US5733712A
Expired / Lapsed
US
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Resist pattern forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed
Assignee: Renesas Electronics Corp
•
Filing: 1996-02-16
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Granted: 1998-03-31
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Expires: 2016-02-16
Abstract
Abstract A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.
Inventors
- 👤 Toshihiko Tanaka
- 👤 Shoichi Uchino
- 👤 Naoko Asai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:01
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H; H10; H10P; H10P76/00; Y; Y10; Y10S; Y10S430/00; Y10S430/151
Claims Analysis
Total Claims: 133
Claim 1
Independent Claim
117 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate, said substrate including a transparent film on a body, the transparent film being transparent to exposure light; forming a resist film over the anti-reflective film, the anti-reflective film having a thickness in a direction between the substrate and the resist film; exposing a pattern onto the resist film using the exposure light, to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is formed on the transparent film, and wherein an extinction coefficient of the anti-reflective film for the exposure light varies in a direction of the anti-reflective film thickness.
Claim 2
Dependent Claim
117 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate, said substrate including a transparent film on a body, the transparent film being transparent to exposure light; forming a resist film over the anti-reflective film, the anti-reflective film having a thickness in a direction between the substrate and the resist film; exposing a pattern onto the resist film using the exposure light, to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is formed on the transparent film, and wherein an extinction coefficient of the anti-reflective film for the exposure light varies in a direction of the anti-reflective film thickness.
Claim 3
Dependent Claim
41 words
A resist pattern forming method according to claim 1, wherein the extinction coefficient of the anti-reflective film increases from a side closest to the resist film to a side closest to the substrate, in the direction of the anti-reflective film thickness.
Claim 4
Dependent Claim
29 words
A resist pattern forming method according to claim 1, wherein said substrate has a stepped portion, said anti-reflective film and said resist film being provided over said stepped portion.
Claim 5
Dependent Claim
16 words
A resist pattern forming method according to claim 1, wherein said substrate has an uneven surface.
Claim 6
Dependent Claim
85 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film using an exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film has an extinction coefficient for the exposure light which is greater on a side closest to the substrate than on a side closest to the resist film.
Claim 7
Dependent Claim
85 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film using an exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film has an extinction coefficient for the exposure light which is greater on a side closest to the substrate than on a side closest to the resist film.
Claim 8
Dependent Claim
34 words
A resist pattern forming method according to claim 5, wherein the extinction coefficient of the anti-reflective film continuously increases from the side closest to the resist film toward the side closest to the substrate.
Claim 9
Dependent Claim
51 words
A resist pattern forming method according to claim 6, wherein the anti-reflective film is formed by forming an anti-reflective layer and, prior to forming the resist film, exposing the surface of the anti-reflective layer to a chemical which is a liquid or gas, to diffuse the chemical into the anti-reflective layer.
Claim 10
Dependent Claim
25 words
A resist pattern forming method according to claim 7, wherein a material of the anti-reflective film contains a nitrone compound and the chemical contains HCl.
Claim 11
Dependent Claim
41 words
A resist pattern forming method according to claim 5, wherein the anti-reflective film has a photoabsorption gradient in a direction from the side closest to the resist film to the side closest to the substrate, the photoabsorption increasing in said direction.
Claim 12
Dependent Claim
41 words
A resist pattern forming method according to claim 5, wherein the anti-reflective film has a photoabsorption gradient in a thickness direction thereof, and is formed of a mixing layer that is formed when a resist is applied over the anti-reflective film.
Claim 13
Dependent Claim
47 words
A resist pattern forming method according to claim 5, wherein the anti-reflective film has a photoabsorption gradient in a thickness direction thereof, is formed by a chemical vapor deposition (CVD) method, and the photoabsorption gradient is produced by changing film-forming conditions during formation of the anti-reflective film.
Claim 14
Dependent Claim
45 words
A resist pattern forming method according to claim 11, wherein the film formed by the CVD method is an SiO x N y H z film, and the photoabsorption gradient is produced by changing the composition of the film by changing x, y and z.
Claim 15
Dependent Claim
50 words
A resist pattern forming method according to claim 5, wherein the anti-reflective film has a photoabsorption gradient in a thickness direction thereof, is formed by a sputtering method, and the photoabsorption gradient is produced by changing a composition of an atmosphere in which the sputtering method is performed, during sputtering.
Claim 16
Dependent Claim
62 words
A resist pattern forming method according to claim 5, wherein the anti-reflective film has a photoabsorption gradient in a thickness direction thereof, is formed by a sputtering method, with silicon as a target in an atmosphere of a gas mixture of Ar and N 2 , and the photoabsorption gradient is produced by changing the volume of N 2 gas during sputtering.
Claim 17
Dependent Claim
119 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is formed of a material containing a photoabsorptive compound that can be evaporated from a surface of the anti-reflective film by heat treatment, and wherein the anti-reflective film, after being formed over the substrate, is heat-treated so that an extinction coefficient of the anti-reflective film increases from a side of the anti-reflective film closest to the resist film toward a side closest to the substrate.
