US6569595B1
Expired / Lapsed
US
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Method of forming a pattern
Assignee: Toshiba Corp
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Filing: 2000-02-24
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Granted: 2003-05-27
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Expires: 2020-02-24
Abstract
Abstract A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.
Inventors
- 👤 Yasuhiko Sato
- 👤 Eishi Shiobara
- 👤 Yasunobu Onishi
- 👤 Shuji Hayase
- 👤 Yoshihiko Nakano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:13
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
150 words
A method of forming a pattern, which comprises the steps of: forming a mask material layer on a work film by coating a solution containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formula (CP1), (CP2) or (CP4): wherein o, p and q are each independently a positive integer; forming a resist film on said mask material layer; forming a resist pattern by exposing said resist film to a patterning exposure light and by developing the exposed resist film; forming a mask material pattern by transferring said resist pattern to said mask material film; and forming a work film pattern by transferring said mask material pattern to said work film; wherein a complex index of refraction at a wavelength of said patterning exposure light of said mask material layer is in the range meeting the following relationships: 1.0≦n≦2.5; and 0.05≦k≦1.0.
Claim 2
Independent Claim
150 words
A method of forming a pattern, which comprises the steps of: forming a mask material layer on a work film by coating a solution containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formula (CP1), (CP2) or (CP4): wherein o, p and q are each independently a positive integer; forming a resist film on said mask material layer; forming a resist pattern by exposing said resist film to a patterning exposure light and by developing the exposed resist film; forming a mask material pattern by transferring said resist pattern to said mask material film; and forming a work film pattern by transferring said mask material pattern to said work film; wherein a complex index of refraction at a wavelength of said patterning exposure light of said mask material layer is in the range meeting the following relationships: 1.0≦n≦2.5; and 0.05≦k≦1.0.
Claim 3
Dependent Claim
29 words
A method of forming a pattern according to claim 1 , wherein a film thickness of said mask material layer is in the range of 10 to 5,000 nm.
Claim 4
Dependent Claim
72 words
A method of forming a pattern according to claim 1 , which further comprises the steps of: forming an interlayer on said mask material layer prior to said step of forming a resist film on said mask material layer; and forming an interlayer pattern by transferring said resist pattern to said interlayer prior to said step of forming a mask material pattern by transferring said resist pattern to said mask material film.
Claim 5
Dependent Claim
27 words
The method of forming a pattern according to claim 3 , wherein a film thickness of said interlayer is in the range of 10 to 1,000 nm.
Claim 6
Independent Claim
166 words
A method of forming a pattern which comprises the steps of: forming a mask material layer on a work film provided with an underlying pattern indicating a position information by coating a solution containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formula (CP1), (CP2) or (CP4): wherein o, p and q are each independently a positive integer; forming a resist film on said mask material layer; detecting said position information of the underlying pattern existing right below said resist film; exposing said resist film to a patterning exposure light after correcting a position of an exposure pattern on the basis of a result of detection of said position information; and forming a resist pattern by developing said resist film which has been subjected to said patterning exposure; wherein a birefringence index at a wavelength of said pattern exposure light of said mask material layer is in the range meeting the following relationships: 1.0≦n≦2.5; and 0.05≦k≦1.0.
Claim 7
Independent Claim
166 words
A method of forming a pattern which comprises the steps of: forming a mask material layer on a work film provided with an underlying pattern indicating a position information by coating a solution containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formula (CP1), (CP2) or (CP4): wherein o, p and q are each independently a positive integer; forming a resist film on said mask material layer; detecting said position information of the underlying pattern existing right below said resist film; exposing said resist film to a patterning exposure light after correcting a position of an exposure pattern on the basis of a result of detection of said position information; and forming a resist pattern by developing said resist film which has been subjected to said patterning exposure; wherein a birefringence index at a wavelength of said pattern exposure light of said mask material layer is in the range meeting the following relationships: 1.0≦n≦2.5; and 0.05≦k≦1.0.
Claim 8
Dependent Claim
29 words
A method of forming a pattern according to claim 5 , wherein a film thickness of said mask material layer is in the range of 10 to 5,000 nm.
Claim 9
Dependent Claim
22 words
A method of forming a pattern according to claim 5 , wherein said detection of position information is performed by using light.
Claim 10
Dependent Claim
43 words
A method of forming a pattern according to claim 5 , which further comprises a step of forming an interlayer containing an inorganic atom on said mask material layer prior to said step of forming a resist film on said mask material layer.
Claim 11
Dependent Claim
27 words
The method of forming a pattern according to claim 8 , wherein a film thickness of said interlayer is in the range of 10 to 1,000 nm.
Claim 12
Dependent Claim
22 words
The method of forming a pattern according to claim 8 , wherein said detection of position information is performed by using light.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-05-26 | 2006-11-25 | 2007-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-05-26 | 2010-11-25 | 2011-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-05-26 | 2014-11-25 | 2015-05-27 | $7700.00 | Window Closed / Lapsed |