Patent US6579767B2 successfully refreshed from Google Patents.
US6579767B2
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Method for forming aluminum oxide as a gate dielectric
Assignee: SK Hynix Inc
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Filing: 2000-12-04
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Granted: 2003-06-17
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Expires: 2020-12-04
Abstract
Abstract A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. A thin SiO 2 layer is thermally grown on top of the semiconductor device by using a wet H 2 /O 2 or a dry O 2 . And then, an aluminum oxide layer is formed on top of the semiconductor substrate with doping a dopant in situ. A conductive layer is formed on top of the Al 2 O 3 layer. Finally, the conductive layer and the Al 2 O 3 layer are patterned into the gate structure. The dopant is a material selected from a group consisting of Si, Zr, Hf, Nb or the like.
Inventors
- 👤 Dae-Gyu Park
- 👤 Se-Aug Jang
- 👤 Jeong-Youb Lee
- 👤 Hung-Jae Cho
- 👤 Jung-Ho Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:14
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01338; H10D64/0134; H10D64/01342; H10D64/681; H10D64/685; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6516; H10P14/6518; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/6929; H10P14/6934; H10P14/6938; H10P14/6939; H10P14/69391; H10P30/00; H10P30/40; H10P32/00; H10P32/20; H10P14/6339
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
79 words
A method for manufacturing a gate structure for use in a semiconductor device, the method comprising: a) preparing a semiconductor substrate provided with an isolation region formed therein; b) forming in situ an aluminum oxide (Al 2 O 3 ) layer on top of the semiconductor substrate using a niobium (Nb) dopant in situ; c) forming a conductive layer on top of the Al 2 O 3 layer; and d) patterning the conductive layer, thereby obtaining the gate structure.
Claim 2
Independent Claim
79 words
A method for manufacturing a gate structure for use in a semiconductor device, the method comprising: a) preparing a semiconductor substrate provided with an isolation region formed therein; b) forming in situ an aluminum oxide (Al 2 O 3 ) layer on top of the semiconductor substrate using a niobium (Nb) dopant in situ; c) forming a conductive layer on top of the Al 2 O 3 layer; and d) patterning the conductive layer, thereby obtaining the gate structure.
Claim 3
Dependent Claim
34 words
The method of claim 1 , between a) and b), further comprising thermally growing a thin silicon dioxide (SiO 2 ) layer at a temperature ranging from approximately 650° C. to approximately 950° C.
Claim 4
Dependent Claim
30 words
The method of claim 2 , wherein said thermal growing of a silicon dioxide layer is carried out by using rapid thermal process (RTP) in the presence of oxygen gas.
Claim 5
Dependent Claim
36 words
The method of claim 1 , wherein b) is carried out by using low pressure chemical vapor deposition (LPCVD) at a temperature ranging from approximately 150° C. to approximately 700° C. in the presence of oxygen.
Claim 6
Dependent Claim
36 words
The method of claim 1 , wherein b) is carried out by using plasma enhanced chemical vapor deposition (PECVD) at a temperature ranging from approximately 150° C. to approximately 700° C. in the presence of oxygen.
Claim 7
Dependent Claim
32 words
The method of claim 1 , wherein b) is carried out by using delta doping, thereby forming a one to two monolayer thickness of dopant into the Al 2 O 3 layer.
Claim 8
Dependent Claim
21 words
The method of claim 6 , wherein the delta doping is carried out by using an atomic layer deposition (ALD) method.
Claim 9
Dependent Claim
28 words
The method of claim 6 , after b), further comprising heat-treating the Al 2 O 3 layer to diffuse the dopant into the Al 2 O 3 layer.
Claim 10
Independent Claim
93 words
A method for manufacturing a gate structure for use in a semiconductor device, the method comprising: a) preparing a semiconductor substrate provided with an isolation region formed therein; b) forming an Al 2 O 3 layer on top of the semiconductor substrate; c) forming a conductive layer on top of the Al 2 O 3 layer; d) implanting at least one dopant into the Al 2 O 3 layer; e) patterning the conductive layer and the Al 2 O 3 layer into the gate structure; and f) reoxidizing the at least one dopant.
Claim 11
Independent Claim
93 words
A method for manufacturing a gate structure for use in a semiconductor device, the method comprising: a) preparing a semiconductor substrate provided with an isolation region formed therein; b) forming an Al 2 O 3 layer on top of the semiconductor substrate; c) forming a conductive layer on top of the Al 2 O 3 layer; d) implanting at least one dopant into the Al 2 O 3 layer; e) patterning the conductive layer and the Al 2 O 3 layer into the gate structure; and f) reoxidizing the at least one dopant.
Claim 12
Dependent Claim
40 words
The method of claim 9 , further comprising, between a) and b), forming a thin SiO 2 layer by rapid thermal process (RTP) annealing at a temperature ranging from approximately 700° C. to approximately 950° C. in an oxygen atmosphere.
Claim 13
Dependent Claim
17 words
The method of claim 9 , after b), further comprising heat-treating the Al 2 O 3 layer.
Claim 14
Dependent Claim
32 words
The method of claim 9 , wherein b) is carried out by using a CVD method at a temperature ranging from 150° C. to approximately 700° C. in the presence of oxygen.
Claim 15
Dependent Claim
24 words
The method of claim 9 , wherein b) is carried out by using an atomic layer deposition (ALD) method in the presence of oxygen.
Claim 16
Dependent Claim
36 words
The method of claim 9 , after b), further comprising heat-treating the Al 2 O 3 layer by using UV ozone (O 3 ) at a temperature ranging from approximately 300° C. to approximately 500° C.
Claim 17
Dependent Claim
47 words
The method of claim 9 , after the step d), further comprising the step of annealing the Al 2 O 3 layer by using a furnace at a temperature ranging from approximately 300° C. to approximately 500° C. in the presence of nitrous oxide (N 2 O).
Claim 18
Dependent Claim
23 words
The method of claim 9 , wherein the dopant is a material selected from the group consisting of Si, Zr, Hf, and Nb.
Claim 19
Dependent Claim
30 words
The method of claim 9 , wherein said reoxidizing at least one dopant in (f) is carried out at a temperature ranging from approximately 700° C. to approximately 850° C.
Claim 20
Dependent Claim
26 words
The method of claim 17 , wherein said reoxidizing at least one dopant in (f) is carried out in the presence of oxygen or nitrous oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-06-16 | 2006-12-16 | 2007-06-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-06-16 | 2010-12-16 | 2011-06-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-06-16 | 2014-12-16 | 2015-06-17 | $7700.00 | Window Closed / Lapsed |