Claim 18
Dependent Claim
119 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is formed of a material containing a photoabsorptive compound that can be evaporated from a surface of the anti-reflective film by heat treatment, and wherein the anti-reflective film, after being formed over the substrate, is heat-treated so that an extinction coefficient of the anti-reflective film increases from a side of the anti-reflective film closest to the resist film toward a side closest to the substrate.
Claim 19
Dependent Claim
45 words
A resist pattern forming method according to claim 15, wherein the heat treatment is performed so that the extinction coefficient continuously increases from the side of the anti-reflective film closest to the resist film to the side of the anti-reflective film closest to the substrate.
Claim 20
Dependent Claim
17 words
A resist pattern forming method according to claim 15, wherein the photoabsorptive compound is an anthracene derivative.
Claim 21
Dependent Claim
162 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film using a pattern exposure light, to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein forming the anti-reflective film comprises: depositing over the substrate a layer of a material which has an ability to absorb the pattern exposure light, whose photoabsorption level for the pattern exposure light lowers when it is irradiated with a photoabsorption modulation light, and which also has an ability to absorb the photoabsorption modulation light; and thereafter, radiating onto an upper surface of the layer the photoabsorption modulation light, so as to form an irradiated layer, so that an extinction coefficient of the irradiated layer for the pattern exposure light is smaller at the upper surface of the irradiated layer than at a deeper part of the irradiated layer.
Claim 22
Dependent Claim
162 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film using a pattern exposure light, to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein forming the anti-reflective film comprises: depositing over the substrate a layer of a material which has an ability to absorb the pattern exposure light, whose photoabsorption level for the pattern exposure light lowers when it is irradiated with a photoabsorption modulation light, and which also has an ability to absorb the photoabsorption modulation light; and thereafter, radiating onto an upper surface of the layer the photoabsorption modulation light, so as to form an irradiated layer, so that an extinction coefficient of the irradiated layer for the pattern exposure light is smaller at the upper surface of the irradiated layer than at a deeper part of the irradiated layer.
Claim 23
Dependent Claim
21 words
A resist pattern forming method according to claim 18, wherein intensity of the photoabsorption modulation light is uniform over a plane.
Claim 24
Dependent Claim
47 words
A resist pattern forming method according to claim 18, wherein the material contains a photoabsorptive compound for the pattern exposure light, and the photoabsorptive compound has a property that its extinction coefficient for the pattern exposure light decreases as it is irradiated with the photoabsorption modulation light.
Claim 25
Dependent Claim
17 words
A resist pattern forming method according to claim 20, wherein the photoabsorptive compound is a nitrone compound.
Claim 26
Dependent Claim
163 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film, using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the forming the anti-reflective film comprises: depositing over the substrate a layer of material which has an ability to absorb the pattern exposure light, whose photoabsorption level for the pattern exposure light lowers when it is irradiated with photoabsorption modulation light, and which also has an ability to absorb the photoabsorption modulation light; radiating onto an upper surface of the layer the photoabsorption modulation light; and fixing the layer so as to provide the anti-reflective film, by exposing the layer to a gas or liquid so as to form a film whose photoabsorption characteristic does not change even when it is irradiated with the pattern exposure light.
Claim 27
Dependent Claim
163 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film, using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the forming the anti-reflective film comprises: depositing over the substrate a layer of material which has an ability to absorb the pattern exposure light, whose photoabsorption level for the pattern exposure light lowers when it is irradiated with photoabsorption modulation light, and which also has an ability to absorb the photoabsorption modulation light; radiating onto an upper surface of the layer the photoabsorption modulation light; and fixing the layer so as to provide the anti-reflective film, by exposing the layer to a gas or liquid so as to form a film whose photoabsorption characteristic does not change even when it is irradiated with the pattern exposure light.
Claim 28
Dependent Claim
31 words
A resist pattern forming method according to claim 22, wherein the photoabsorption modulation light radiated onto an upper surface of the layer has an intensity that is uniform over a plane.
Claim 29
Dependent Claim
82 words
A resist pattern forming method, comprising the steps of: forming a film containing a nitrone compound over a substrate; radiating photoabsorption modulation light onto the film containing the nitrone compound; putting the film containing the nitrone compound in an atmosphere of HCl gas, to form a treated film; forming a resist film over the treated film; exposing a pattern onto the resist film using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film.
Claim 30
Dependent Claim
82 words
A resist pattern forming method, comprising the steps of: forming a film containing a nitrone compound over a substrate; radiating photoabsorption modulation light onto the film containing the nitrone compound; putting the film containing the nitrone compound in an atmosphere of HCl gas, to form a treated film; forming a resist film over the treated film; exposing a pattern onto the resist film using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film.
