US6608371B2 — Semiconductor device and method of manufacturing …

Claim 1

Independent Claim 108 words

A method of manufacturing a semiconductor device, the method comprising: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole, wherein the first through hole extends through the semiconductor element.

Claim 2

Independent Claim 108 words

A method of manufacturing a semiconductor device, the method comprising: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole, wherein the first through hole extends through the semiconductor element.

Claim 3

Dependent Claim 45 words

The method of manufacturing a semiconductor device as defined by claim 1 , further comprising steps of: stacking a plurality of the semiconductor devices manufactured by the method defined by claim 1 ; and electrically connecting upper and lower semiconductor elements by the conductive member.

Claim 4

Dependent Claim 43 words

The method of manufacturing a semiconductor device as defined by claim 2 , wherein in the second step, the insulating material is formed to cover a surface of the semiconductor element which is opposite to a surface on which the electrode is formed.

Claim 5

Dependent Claim 61 words

The method of manufacturing a semiconductor device as defined by claim 3 , wherein the insulating material is formed of a resin, wherein a plurality of the semiconductor elements are pasted together by using the resin as an adhesive, and wherein the conductive member and the electrode are electrically connected by heating the resin to complete hardening contraction of the resin.

Claim 6

Dependent Claim 36 words

The method of manufacturing a semiconductor device as defined by claim 4 , wherein the resin is heated before a plurality of the semiconductor elements are pasted together, to activate the adhesive force of the resin.

Claim 7

Dependent Claim 32 words

The method of manufacturing a semiconductor device as defined by claim 1 , wherein the insulating material is formed of a resin, and wherein the resin is applied in the second step.

Claim 8

Dependent Claim 63 words

The method of manufacturing a semiconductor device as defined by claim 1 , wherein in the second step, the first through hole is filled with the insulating material, and the second through hole having a diameter smaller than a diameter of the first through hole is formed inside the first through hole, in such a manner as to pass through the insulating material.

Claim 9

Dependent Claim 37 words

The method of manufacturing a semiconductor device as defined by claim 1 , wherein the conductive member is a conductive paste, and wherein the second through hole is filled with the conductive paste in the second step.

Claim 10

Dependent Claim 34 words

The method of manufacturing a semiconductor device as defined by claim 1 , wherein the second through hole is formed with a taper that decreases in dimension towards the electrode of the semiconductor element.

Claim 11

Dependent Claim 35 words

The method of manufacturing a semiconductor device as defined by claim 1 , wherein the second through hole is formed with a taper that decreases in dimension away from the electrode of the semiconductor element.

Claim 12

Dependent Claim 33 words

The method of manufacturing a semiconductor device as defined by claim 1 , wherein at least one of the first through hole and the second through hole is formed by a laser beam.

Claim 13

Dependent Claim 36 words

The method of manufacturing a semiconductor device as defined by claim 11 , wherein the laser beam is irradiated from a surface opposite to a surface of the semiconductor element on which the electrode is formed.

Claim 14

Independent Claim 125 words

A method of manufacturing a semiconductor device, the method comprising: a first step of forming a first through hole that penetrates the location of the electrode in first and second semiconductor elements each having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of electrically connecting the electrode of the semiconductor element and a conductive member, and fitting the conductive member into the second through hole in the second semiconductor device, and superposing the first and second semiconductor elements, wherein the first through hole extends through the respective first and second semiconductor elements.

Claim 15

Independent Claim 125 words

A method of manufacturing a semiconductor device, the method comprising: a first step of forming a first through hole that penetrates the location of the electrode in first and second semiconductor elements each having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of electrically connecting the electrode of the semiconductor element and a conductive member, and fitting the conductive member into the second through hole in the second semiconductor device, and superposing the first and second semiconductor elements, wherein the first through hole extends through the respective first and second semiconductor elements.

Claim 16

Dependent Claim 43 words

The method of manufacturing a semiconductor device as defined by claim 13 , wherein in the second step, the insulating material is formed to cover a surface of the semiconductor element which is opposite to a surface on which the electrode is formed.

Claim 17

Dependent Claim 61 words

The method of manufacturing a semiconductor device as defined by claim 14 , wherein the insulating material is formed of a resin, wherein a plurality of the semiconductor elements are pasted together by using the resin as an adhesive, and wherein the conductive member and the electrode are electrically connecting by heating the resin to complete hardening contraction of the resin.

Claim 18

Dependent Claim 36 words

The method of manufacturing a semiconductor device as defined by claim 15 , wherein the resin is heated before a plurality of the semiconductor elements are pasted together, to activate the adhesive force of the resin.

