Patent US6583516B2 successfully refreshed from Google Patents.
US6583516B2
Expired / Lapsed
US
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Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
Assignee: Seiko Epson Corp
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Filing: 2001-11-01
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Granted: 2003-06-24
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Expires: 2021-11-01
Abstract
Abstract A semiconductor device comprising: a semiconductor element having a plurality of electrodes; a passivation film formed on the semiconductor element in a region avoiding at least a part of each of the electrodes; a conductive foil provided at a given spacing from the surface on which the passivation film is formed; an external electrodes formed on the conductive foil; intermediate layer formed between the passivation film and the conductive foil to support the conductive foil; and wires electrically connecting the electrodes to the conductive foil; wherein a depression tapered in a direction from the conductive foil to the passivation film if formed under a part of the conductive foil that includes the connection with the external electrodes.
Inventors
- 👤 Nobuaki Hashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:01
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W74/129; H10W90/00; H10W90/701; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/654; H10W70/656; H10W70/67; H10W70/68; H10W72/00; H10W72/01; H10W72/012; H10W72/019; H10W72/20; H10W72/241; H10W72/244; H10W72/251; H10W72/29; H10W72/90; H10W72/921; H10W72/922; H10W72/923; H10W72/931; H10W72/932; H10W72/941; H10W72/944; H10W72/9445; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
141 words
A semiconductor device comprising: a semiconductor element that includes a plurality of electrodes; a passivation film formed on a surface of the semiconductor element in a region avoiding at least a part of each of the electrodes; a metal layer having its first portions electrically connected to the electrodes and having its second portions formed at a given spacing from the surface on which the passivation film is formed; external electrodes formed on the second portions of the metal layer; and an intermediate layer formed between the passivation film and the second portions of the metal layer to support the second portions, wherein a depression opening between one of the second portions to the passivation film is formed in the intermediate layer under a part of one of the second portions that includes the connection with one of the external electrodes.
Claim 2
Dependent Claim
141 words
A semiconductor device comprising: a semiconductor element that includes a plurality of electrodes; a passivation film formed on a surface of the semiconductor element in a region avoiding at least a part of each of the electrodes; a metal layer having its first portions electrically connected to the electrodes and having its second portions formed at a given spacing from the surface on which the passivation film is formed; external electrodes formed on the second portions of the metal layer; and an intermediate layer formed between the passivation film and the second portions of the metal layer to support the second portions, wherein a depression opening between one of the second portions to the passivation film is formed in the intermediate layer under a part of one of the second portions that includes the connection with one of the external electrodes.
Claim 3
Dependent Claim
28 words
The semiconductor device as defined in claim 1 , wherein the depression is filled with a resin having a Young's modulus lower than that of the intermediate layer.
Claim 4
Dependent Claim
45 words
The semiconductor device as defined in claim 2 , wherein the first portions of the metal layer are formed on the surface on which the passivation film is formed, and ends of the second portions are positioned on the upper surface of the intermediate layer.
Claim 5
Dependent Claim
38 words
The semiconductor device as defined in claim 3 , wherein one of the second portions of the metal layer has a hole positioned within an opening edge of the depression and avoiding the connection with the external electrodes.
Claim 6
Dependent Claim
61 words
The semiconductor device as defined in claim 3 , further comprising a substrate with a surface on which the second portions of the metal layer are formed, the surface facing toward the intermediate layer, wherein the substrate has a penetrating hole over the depression; and wherein one of the external electrodes is formed on the metal layer through the penetrating hole.
Claim 7
Dependent Claim
38 words
The semiconductor device as defined in claim 2 , wherein one of the second portions of the metal layer has a hole positioned within an opening edge of the depression and avoiding the connection with the external electrodes.
Claim 8
Dependent Claim
61 words
The semiconductor device as defined in claim 2 , further comprising a substrate with a surface on which the second portions of the metal layer are formed, the surface facing toward the intermediate layer, wherein the substrate has a penetrating hole over the depression; and wherein one of the external electrodes is formed on the metal layer through the penetrating hole.
Claim 9
Dependent Claim
56 words
The semiconductor device as defined in claim 1 , wherein the intermediate layer has a bevel between one of the electrodes and one of the second portions of the metal layer; and wherein the metal layer extends to be formed on the bevel to electrically connect one of the electrodes to one of the external electrodes.
Claim 10
Dependent Claim
38 words
The semiconductor device as defined in claim 8 , wherein one of the second portions of the metal layer has a hole positioned within an opening edge of the depression and avoiding the connection with the external electrodes.