Claim 31
Dependent Claim
31 words
A resist pattern forming method according to claim 24, wherein the film containing the nitrone compound is put in the atmosphere of HCl gas after said radiating the photoabsorption modulation light.
Claim 32
Dependent Claim
78 words
A resist pattern forming method, comprising the steps of: forming over a substrate a film containing a diazonium salt and phenol; radiating photoabsorption modulation light onto the film; putting the film in the atmosphere of alkali vapor, so as to form a treated film; forming a resist film over the treated film; exposing a pattern onto the resist film using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film.
Claim 33
Dependent Claim
78 words
A resist pattern forming method, comprising the steps of: forming over a substrate a film containing a diazonium salt and phenol; radiating photoabsorption modulation light onto the film; putting the film in the atmosphere of alkali vapor, so as to form a treated film; forming a resist film over the treated film; exposing a pattern onto the resist film using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film.
Claim 34
Dependent Claim
33 words
A resist pattern forming method according to claim 26, wherein the film containing the diazonium salt and phenol is put in the atmosphere of alkali vapor after said radiating the photoabsorption modulation light.
Claim 35
Dependent Claim
157 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film, using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is formed by depositing over the substrate a layer, which has a property of absorbing photoabsorption modulation light together with the pattern exposure light, and also has a property that the ability to absorb the pattern exposure light lowers when heat-treated after being irradiated with the photoabsorption modulation light; then irradiating the layer from its upper surface with the photoabsorption modulation light; and then heat-treating the layer to produce the anti-reflective film, whose extinction coefficient for the pattern exposure light is smaller at the upper surface of the anti-reflective film than at a deep part of the film.
Claim 36
Dependent Claim
157 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film, using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is formed by depositing over the substrate a layer, which has a property of absorbing photoabsorption modulation light together with the pattern exposure light, and also has a property that the ability to absorb the pattern exposure light lowers when heat-treated after being irradiated with the photoabsorption modulation light; then irradiating the layer from its upper surface with the photoabsorption modulation light; and then heat-treating the layer to produce the anti-reflective film, whose extinction coefficient for the pattern exposure light is smaller at the upper surface of the anti-reflective film than at a deep part of the film.
Claim 37
Dependent Claim
25 words
A resist pattern forming method according to claim 28, wherein the layer is irradiated with photoabsorption modulation light whose intensity is uniform in a plane.
Claim 38
Dependent Claim
16 words
A resist pattern forming method according to claim 28, wherein the anti-reflective film contains aromatic azide.
Claim 39
Dependent Claim
120 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate, said substrate including a transparent film on a body, the transparent film being transparent to pattern exposure light; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is formed on the transparent film, and wherein the anti-reflective film is formed of two layers by successively stacking a first layer and then a second layer, and an extinction coefficient for the first layer for the pattern exposure light is greater than that of the second layer.
Claim 40
Dependent Claim
120 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate, said substrate including a transparent film on a body, the transparent film being transparent to pattern exposure light; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is formed on the transparent film, and wherein the anti-reflective film is formed of two layers by successively stacking a first layer and then a second layer, and an extinction coefficient for the first layer for the pattern exposure light is greater than that of the second layer.
Claim 41
Dependent Claim
40 words
A resist pattern forming method according to claim 31, wherein the first and second layers are formed by a chemical vapor deposition method, and the extinction coefficients of the first and second layers are changed by changing the film-forming conditions.
Claim 42
Dependent Claim
59 words
A resist pattern forming method according to claim 32, wherein the layers formed by the chemical vapor deposition method are each made of SiO x N y H z , and the extinction coefficients of the first and second layers are changed by changing the composition of the layers, by changing at least one of x, y and z.
Claim 43
Dependent Claim
42 words
A resist pattern forming method according to claim 33, wherein the first and second layers are formed by sputtering, and the extinction coefficients of the first and second layers are changed by changing the composition of the sputtering atmosphere during the sputtering.
Claim 44
Dependent Claim
58 words
A resist pattern forming method according to claim 34, wherein the first and second layers are formed by sputtering with silicon as a target in an atmosphere of a gas mixture of Ar and N 2 , and the extinction coefficients of the first and second layers are changed by changing an amount of N 2 gas supplied.
Claim 45
Dependent Claim
71 words
A resist pattern forming method according to claim 35, wherein with respect to a KrF excimer laser beam the first layer has a refractive index n 1 (real part) of 2.3 and the extinction coefficient k 1 (imaginary part of refractive index) of 2.8, and the second layer has a refractive index n 2 (real part) of 2.3 and the extinction coefficient k 2 (imaginary part of refractive index) of 0.6.
Claim 46
Dependent Claim
38 words
A resist pattern forming method according to claim 31, wherein the extinction coefficient (imaginary part of refractive index) of the first layer, for an exposure light for exposing a pattern onto the resist film, is 2 or greater.
