Patent US6602761B2 successfully refreshed from Google Patents.
US6602761B2
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US
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Process for production of SOI substrate and process for production of semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2001-07-19
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Granted: 2003-08-05
•
Expires: 2021-07-19
Abstract
Abstract A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.
Inventors
- 👤 Takeshi Fukunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:05
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0214; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D86/40; H10D86/60; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181; H10F; H10F39/00; H10F39/10; H10F39/12; Y; Y10; Y10S; Y10S438/00; Y10S438/96
Claims Analysis
Total Claims: 68
Claim 1
Independent Claim
154 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.
Claim 2
Independent Claim
154 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.
Claim 3
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 1 , wherein said surface is polished by chemical mechanical polishing.
Claim 4
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 1 , wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.
Claim 5
Dependent Claim
40 words
A method for manufacturing a semiconductor device according to claim 1 , wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.
Claim 6
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 1 , wherein said semiconductor device is an electroluminenscence display unit.
Claim 7
Dependent Claim
20 words
A method for manufacturing a semiconductor device according to claim 1 , wherein said semiconductor device is an integrated circuit.
Claim 8
Dependent Claim
22 words
A method for manufacturing a semiconductor device according to claim 1 , wherein said semiconductor device is a liquid crystal display unit.
Claim 9
Dependent Claim
56 words
A method for manufacturing a semiconductor device according to claim 1 , wherein said semiconductor device is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.
Claim 10
Independent Claim
201 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; removing said porous layer present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; and introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region and a channel region.
Claim 11
Independent Claim
201 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; removing said porous layer present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; and introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region and a channel region.
Claim 12
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 9 , wherein said surface is polished by chemical mechanical polishing.
Claim 13
Dependent Claim
38 words
A method for manufacturing a semiconductor device according to claim 9 , wherein the step of forming said mask is designed to form in a region which becomes afterward said island-like semiconductor layer constituting a thin film transistor.
Claim 14
Dependent Claim
40 words
A method for manufacturing a semiconductor device according to claim 9 , wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.
Claim 15
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 9 , wherein said semiconductor device is an electroluminescence display unit.
Claim 16
Dependent Claim
20 words
A method for manufacturing a semiconductor device according to claim 9 , wherein said semiconductor device is an integrated circuit.
Claim 17
Dependent Claim
22 words
A method for manufacturing a semiconductor device according to claim 9 , wherein said semiconductor device is a liquid crystal display unit.
Claim 18
Dependent Claim
56 words
A method for manufacturing a semiconductor device according to claim 9 , wherein said semiconductor device is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.
Claim 19
Independent Claim
238 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; removing said porous present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region, a lightly doped drain region and a channel region; forming an interlayer insulating film to cover said gate electrode and said island-like semiconductor layer; forming a source wiring and a drain wiring in contact with said source region and said drain region, respectively.
Claim 20
Independent Claim
238 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; removing said porous present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region, a lightly doped drain region and a channel region; forming an interlayer insulating film to cover said gate electrode and said island-like semiconductor layer; forming a source wiring and a drain wiring in contact with said source region and said drain region, respectively.
Claim 21
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 17 , wherein said surface is polished by chemical mechanical polishing.
Claim 22
Dependent Claim
38 words
A method for manufacturing a semiconductor device according to claim 17 , wherein the step of forming said mask is designed to form in a region which becomes afterward said island-like semiconductor layer constituting a thin film transistor.
Claim 23
Dependent Claim
40 words
A method for manufacturing a semiconductor device according to claim 17 , wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.
Claim 24
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 17 , wherein said semiconductor device is an electroluminescence display unit.
Claim 25
Dependent Claim
20 words
A method for manufacturing a semiconductor device according to claim 17 , wherein said semiconductor device is an integrated circuit.
Claim 26
Dependent Claim
22 words
A method for manufacturing a semiconductor device according to claim 17 , wherein said semiconductor device is a liquid crystal display unit.
Claim 27
Dependent Claim
56 words
A method for manufacturing a semiconductor device according to claim 17 , wherein said semiconductor device is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.
Claim 28
Independent Claim
144 words
A method for manufacturing a semiconductor device comprising the steps of: forming a mask on one surface of a single-crystal semiconductor substrate; converting a portion of said one surface into at least one porous layer by using an anodizing treatment, wherein said mask is not formed on said portion; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.
Claim 29
Independent Claim
144 words
A method for manufacturing a semiconductor device comprising the steps of: forming a mask on one surface of a single-crystal semiconductor substrate; converting a portion of said one surface into at least one porous layer by using an anodizing treatment, wherein said mask is not formed on said portion; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.
Claim 30
Dependent Claim
34 words
A method for manufacturing a semiconductor device according to claim 25 , wherein the step of forming said first silicon oxide layer is followed by a step of flattening said first silicon oxide layer.
Claim 31
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 25 , wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.