Claim 11
Dependent Claim
61 words
The semiconductor device as defined in claim 8 , further comprising a substrate with a surface on which the second portions of the metal layer are formed, the surface facing toward the intermediate layer, wherein the substrate has a penetrating hole over the depression; and wherein one of the external electrodes is formed on the metal layer through the penetrating hole.
Claim 12
Dependent Claim
19 words
The semiconductor device as defined in claim 1 , wherein the intermediate layer is formed of a flexible material.
Claim 13
Dependent Claim
38 words
The semiconductor device as defined in claim 11 , wherein one of the second portions of the metal layer has a hole positioned within an opening edge of the depression and avoiding the connection with the external electrodes.
Claim 14
Dependent Claim
61 words
The semiconductor device as defined in claim 11 , further comprising a substrate with a surface on which the second portions of the metal layer are formed, the surface facing toward the intermediate layer, wherein the substrate has a penetrating hole over the depression; and wherein one of the external electrodes is formed on the metal layer through the penetrating hole.
Claim 15
Dependent Claim
38 words
The semiconductor device as defined in claim 1 , wherein one of the second portions of the metal layer has a hole positioned within an opening edge of the depression and avoiding the connection with the external electrodes.
Claim 16
Dependent Claim
16 words
A circuit board on which is mounted the semiconductor device as defined in claim 14 .
Claim 17
Dependent Claim
61 words
The semiconductor device as defined in claim 1 , further comprising a substrate with a surface on which the second portions of the metal layer are formed, the surface facing toward the intermediate layer, wherein the substrate has a penetrating hole over the depression; and wherein one of the external electrodes is formed on the metal layer through the penetrating hole.
Claim 18
Dependent Claim
13 words
An electronic instrument having the semiconductor device as defined in claim 11 .
Claim 19
Dependent Claim
16 words
A circuit board on which is mounted the semiconductor device as defined in claim 1 .
Claim 20
Dependent Claim
13 words
An electronic instrument having the semiconductor device as defined in claim 1 .
Claim 21
Independent Claim
114 words
A method of manufacturing a semiconductor device, comprising the steps of: providing a semiconductor element that includes a plurality of electrodes and a passivation film that is formed on a surface of the semiconductor element in a region avoiding at least a part of each of the electrodes; forming an intermediate layer on the passivation film; forming a metal layer having its first portions electrically connected to the electrodes and having its second portions on the intermediate layer; forming a depression opening between one of the second portions to the passivation film in the intermediate layer; forming external electrodes on the second portions of the metal layer in a position above the depression opening.
Claim 22
Independent Claim
114 words
A method of manufacturing a semiconductor device, comprising the steps of: providing a semiconductor element that includes a plurality of electrodes and a passivation film that is formed on a surface of the semiconductor element in a region avoiding at least a part of each of the electrodes; forming an intermediate layer on the passivation film; forming a metal layer having its first portions electrically connected to the electrodes and having its second portions on the intermediate layer; forming a depression opening between one of the second portions to the passivation film in the intermediate layer; forming external electrodes on the second portions of the metal layer in a position above the depression opening.
Claim 23
Dependent Claim
49 words
The method of manufacturing a semiconductor device, as defined in claim 20 , wherein: the step of forming a depression opening further comprises a step of forming a hole in the second portion of the metal layer, and etching the intermediate layer through the hole to form a depression.
Claim 24
Dependent Claim
63 words
The method of manufacturing a semiconductor device as defined in claim 21 , further comprising: before the step of etching the intermediate layer, a step in which the external electrodes are formed on the conductive foil, and on the external electrodes an electrode covering layer is formed of a material which is not readily etched under the etching conditions of the intermediate layer.
Claim 25
Dependent Claim
92 words
The method of manufacturing a semiconductor device as defined in claim 20 , wherein: the passivation film is etched under the etching conditions of the intermediate layer; and on the passivation film, a covering layer is formed of a materal which is not readily etched under the etching conditions of the intermediate layer, the intermediate layer is formed on the covering layer, the conductive foil is formed on the intermediate layer, a hole is formed in the conductive foil, and the intermediate layer is etched through the hole to form the depression.
Claim 26
Dependent Claim
141 words
The method of manufacturing a semiconductor device as defined in claim 20 , wherein: the passivation film is etched under the etching conditions of the intermediate layer; on the passivation film, a first covering layer is formed of a material which is not readily etched under the etching conditions of the intermediate layer; the intermediate layer is formed on the first covering layer; the conductive foil and wires are formed on the intermediate layer, and a hole is formed in the conductive foil; a solder resist layer is formed on the wires; on the solder resist layer, a second covering layer is formed of a material which is not readily etched under the etching conditions of the intermediate layer; and the intermediate layer is etched as far as the underneath of the conductive foil through the hole in the conductive foil.