Claim 47
Dependent Claim
72 words
A resist pattern forming method according to claim 35, wherein with respect to i line radiation (wavelength 365 nm) the first layer has a refractive index n 1 (real part) of 4.6 and the extinction coefficient k 1 (imaginary part of refractive index) of 2.7, and the second layer has a refractive index n 2 (real part) of 2.8 and the extinction coefficient k 2 (imaginary part of refractive index) of 0.4.
Claim 48
Dependent Claim
109 words
A resist pattern forming method, comprising the steps of: forming over a substrate a first film that constitutes an anti-reflective film; forming a resist film over the first film; exposing a pattern onto the resist film using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the first film constituting the anti-reflective film is formed of a plurality of layers, a lowermost layer of the first film is a film that reflects the pattern exposure light, and a second layer on the lowermost layer is an interference anti-reflection film for the pattern exposure light.
Claim 49
Dependent Claim
109 words
A resist pattern forming method, comprising the steps of: forming over a substrate a first film that constitutes an anti-reflective film; forming a resist film over the first film; exposing a pattern onto the resist film using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the first film constituting the anti-reflective film is formed of a plurality of layers, a lowermost layer of the first film is a film that reflects the pattern exposure light, and a second layer on the lowermost layer is an interference anti-reflection film for the pattern exposure light.
Claim 50
Dependent Claim
17 words
A resist pattern forming method according to claim 39, wherein the lowermost layer is a metal film.
Claim 51
Dependent Claim
30 words
A resist pattern forming method according to claim 39, wherein the lowermost layer is formed of a material selected from the group consisting of Al, W, Ti, Si and Pt.
Claim 52
Dependent Claim
29 words
A resist pattern forming method according to claim 39, wherein the interference anti-reflection film has a smaller extinction coefficient for the exposure light than that of the lowermost layer.
Claim 53
Dependent Claim
53 words
A resist pattern forming method according to claim 42, wherein the lowermost layer and the interference anti-reflection film are SiO x N y H z films formed by a CVD method, and extinction coefficients of these films are changed by changing their composition by changing at least one of x, y and z.
Claim 54
Dependent Claim
53 words
A resist pattern forming method according to claim 39, wherein the interference anti-reflection film is a film formed by sputtering, and the extinction coefficient of the interference antireflection film for the pattern exposure light is made smaller than that of the lowermost layer by changing a composition of the gas atmosphere during sputtering.
Claim 55
Dependent Claim
51 words
A resist pattern forming method according to claim 44, wherein the sputtering is performed with Si as a target in an atmosphere of a gas mixture of inert gas and N 2 , and an extinction coefficient of the first film is changed by changing amount of N 2 gas supplied.
Claim 56
Dependent Claim
24 words
A resist pattern forming method according to claim 39, wherein an uppermost film making up the substrate is transparent to the pattern exposure light.
Claim 57
Dependent Claim
16 words
A resist pattern forming method according to claim 39, wherein the substrate has an uneven surface.
Claim 58
Dependent Claim
140 words
A resist pattern forming method, comprising the steps of: forming over a substrate a first film that constitutes an anti-reflective film, said substrate including a transparent film on a body, the transparent film being transparent to pattern exposure light; forming a resist film over the first film; exposing a desired pattern onto the resist film through use of the pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the first film is formed over the transparent film, and wherein the first film constituting the anti-reflective film is a two-layer film of a second layer stacked on a first layer, the first layer absorbing more pattern exposure light than does the second layer, and the second layer being an interference anti-reflection film for the pattern exposure light.
Claim 59
Dependent Claim
140 words
A resist pattern forming method, comprising the steps of: forming over a substrate a first film that constitutes an anti-reflective film, said substrate including a transparent film on a body, the transparent film being transparent to pattern exposure light; forming a resist film over the first film; exposing a desired pattern onto the resist film through use of the pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the first film is formed over the transparent film, and wherein the first film constituting the anti-reflective film is a two-layer film of a second layer stacked on a first layer, the first layer absorbing more pattern exposure light than does the second layer, and the second layer being an interference anti-reflection film for the pattern exposure light.
Claim 60
Dependent Claim
104 words
A resist pattern forming method, comprising the steps of: forming over a substrate a first film that constitutes an anti-reflective film; forming a resist film over the first film; exposing a pattern onto the resist film using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the first film constituting the anti-reflective film is a two-layer film formed by successively stacking a first layer and a second layer, the first layer is a layer that reflects the pattern exposure light and the second layer is an interference anti-reflection layer.
Claim 61
Dependent Claim
104 words
A resist pattern forming method, comprising the steps of: forming over a substrate a first film that constitutes an anti-reflective film; forming a resist film over the first film; exposing a pattern onto the resist film using a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the first film constituting the anti-reflective film is a two-layer film formed by successively stacking a first layer and a second layer, the first layer is a layer that reflects the pattern exposure light and the second layer is an interference anti-reflection layer.
Claim 62
Dependent Claim
17 words
A resist pattern forming method according to claim 49, wherein the first layer is a metal film.
