Patent US6618290B1 successfully refreshed from Google Patents.
US6618290B1
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Method of programming a non-volatile memory cell using a baking process
Assignee: Cypress Semiconductor Corp
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Filing: 2001-06-13
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Granted: 2003-09-09
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Expires: 2021-06-13
Abstract
Abstract A method of programming that includes programming a fresh memory cell with a substrate that includes a first region and a second region with a channel therebetween and a gate above the channel, and a charge trapping region that contains a first amount of charge. Baking the programmed fresh cell causing a charge loss in the channel while the remaining charge within the channel is distributed more locally at the first region when compared to the distribution of charge prior to the baking.
Inventors
- 👤 Janet S. Y. Wang
- 👤 Narbeh Derhacobian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:35
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; G11C16/0475
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
83 words
A method of programming comprising: programming a fresh memory cell with a substrate that comprises a first region and a second region with a channel therebetween and a gate above said channel, and a charge trapping region that contains a first amount of charge; and baking said programmed fresh cell causing a charge loss in said channel while the remaining charge within said channel is distributed more locally at said first region when compared to the distribution of charge prior to said baking.
Claim 2
Independent Claim
83 words
A method of programming comprising: programming a fresh memory cell with a substrate that comprises a first region and a second region with a channel therebetween and a gate above said channel, and a charge trapping region that contains a first amount of charge; and baking said programmed fresh cell causing a charge loss in said channel while the remaining charge within said channel is distributed more locally at said first region when compared to the distribution of charge prior to said baking.
Claim 3
Dependent Claim
37 words
The method of claim 1 , further comprising programming said baked programmed cell, wherein the charge within said channel is distributed more locally at said first region when compared to the distribution of charge after said baking.
Claim 4
Dependent Claim
14 words
The method of claim 1 , wherein said first region is a drain region.
Claim 5
Dependent Claim
26 words
The method of claim 1 , wherein said baking comprises applying a constant temperature of approximately 250° C. to said memory cell for about one hour.
Claim 6
Dependent Claim
15 words
The method of claim 1 , wherein said memory cell comprises an EEPROM memory cell.
Claim 7
Dependent Claim
16 words
The method of claim 1 , wherein said memory cell comprises a two bit memory cell.
Claim 8
Dependent Claim
16 words
The method of claim 5 , wherein said memory cell comprises a two bit memory cell.
Claim 9
Dependent Claim
27 words
The method of claim 1 , wherein said memory cell comprises: a P-type substrate; a dielectric layer that lies between said channel and said charge trapping region.
Claim 10
Dependent Claim
20 words
The method of claim 8 , wherein said memory cell further comprises an electrical isolation layer located above said channel.
Claim 11
Dependent Claim
13 words
The method of claim 8 , wherein said dielectric layer comprises silicon dioxide.
Claim 12
Dependent Claim
14 words
The method of claim 8 , wherein said charge trapping layer comprises silicon nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-09-08 | 2007-03-10 | 2007-09-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-09-08 | 2011-03-10 | 2011-09-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-09-08 | 2015-03-10 | 2015-09-09 | $7700.00 | Window Closed / Lapsed |