Claim 19

Dependent Claim 32 words

The method of manufacturing a semiconductor device as defined by claim 13 , wherein the insulating material is formed of a resin, and wherein the resin is applied in the second step.

Claim 20

Dependent Claim 63 words

The method of manufacturing a semiconductor device as defined by claim 13 , wherein in the second step, the first through hole is filled with the insulating material, and the second through hole having a diameter smaller than a diameter of the first through hole is formed inside the first through hole, in such a manner as to pass through the insulating material.

Claim 21

Dependent Claim 37 words

The method of manufacturing a semiconductor device as defined by claim 13 , wherein the conductive member is a conductive paste, and wherein the second through hole is filled with the conductive paste in the second step.

Claim 22

Dependent Claim 42 words

The method of manufacturing a semiconductor device as defined by claim 13 , wherein the conductive member is a bump, and wherein at least part of the bump engages with the second through hole in the semiconductor element during the third step.

Claim 23

Dependent Claim 24 words

The method of manufacturing a semiconductor device as defined by claim 20 , wherein a plurality of the bumps are provided in a stack.

Claim 24

Dependent Claim 28 words

The method of manufacturing a semiconductor device as defined by claim 20 , wherein after the third step, the bump is melted to fill the second through hole.

Claim 25

Dependent Claim 34 words

The method of manufacturing a semiconductor device as defined by claim 13 , wherein the second through hole is formed with a taper that decreases in dimension towards the electrode of the semiconductor element.

Claim 26

Dependent Claim 35 words

The method of manufacturing a semiconductor device as defined by claim 13 , wherein the second through hole is formed with a taper that decreases in dimension away from the electrode of the semiconductor element.

Claim 27

Dependent Claim 33 words

The method of manufacturing a semiconductor device as defined by claim 13 , wherein at least one of the first through hole or the second through hole is formed by a laser beam.

Claim 28

Dependent Claim 36 words

The method of manufacturing a semiconductor device as defined by claim 25 , wherein the laser beam is irradiated from a surface opposite to a surface of the semiconductor element on which the electrode is formed.

Claim 29

Dependent Claim 18 words

A semiconductor device manufactured by the method of manufacturing a semiconductor device as defined by claim 1 .

Claim 30

Dependent Claim 18 words

A semiconductor device manufactured by the method of manufacturing a semiconductor device as defined by claim 13 .

Claim 31

Dependent Claim 64 words

A semiconductor device comprising: a semiconductor element having an electrode, a through hole being formed at a location of the electrode; insulating material provided in a region including an inside of the through hole; and a conductive member provided in such a manner as to pass along a central axis of the through hole, wherein the first through hole extends through the semiconductor element.

Claim 32

Dependent Claim 64 words

A semiconductor device comprising: a semiconductor element having an electrode, a through hole being formed at a location of the electrode; insulating material provided in a region including an inside of the through hole; and a conductive member provided in such a manner as to pass along a central axis of the through hole, wherein the first through hole extends through the semiconductor element.

Claim 33

Dependent Claim 19 words

The semiconductor device as defined by claim 29 , wherein the through hole is filled with the conductive member.

Claim 34

Dependent Claim 29 words

The semiconductor device as defined by claim 29 , wherein the through hole is formed with a taper that decreases in dimension towards the electrode of the semiconductor element.

Claim 35

Dependent Claim 30 words

The semiconductor device as defined by claim 29 , wherein the through hole is formed with a taper that decreases in dimension away from the electrode of the semiconductor element.

Claim 36

Dependent Claim 43 words

The semiconductor device as defined by claim 29 , wherein the insulating material is provided so as to expose the conductive member and to cover a surface of the semiconductor element which is opposite to a surface on which the electrode is formed.

Claim 37

Dependent Claim 43 words

The semiconductor device as defined by claim 29 , wherein a part of the conductive member protrudes to an outside of the through hole, at a surface of the semiconductor element which is opposite to a surface on which the electrode is formed.

Claim 38

Dependent Claim 34 words

The semiconductor device as defined by claim 29 , wherein a stack of a plurality of the semiconductor devices are provided, and upper and lower semiconductor elements are connected electrically by the conductive member.

Claim 39

Dependent Claim 16 words

A circuit board on which is mounted the semiconductor device as defined by claim 29 .

Claim 40

Dependent Claim 12 words

Electronic equipment having the semiconductor device as defined by claim 29 .

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2006-08-18	2007-02-17	2007-08-19	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2010-08-18	2011-02-17	2011-08-19	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2014-08-18	2015-02-17	2015-08-19	$7700.00	Window Closed / Lapsed

Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment

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