Claim 63
Dependent Claim
30 words
A resist pattern forming method according to claim 49, wherein the first layer is formed of a material selected from the group consisting of Al, W, Ti, Si and Pt.
Claim 64
Dependent Claim
36 words
A resist pattern forming method according to claim 49, wherein refractive index and extinction coefficient of the first layer are about 2.3 and 2.8, and those of the second layer are about 2.3 and 0.6, respectively.
Claim 65
Dependent Claim
26 words
A resist pattern forming method according to claim 52, wherein a thickness of the second layer is in a range between 0.017 μm and 0.039 μm.
Claim 66
Dependent Claim
37 words
A resist pattern forming method according to claim 49, wherein refractive index and extinction coefficient of the first layer are about 2.2 and 1.8, respectively, and those of the second layer are about 2.1 and 0.7, respectively.
Claim 67
Dependent Claim
33 words
A resist pattern forming method according to claim 49, wherein the first layer is an aluminum film, and refractive index and extinction coefficient of the second layer are about 2.48 and 0.9, respectively.
Claim 68
Dependent Claim
33 words
A resist pattern forming method according to claim 49, wherein the first layer is an aluminum film, and refractive index and extinction coefficient of the second layer are about 2.13 and 0.8, respectively.
Claim 69
Dependent Claim
25 words
A resist pattern forming method according to claim 56, wherein refractive index and extinction coefficient of the aluminum film are about 0.19 and 2.94, respectively.
Claim 70
Dependent Claim
25 words
A resist pattern forming method according to claim 55, wherein refractive index and extinction coefficient of the aluminum film are about 0.19 and 2.94, respectively.
Claim 71
Dependent Claim
21 words
A resist pattern forming method according to claim 56, wherein a thickness of the aluminum film is at least 0.04 μm.
Claim 72
Dependent Claim
33 words
A resist pattern forming method according to claim 49, wherein the first layer is a tungsten film, and refractive index and extinction coefficient of the second layer are about 2.3 and 0.6, respectively.
Claim 73
Dependent Claim
33 words
A resist pattern forming method according to claim 49, wherein the first layer is a tungsten film, and refractive index and extinction coefficient of the second layer are about 2.08 and 0.6, respectively.
Claim 74
Dependent Claim
25 words
A resist pattern forming method according to claim 61, wherein refractive index and extinction coefficient of the tungsten film are about 3.4 and 2.85, respectively.
Claim 75
Dependent Claim
21 words
A resist pattern forming method according to claim 61, wherein a thickness of the tungsten film is at least 0.02 μm.
Claim 76
Dependent Claim
25 words
A resist pattern forming method according to claim 60, wherein refractive index and extinction coefficient of the tungsten film are about 3.4 and 2.85, respectively.
Claim 77
Dependent Claim
21 words
A resist pattern forming method according to claim 60, wherein a thickness of the tungsten film is at least 0.02 μm.
Claim 78
Dependent Claim
24 words
A resist pattern forming method according to claim 49, wherein an uppermost film making up the substrate is transparent to the pattern exposure light.
Claim 79
Dependent Claim
19 words
A resist pattern forming method according to claim 49, wherein the interference anti-reflection layer absorbs the pattern exposure light.
Claim 80
Dependent Claim
35 words
A resist pattern forming method according to claim 49, wherein the substrate has steps, and wherein the first film and the resist film are provided over the steps and over other portions of the substrate.
Claim 81
Dependent Claim
62 words
A resist pattern forming method, comprising the steps of: applying a resist to a substrate; exposing a pattern onto the resist, so as to form an exposed resist; and developing the exposed resist to form a desired resist pattern; wherein the resist is a chemically amplified resist using acid catalyst reaction, and a sputtered film containing silicon is formed over the substrate.
Claim 82
Dependent Claim
62 words
A resist pattern forming method, comprising the steps of: applying a resist to a substrate; exposing a pattern onto the resist, so as to form an exposed resist; and developing the exposed resist to form a desired resist pattern; wherein the resist is a chemically amplified resist using acid catalyst reaction, and a sputtered film containing silicon is formed over the substrate.
Claim 83
Dependent Claim
37 words
A resist pattern forming method according to claim 69, wherein the sputtered film is formed prior to applying the resist to the substrate, such that the sputtered film is formed between the substrate and the resist film.
Claim 84
Dependent Claim
98 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film, so as to form an exposed resist film, a surface part of the anti-reflective film also being exposed to light during the exposing; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is made of a material whose extinction coefficient for of exposure light, for forming the exposed resist film, becomes small as it is exposed to light during the exposing.
Claim 85
Dependent Claim
98 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film, so as to form an exposed resist film, a surface part of the anti-reflective film also being exposed to light during the exposing; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is made of a material whose extinction coefficient for of exposure light, for forming the exposed resist film, becomes small as it is exposed to light during the exposing.