Claim 32
Dependent Claim
40 words
A method for manufacturing a semiconductor device according to claim 25 , wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.
Claim 33
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 25 , wherein said semiconductor device is an electroluminescence display unit.
Claim 34
Dependent Claim
20 words
A method for manufacturing a semiconductor device according to claim 25 , wherein said semiconductor device is an integrated circuit.
Claim 35
Dependent Claim
22 words
A method for manufacturing a semiconductor device according to claim 25 , wherein said semiconductor device is a liquid crystal display unit.
Claim 36
Dependent Claim
56 words
A method for manufacturing a semiconductor device according to claim 25 , wherein said semiconductor device is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.
Claim 37
Independent Claim
145 words
A method for manufacturing a display device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.
Claim 38
Independent Claim
145 words
A method for manufacturing a display device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.
Claim 39
Dependent Claim
21 words
A method for manufacturing a display device according to claim 33 , wherein said surface is polished by chemical mechanical polishing.
Claim 40
Dependent Claim
37 words
A method for manufacturing a display device according to claim 33 , wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.
Claim 41
Dependent Claim
40 words
A method for manufacturing a semiconductor device according to claim 33 , wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.
Claim 42
Dependent Claim
21 words
A method for manufacturing a display device according to claim 33 , wherein said semiconductor device is an electroluminescence display unit.
Claim 43
Dependent Claim
22 words
A method for manufacturing a semiconductor device according to claim 33 , wherein said semiconductor device is a liquid crystal display unit.
Claim 44
Independent Claim
145 words
A method for manufacturing a personal computer comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.
Claim 45
Independent Claim
145 words
A method for manufacturing a personal computer comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate.
Claim 46
Dependent Claim
21 words
A method for manufacturing a display device according to claim 39 , wherein said surface is polished by chemical mechanical polishing.
Claim 47
Dependent Claim
37 words
A method for manufacturing a personal computer according to claim 39 , wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.
Claim 48
Dependent Claim
40 words
A method for manufacturing a semiconductor device according to claim 39 , wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.
Claim 49
Dependent Claim
21 words
A method for manufacturing a personal computer according to claim 39 , wherein said semiconductor device is an electroluminescence display unit.
Claim 50
Dependent Claim
22 words
A method for manufacturing a personal computer according to claim 39 , wherein said semiconductor device is a liquid crystal display unit.
Claim 51
Independent Claim
142 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; and removing said porous layer present over said supporting substrate.
Claim 52
Independent Claim
142 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; and removing said porous layer present over said supporting substrate.
Claim 53
Independent Claim
189 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; removing said porous layer present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; and introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region and a channel region.
Claim 54
Independent Claim
189 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; removing said porous layer present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; and introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region and a channel region.
Claim 55
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 45 , wherein said surface is polished by chemical mechanical polishing.
Claim 56
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 46 , wherein said surface is polished by chemical mechanical polishing.
Claim 57
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 45 , wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.
Claim 58
Dependent Claim
38 words
A method for manufacturing a semiconductor device according to claim 46 , wherein the step of forming said mask is designed to form in a region which becomes afterward said island-like semiconductor layer constituting a thin film transistor.
Claim 59
Dependent Claim
40 words
A method for manufacturing a semiconductor device according to claim 45 , wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.
Claim 60
Dependent Claim
40 words
A method for manufacturing a semiconductor device according to claim 46 , wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.
Claim 61
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 45 , wherein said semiconductor device is an electroluminenscence display unit.
Claim 62
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 46 , wherein said semiconductor device is an electroluminenscence display unit.
Claim 63
Dependent Claim
20 words
A method for manufacturing a semiconductor device according to claim 45 , wherein said semiconductor device is an integrated circuit.
Claim 64
Dependent Claim
20 words
A method for manufacturing a semiconductor device according to claim 46 , wherein said semiconductor device is an integrated circuit.
Claim 65
Dependent Claim
22 words
A method for manufacturing a semiconductor device according to claim 45 , wherein said semiconductor device is a liquid crystal display unit.
Claim 66
Dependent Claim
22 words
A method for manufacturing a semiconductor device according to claim 46 , wherein said semiconductor device is a liquid crystal display unit.
Claim 67
Dependent Claim
56 words
A method for manufacturing a semiconductor device according to claim 45 , wherein said semiconductor device is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.
Claim 68
Dependent Claim
60 words
A method for manufacturing a semiconductor device according to claim 46 , wherein said semiconductor device is a display unit incorporated in one selected from a group consisting of a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.
References Cited (Backward Citations)
US5371037A
Cited
US5374564A
Cited
US5714395A
Cited
US5985681A
Cited
US6294478B1
Cited
US6020252A
Cited
US5882987A
Cited
US6171982B1
Cited
US6342433B1
Cited
US6331208B1
Cited
US6271101B1
Cited
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