US5394101A
Expired / Lapsed
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Method for detecting mobile ions in a semiconductor device
Assignee: National Semiconductor Corp
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Filing: 1993-01-15
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Granted: 1995-02-28
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Expires: 2013-01-15
Abstract
Abstract A P-channel floating-gate MOS transistor is used to detect and measure positive mobile ions in the oxide layers of a semiconductor device. The transistor is first "programmed" by applying a voltage close to the breakdown voltage of the transistor, which causes electrons to tunnel through the oxide underlying the floating gate and to become trapped on the floating gate. This results in a negative voltage on the floating gate, which turns the transistor on and causes a first current, I DS0 to flow through the transistor. The semiconductor device is then baked, or heated, to accelerate the movement of positive mobile ions attracted to the negative charge previously trapped on the floating gate. Any positive mobile ions collected by the floating gate will neutralize a portion of the negative charge on the floating gate and will create a less negative voltage on the floating gate, resulting in a lesser current through the device after the bake. A second transistor, identical to the floating-gate transistor but with a gate connected to a test pad, is used to measure the charge gained by the floating gate during the bake and the corresponding concentration of collected mobile ions.
Inventors
- 👤 Jozef C. Mitros
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:34
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/27; H10P74/277; G; G01; G01R; G01R31/00; G01R31/26; G01R31/27; G01R31/275
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
184 words
A method for detecting the presence of mobile ions in a region of a semiconductor device incorporating a transistor structure having a floating gate, comprising the steps of: biasing the transistor structure to cause a charge accumulation on the floating gate; determining, subsequent to the biasing step, a first value of a parameter of the transistor structure, said first value corresponding to the charge accumulation on the floating gate; providing for the semiconductor device, subsequent to the first value determining step, an environment for a period of time to allow the movement of mobile ions to the floating gate, the mobile ions neutralizing a first portion of the charge accumulation thereupon and resulting in a remaining portion of the charge accumulation thereupon; and determining, subsequent to the providing step, a second value of the parameter of the transistor structure, said second value corresponding to the remaining portion of the charge accumulation on the floating gate, the second value differing from the first value in accordance with the first portion of the charge accumulation on the floating gate neutralized by the mobile ions thereby detected.
Claim 2
Independent Claim
184 words
A method for detecting the presence of mobile ions in a region of a semiconductor device incorporating a transistor structure having a floating gate, comprising the steps of: biasing the transistor structure to cause a charge accumulation on the floating gate; determining, subsequent to the biasing step, a first value of a parameter of the transistor structure, said first value corresponding to the charge accumulation on the floating gate; providing for the semiconductor device, subsequent to the first value determining step, an environment for a period of time to allow the movement of mobile ions to the floating gate, the mobile ions neutralizing a first portion of the charge accumulation thereupon and resulting in a remaining portion of the charge accumulation thereupon; and determining, subsequent to the providing step, a second value of the parameter of the transistor structure, said second value corresponding to the remaining portion of the charge accumulation on the floating gate, the second value differing from the first value in accordance with the first portion of the charge accumulation on the floating gate neutralized by the mobile ions thereby detected.
Claim 3
Dependent Claim
20 words
A method as in claim 1 wherein the parameter of the transistor structure is a voltage of the floating gate.
Claim 4
Dependent Claim
20 words
A method as in claim 1 wherein the parameter of the transistor structure is a current through the transistor structure.
Claim 5
Dependent Claim
15 words
A method as in claim 1 wherein the transistor structure comprises a P-channel transistor structure.
Claim 6
Dependent Claim
15 words
A method as in claim 1 wherein the transistor structure comprises an N-channel transistor structure.
Claim 7
Dependent Claim
22 words
A method as in claim 1 wherein the providing step comprises heating the semiconductor device to accelerate the movement of mobile ions.
Claim 8
Dependent Claim
28 words
A method as in claim 1 wherein the mobile ions are positive mobile ions and wherein the charge accumulation on the floating gate is a negative charge accumulation.
Claim 9
Independent Claim
251 words
A method for detecting the presence of positive mobile ions in a region of a semiconductor device incorporating an MOS transistor having a drain terminal, a floating gate, an oxide underlying the floating gate, and a source terminal, comprising the steps of: applying a first voltage to the drain terminal of the MOS transistor, the first voltage being of sufficient magnitude to cause electron injection into the oxide and a subsequent trapping of the electrons on the floating gate, resulting in a negative charge accumulation on the floating gate; applying a second voltage subsequent to the first voltage applying step, of lower magnitude than the first voltage, to the drain terminal of the MOS transistor while measuring a first current therethrough; providing for the semiconductor device, subsequent to the second voltage applying and first current measuring step, an environment for a period of time to allow the movement of positive mobile ions to the floating gate, the positive mobile ions neutralizing a first portion of the negative charge accumulation thereupon and resulting in a remaining portion of the negative charge accumulation thereupon; and applying the second voltage to the drain terminal of the MOS transistor, subsequent to the providing step, while measuring a second current therethrough corresponding to the remaining portion of the negative charge accumulation on the floating gate, the second current differing from the first current in accordance with the first portion of the negative charge accumulation on the floating gate neutralized by the positive mobile ions thereby detected.
Claim 10
Independent Claim
251 words
A method for detecting the presence of positive mobile ions in a region of a semiconductor device incorporating an MOS transistor having a drain terminal, a floating gate, an oxide underlying the floating gate, and a source terminal, comprising the steps of: applying a first voltage to the drain terminal of the MOS transistor, the first voltage being of sufficient magnitude to cause electron injection into the oxide and a subsequent trapping of the electrons on the floating gate, resulting in a negative charge accumulation on the floating gate; applying a second voltage subsequent to the first voltage applying step, of lower magnitude than the first voltage, to the drain terminal of the MOS transistor while measuring a first current therethrough; providing for the semiconductor device, subsequent to the second voltage applying and first current measuring step, an environment for a period of time to allow the movement of positive mobile ions to the floating gate, the positive mobile ions neutralizing a first portion of the negative charge accumulation thereupon and resulting in a remaining portion of the negative charge accumulation thereupon; and applying the second voltage to the drain terminal of the MOS transistor, subsequent to the providing step, while measuring a second current therethrough corresponding to the remaining portion of the negative charge accumulation on the floating gate, the second current differing from the first current in accordance with the first portion of the negative charge accumulation on the floating gate neutralized by the positive mobile ions thereby detected.
Claim 11
Dependent Claim
38 words
A method as in claim 8 wherein the providing step comprises heating the semiconductor device to accelerate the movement to the floating gate of positive mobile ions electrostaticly attracted to the negative charge accumulation on the floating gate.
Claim 12
Dependent Claim
27 words
A method as in claim 8 wherein the first voltage is of the same order, but is also less than, the breakdown voltage of the MOS transistor.
Claim 13
Dependent Claim
26 words
A method as in claim 10 wherein the MOS transistor is a P-channel MOS transistor and wherein the second voltage is approximately equal to -1 volt.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-27 | 1998-08-29 | 1999-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-27 | 2002-08-29 | 2003-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-27 | 2006-08-29 | 2007-02-28 | $7700.00 | Window Closed / Lapsed |