Claim 86
Independent Claim
157 words
A method of etching an object film, which processes the object film including at least one layer of metal film or metal-containing film into a first geometry, comprising the steps of: forming over the object film a same metal film or metal-containing film as that included in the object film; forming a second film over said same metal film or metal-containing film; forming a resist film over the second film; exposing a pattern onto the resist film, using a pattern exposure light; developing the resist film, so as to form a developed resist film; with the developed resist film as a mask, etching the second film and said same metal film or metal-containing film; etching the object film until the metal film or metal-containing film in the object film is exposed; removing the resist; and after removing the resist, further etching the object film; wherein the second film is an interference film for the pattern exposure light.
Claim 87
Independent Claim
157 words
A method of etching an object film, which processes the object film including at least one layer of metal film or metal-containing film into a first geometry, comprising the steps of: forming over the object film a same metal film or metal-containing film as that included in the object film; forming a second film over said same metal film or metal-containing film; forming a resist film over the second film; exposing a pattern onto the resist film, using a pattern exposure light; developing the resist film, so as to form a developed resist film; with the developed resist film as a mask, etching the second film and said same metal film or metal-containing film; etching the object film until the metal film or metal-containing film in the object film is exposed; removing the resist; and after removing the resist, further etching the object film; wherein the second film is an interference film for the pattern exposure light.
Claim 88
Dependent Claim
29 words
A method of etching an object film according to claim 72, wherein, in said further etching the object film, said same metal film or metal-containing film is also etched.
Claim 89
Dependent Claim
40 words
A method of etching an object film according to claim 72, wherein the same metal film or metal-containing film is made of a material selected from the group consisting of A1, W, Ti, Ta, Pt, tungsten silicide, and titanium silicide.
Claim 90
Dependent Claim
28 words
A method of etching an object film according to claim 72, wherein the second film is an SiN x film or SiO x N y H z film.
Claim 91
Dependent Claim
19 words
A method of etching an object film according to claim 72, wherein said object film has an uneven surface.
Claim 92
Dependent Claim
32 words
A method of etching an object film according to claim 72, wherein said object film has a stepped surface, and the second film and resist film are formed over the stepped surface.
Claim 93
Independent Claim
109 words
A method of etching a substrate, comprising the steps of: providing an anti-reflective film over a substrate to be etched, said substrate including a conductive layer, the conductive layer being provided on an insulating film; forming a resist film overlying the anti-reflective film; exposing a pattern onto the resist film, so as to form an exposed resist film; developing the exposed resist film, so as to form a resist pattern; etching the anti-reflective film using the resist pattern as a mask; removing the resist pattern; and after removing the resist pattern, etching the substrate with an etchant, both the anti-reflective film and the substrate being etched by said etchant.
Claim 94
Independent Claim
109 words
A method of etching a substrate, comprising the steps of: providing an anti-reflective film over a substrate to be etched, said substrate including a conductive layer, the conductive layer being provided on an insulating film; forming a resist film overlying the anti-reflective film; exposing a pattern onto the resist film, so as to form an exposed resist film; developing the exposed resist film, so as to form a resist pattern; etching the anti-reflective film using the resist pattern as a mask; removing the resist pattern; and after removing the resist pattern, etching the substrate with an etchant, both the anti-reflective film and the substrate being etched by said etchant.
Claim 95
Dependent Claim
42 words
A method of etching a substrate according to claim 78, wherein the anti-reflective film is a silicon nitride film, and the substrate is at least one film of a material selected from the group consisting of polysilicon, a silicide and a polycide.
Claim 96
Dependent Claim
38 words
A method of etching a substrate according to claim 78, wherein the anti-reflective film has an extinction coefficient for exposure light for exposing the resist film, that is not uniform in a thickness direction of the anti-reflective film.
Claim 97
Dependent Claim
35 words
A method of etching a substrate according to claim 78, wherein the anti-reflective film is made of a material having a substantially same etching rate in said etchant as that of material of said substrate.
Claim 98
Dependent Claim
42 words
A method of etching a substrate according to claim 78, wherein the anti-reflective film has an extinction coefficient for exposure light, for exposing the pattern onto the resist film, that is not uniform in a direction of thickness of the anti-reflective film.
Claim 99
Dependent Claim
36 words
A method of etching a substrate according to claim 82, wherein the extinction coefficient of the anti-reflective film is greater at a side closest to the substrate than at a side closest to the resist film.
Claim 100
Dependent Claim
58 words
A method of etching a substrate according to claim 78, wherein the anti-reflective film is a two-layer film of a first layer closest to the substrate and a second layer on the first layer, the first layer being a layer that reflects pattern exposure light used for the exposing, and the second layer being an interference anti-reflection layer.
Claim 101
Dependent Claim
20 words
A method of etching a substrate according to claim 84, wherein the interference anti-reflection layer absorbs the pattern exposure light.
Claim 102
Dependent Claim
65 words
A method of etching a substrate according to claim 78, wherein the anti-reflective film is a two-layer film of a first layer closest to the substrate and a second layer on the first layer, the second layer being an interference anti-reflective layer, and the first layer having a greater extinction coefficient for pattern exposure light, used for said exposing, than that of the second layer.