Claim 27
Dependent Claim
37 words
The method of manufacturing a semiconductor device as defined in claim 20 , further comprising a step in which the depression is filled with a resin having a Young's modulus lower than that of the intermediate layer.
Claim 28
Dependent Claim
42 words
The method of manufacturing a semiconductor device as defined in claim 25 , the step of forming a depression opening further comprising a step of forming a hole in the second portion of the metal in a region avoiding the external electrodes.
Claim 29
Dependent Claim
55 words
The method of manufacturing a semiconductor device as defined in claim 25 , further comprising: attaching a substrate with the surface on which the second portions of the metal layer are formed, the surface facing toward the intermediate layer; wherein one of the external electrodes is formed on the metal layer through the penetrating hole.
Claim 30
Dependent Claim
35 words
The method of manufacturing a semiconductor device as defined in claim 20 , comprising the step of forming a depression opening comprising a step of forming the depression opening in the intermediate layer as concave.
Claim 31
Dependent Claim
62 words
The method of manufacturing a semiconductor device as defined in claim 20 , comprising the step of forming a metal layer further comprising a step of forming the first portion of the metal layer on the surface on which the passivation film is formed, and forming ends of the second portions to be positioned on the upper surface of the intermediate layer.
Claim 32
Dependent Claim
42 words
The method of manufacturing a semiconductor device as defined in claim 29 , the step of forming a depression opening further comprising a step forming a hole in the second portion of the metal layer in a region avoiding the external electrodes.
Claim 33
Dependent Claim
65 words
The method of manufacturing a semiconductor device as defined in claim 29 , further comprising: attaching a substrate with a surface on which the second portions of the metal layer are formed, the surface toward the intermediate layer; wherein the substrate has a penetrating hole over the depression; and wherein one of the external electrodes is formed on the metal layer through the penetrating hole.
Claim 34
Dependent Claim
72 words
The method of manufacturing a semiconductor device as defined in claim 20 , the step of forming intermediate layer further comprising a step of forming the intermediate layer to have a bevel between one of the electrodes and one of the second portions of the metal layer; and forming the metal layer extended to be formed on the bevel to electrically connect one of the electrodes to one of the external electrodes.
Claim 35
Dependent Claim
43 words
The method of manufacturing a semiconductor device as defined in claim 32 , the step of forming a depression opening further comprising a step of forming a hole in the second portion of the metal layer in a region avoiding the external electrodes.
Claim 36
Dependent Claim
66 words
The method of maufacturing a semidconductor device as defined in claim 32 , further comprising: attaching a substrate with a surface on which the second portions of the metal layer are formed, the surface facing toward the intermediate layer; wherein the substrate has a penetrating hole over the depression; and wherein one of the external electrodes is formed on the metal layer through the penetrating hole.
Claim 37
Dependent Claim
25 words
The method of manufacturing a semiconductor device as defined in claim 20 , comprising the step of forming the intermediate layer of a flexible material.
Claim 38
Dependent Claim
43 words
The method of manufacturing a semiconductor device as defined in claim 35 , the step of forming a depression opening further comprising a step of forming a hole in the second portion of the metal layer in a region avoiding the external electrodes.
Claim 39
Dependent Claim
66 words
The method of manufacturing a semiconductor device as defined in claim 35 , further comprising: attaching a substrate with a surface on which the second portions of the metal layer are formed, the surface facing toward the intermediate layer; wherein the substrate has a penetrating hole over the depression; and wherein one of the external electrodes is formed on the metal layer through the penetrating hole.
Claim 40
Dependent Claim
43 words
The method of manufacturing a semiconductor device as defined in claim 20 , the step of forming a depression opening further comprising a step of forming a hole in the second portion of the metal layer in a region avoiding the external electrodes.
Claim 41
Dependent Claim
66 words
The method of manufacturing a semiconductor device as defined in claim 20 , further comprising: attaching a substrate with a surface on which the second portions of the metal layer are formed, the surface facing toward the intermediate layer; wherein the substrate has a penetrating hole over the depression; and wherein one of the external electrodes is formed on the metal layer through the penetrating hole.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-06-23 | 2006-12-23 | 2007-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-06-23 | 2010-12-23 | 2011-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-06-23 | 2014-12-23 | 2015-06-24 | $7700.00 | Window Closed / Lapsed |