substrate.
Claim 17
Dependent Claim
44 words
A semiconductor device according to claim 1 or 2, characterized in that the thickness of the field insulation film on which said fuse element (17) is formed is thicker than that of a gate insulation film of MOS transistors formed in said semiconductor substrate.
References Cited (Backward Citations)
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