Claim 103
Independent Claim
119 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a conductive film overlying an insulating film on a semiconductor substrate; forming an anti-reflective film over said conductive film; forming a resist film over the anti-reflective film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the anti-reflective film is a two-layer film of a first layer closest to the substrate and a second layer on the first layer, the first layer being a layer that reflects the exposure light and the second layer being an interference anti-reflection layer.
Claim 104
Independent Claim
119 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a conductive film overlying an insulating film on a semiconductor substrate; forming an anti-reflective film over said conductive film; forming a resist film over the anti-reflective film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the anti-reflective film is a two-layer film of a first layer closest to the substrate and a second layer on the first layer, the first layer being a layer that reflects the exposure light and the second layer being an interference anti-reflection layer.
Claim 105
Dependent Claim
25 words
A method of manufacturing a semiconductor device according to claim 87, wherein the pattern is a pattern for forming word lines of the semiconductor device.
Claim 106
Dependent Claim
19 words
A method of manufacturing a semiconductor device according to claim 87, wherein the conductive film has an uneven surface.
Claim 107
Dependent Claim
28 words
A method of manufacturing a semiconductor device according to claim 87, wherein the conductive film has stepped portions, the anti-reflective film and resist film overlying the stepped portions.
Claim 108
Dependent Claim
63 words
A method of manufacturing a semiconductor device according to claim 87, including a further step, after developing the resist film, so as to provide a developed resist film, of using the developed resist film as a mask in selectively removing the anti-reflective film, leaving an anti-reflective film portion, the anti-reflective film portion being used as a mask in selectively removing the conductive film.
Claim 109
Dependent Claim
65 words
A method of manufacturing a semiconductor device according to claim 91, wherein the conductive film is selectively removed by etching, using an etchant; wherein the developed resist film is removed prior to etching the conductive film, and wherein material of the anti-reflective film is etched by said etchant, whereby during selective removal of the conductive film by etching the anti-reflective film portion is also removed.
Claim 110
Dependent Claim
43 words
A method of manufacturing a semiconductor device according to claim 87, wherein the anti-reflective film has an extinction coefficient for exposure light, for exposing the pattern onto the resist film, that is not uniform in a direction of thickness of the anti-reflective film.
Claim 111
Dependent Claim
37 words
A method of manufacturing a semiconductor device according to claim 93, wherein the extinction coefficient of the anti-reflective film is greater at a side closest to the substrate than at a side closest to the resist film.
Claim 112
Dependent Claim
59 words
A method of manufacturing a semiconductor device according to claim 87, wherein the anti-reflective film is a two-layer film of a first layer closest to the substrate and a second layer on the first layer, the first layer being a layer that reflects pattern exposure light used for the exposing, and the second layer being an interference anti-reflection layer.
Claim 113
Dependent Claim
21 words
A method of manufacturing a semiconductor device according to claim 95, wherein the interference anti-reflection layer absorbs the pattern exposure light.
Claim 114
Dependent Claim
66 words
A method of manufacturing a semiconductor device according to claim 87, wherein the anti-reflective film is a two-layer film of a first layer closest to the substrate and a second layer on the first layer, the second layer being an interference anti-reflective layer, and the first layer having a greater extinction coefficient for pattern exposure light, used for said exposing, than that of the second layer.
Claim 115
Dependent Claim
107 words
An interconnect forming method, comprising the steps of: forming a silicon oxide film over a conductive film; depositing silicon over the silicon oxide film to a thickness of at least 0.025 μm by sputtering, to form a silicon film; depositing an SiNx film over the silicon film by sputtering; applying a resist over the SiNx film; exposing and developing the resist to form a resist pattern; etching the SiNx, silicon and silicon oxide films with the resist pattern used as a mask, thereby forming a silicon oxide film pattern; removing the resist pattern; and etching the conductive film with the silicon oxide film pattern as a mask.
Claim 116
Dependent Claim
107 words
An interconnect forming method, comprising the steps of: forming a silicon oxide film over a conductive film; depositing silicon over the silicon oxide film to a thickness of at least 0.025 μm by sputtering, to form a silicon film; depositing an SiNx film over the silicon film by sputtering; applying a resist over the SiNx film; exposing and developing the resist to form a resist pattern; etching the SiNx, silicon and silicon oxide films with the resist pattern used as a mask, thereby forming a silicon oxide film pattern; removing the resist pattern; and etching the conductive film with the silicon oxide film pattern as a mask.
Claim 117
Dependent Claim
31 words
An interconnect forming method according to claim 98, wherein the conductive film is selected from the group consisting of a polysilicon film, a tungsten silicide film and a tungsten polycide film.
Claim 118
Dependent Claim
50 words
An anti-reflective film used for lithography and formed between a substrate and a resist film to absorb pattern exposure light, the anti-reflective film having an extinction coefficient for the exposure light which is greater on a side closest to the substrate than on a side closest to the resist film.
Claim 119
Dependent Claim
50 words
An anti-reflective film used for lithography and formed between a substrate and a resist film to absorb pattern exposure light, the anti-reflective film having an extinction coefficient for the exposure light which is greater on a side closest to the substrate than on a side closest to the resist film.
Claim 120
Dependent Claim
35 words
An anti-reflective film used for lithography according to claim 100, wherein the extinction coefficient of the anti-reflective film continuously increases from the side closest to the resist film toward the side closest to the substrate.
Claim 121
Dependent Claim
47 words
An anti-reflective film used for lithography, formed between a substrate and a resist to absorb pattern exposure light, the anti-reflective film being made of a material having an extinction coefficient for the pattern exposure light which becomes small as it is exposed to the pattern exposure light.
Claim 122
Dependent Claim
47 words
An anti-reflective film used for lithography, formed between a substrate and a resist to absorb pattern exposure light, the anti-reflective film being made of a material having an extinction coefficient for the pattern exposure light which becomes small as it is exposed to the pattern exposure light.
Claim 123
Dependent Claim
8 words
Product formed by the method of claim 5.
Claim 124
Dependent Claim
8 words
Product formed by the method of claim 39.
Claim 125
Dependent Claim
8 words
Product formed by the method of claim 48.
Claim 126
Dependent Claim
106 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is formed of two layers by successively stacking a first layer and then a second layer, and an extinction coefficient of the first layer for the pattern exposure light is not smaller than 1.8 and an extinction coefficient of the second layer for the pattern exposure light is not greater than 0.9.
Claim 127
Dependent Claim
106 words
A resist pattern forming method, comprising the steps of: forming an anti-reflective film over a substrate; forming a resist film over the anti-reflective film; exposing a pattern onto the resist film, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the anti-reflective film is formed of two layers by successively stacking a first layer and then a second layer, and an extinction coefficient of the first layer for the pattern exposure light is not smaller than 1.8 and an extinction coefficient of the second layer for the pattern exposure light is not greater than 0.9.
Claim 128
Dependent Claim
133 words
A resist pattern forming method, comprising the steps of: forming over a substrate a first film that constitutes an anti-reflective film; forming a resist film over the anti-reflective film; exposing a desired pattern onto the resist film through use of a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the first film constituting the anti-reflective film is a two-layer film of a second layer stacked on a first layer, and an extinction coefficient of the first layer for the pattern exposure light is not smaller than 1.8 and an extinction coefficient of the second layer for the pattern exposure light is not greater than 0.9, the second layer being an interference anti-reflection film for the pattern exposure light.
Claim 129
Dependent Claim
133 words
A resist pattern forming method, comprising the steps of: forming over a substrate a first film that constitutes an anti-reflective film; forming a resist film over the anti-reflective film; exposing a desired pattern onto the resist film through use of a pattern exposure light, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern; wherein the first film constituting the anti-reflective film is a two-layer film of a second layer stacked on a first layer, and an extinction coefficient of the first layer for the pattern exposure light is not smaller than 1.8 and an extinction coefficient of the second layer for the pattern exposure light is not greater than 0.9, the second layer being an interference anti-reflection film for the pattern exposure light.
Claim 130
Independent Claim
98 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a conductive film overlying an insulating film on a semiconductor substrate; forming an anti-reflective film over said conductive film; forming a resist film over the anti-reflective film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of the semiconductor device; and developing the exposed resist film, wherein the anti-reflective film has an extinction coefficient for the exposure light that is not uniform in a direction of anti-reflective film thickness.
Claim 131
Independent Claim
98 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a conductive film overlying an insulating film on a semiconductor substrate; forming an anti-reflective film over said conductive film; forming a resist film over the anti-reflective film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of the semiconductor device; and developing the exposed resist film, wherein the anti-reflective film has an extinction coefficient for the exposure light that is not uniform in a direction of anti-reflective film thickness.
Claim 132
Independent Claim
127 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a conductive film overlying an insulating film on a semiconductor substrate; forming an anti-reflective film over said conductive film; forming a resist film over the anti-reflective film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the anti-reflective film is a two-layer film of a first layer closest to the substrate and a second layer on the first layer, the second layer being an interference anti-reflection layer and the first layer having a greater extinction coefficient for the pattern exposure light than that of the second layer.
Claim 133
Independent Claim
127 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a conductive film overlying an insulating film on a semiconductor substrate; forming an anti-reflective film over said conductive film; forming a resist film over the anti-reflective film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the anti-reflective film is a two-layer film of a first layer closest to the substrate and a second layer on the first layer, the second layer being an interference anti-reflection layer and the first layer having a greater extinction coefficient for the pattern exposure light than that of the second layer.
References Cited (Backward Citations)
US5472829A
Cited
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USPTO Annuity & Maintenance Windows
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