Patent US6555879B1 successfully refreshed from Google Patents.
US6555879B1
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US
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SOI device with metal source/drain and method of fabrication
Assignee: Fullbrite Capital Partners
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Filing: 2002-01-11
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Granted: 2003-04-29
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Expires: 2022-01-11
Abstract
Abstract A MOSFET and method of fabrication. The MOSFET includes a metal containing source and a metal containing drain; a semiconductor body having a thickness of less than about 15 nm disposed between the source and the drain and on top of an insulating layer, the insulating layer formed on a substrate; a gate electrode disposed over the body and defining a channel interposed between the source and the drain; and a gate dielectric made from a high-K material and separating the gate electrode and the body.
Inventors
- 👤 Zoran Krivokapic
- 👤 Qi Xiang
- 👤 Bin Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:51
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D86/00; H10D86/01; H10D86/201; H10D64/691; H10D64/693
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
124 words
A MOSFET comprising: a metal containing source and a metal containing drain; a semiconductor body having a thickness of less than about 15 nm disposed between the source and the drain and on top of an insulating layer, the insulating layer formed on a substrate; a gate electrode disposed over the body and defining a channel interposed between the source and the drain; and a gate dielectric made from a high-K material and separating the gate electrode and the body; wherein the MOSFET is configured as an NMOS device; and wherein the gate electrode includes a lower portion defining a work function that controls the channel and an upper portion formed from a material used to form a gate of a nearby PMOS device.
Claim 2
Dependent Claim
124 words
A MOSFET comprising: a metal containing source and a metal containing drain; a semiconductor body having a thickness of less than about 15 nm disposed between the source and the drain and on top of an insulating layer, the insulating layer formed on a substrate; a gate electrode disposed over the body and defining a channel interposed between the source and the drain; and a gate dielectric made from a high-K material and separating the gate electrode and the body; wherein the MOSFET is configured as an NMOS device; and wherein the gate electrode includes a lower portion defining a work function that controls the channel and an upper portion formed from a material used to form a gate of a nearby PMOS device.
Claim 3
Dependent Claim
32 words
The MOSFET according to claim 1 , wherein the lower gate electrode portion is composed of one or more materials selected from titanium nitride, tantalum nitride, tungsten, tantalum, aluminum and combinations thereof.
Claim 4
Dependent Claim
35 words
The MOSFET according to claim 1 , wherein the upper gate electrode portion is composed of one or more materials selected from titanium nitride, tantalum nitride, tungsten, nickel, ruthenium, rhodium, palladium, platinum and combinations thereof.
Claim 5
Dependent Claim
38 words
The MOSFET according to claim 1 , wherein the high-K material is composed of one or more materials selected from hafnium oxide, zirconium oxide, cerium oxide, aluminum oxide, titanium oxide, yttrium oxide, barium strontium titanate and mixtures thereof.
Claim 6
Dependent Claim
20 words
The MOSFET according to claim 1 , further comprising a buffer interface disposed between the body and the gate dielectric.
Claim 7
Dependent Claim
27 words
The MOSFET according to claim 5 , wherein the buffer interface is formed from an oxide having a thickness of about 0.5 nm to about 0.7 nm.
Claim 8
Dependent Claim
121 words
A MOSFET comprising: a source having at least a portion comprising a metal and a drain having at least a portion comprising the metal; a semiconductor body having a thickness of less than about 15 nm disposed between the source and the drain and on top of an insulating layer, the insulating layer formed on a substrate, wherein the body forms junctions with the source portion comprising the metal and the drain portion comprising the metal; a gate electrode disposed over the body and defining a channel interposed between the source and the drain; and a gate dielectric made from a high-K material and separating the gate electrode and the body; and wherein the MOSFET is configured as an NMOS device.
Claim 9
Dependent Claim
121 words
A MOSFET comprising: a source having at least a portion comprising a metal and a drain having at least a portion comprising the metal; a semiconductor body having a thickness of less than about 15 nm disposed between the source and the drain and on top of an insulating layer, the insulating layer formed on a substrate, wherein the body forms junctions with the source portion comprising the metal and the drain portion comprising the metal; a gate electrode disposed over the body and defining a channel interposed between the source and the drain; and a gate dielectric made from a high-K material and separating the gate electrode and the body; and wherein the MOSFET is configured as an NMOS device.
Claim 10
Dependent Claim
16 words
The MOSFET according to claim 7 , wherein the gate is made from a mid-gap material.
Claim 11
Dependent Claim
30 words
The MOSFET according to claim 7 , wherein the gate electrode is composed of one or more materials selected from titanium nitride, tantalum nitride, tungsten, tantalum, aluminum and combinations thereof.
Claim 12
Dependent Claim
41 words
The MOSFET according to claim 7 , wherein the gate electrode includes a lower portion defining a work function that controls the channel and an upper portion formed from a material used to form a gate of a nearby PMOS device.
Claim 13
Dependent Claim
16 words
The MOSFET according to claim 7 , wherein the MOSFET is configured as a PMOS device.
Claim 14
Dependent Claim
33 words
The MOSFET according to claim 11 , wherein the gate electrode is composed of one or more materials selected from titanium nitride, tantalum nitride, tungsten, nickel, ruthenium, rhodium, palladium, platinum and combinations thereof.
Claim 15
Dependent Claim
38 words
The MOSFET according to claim 7 , wherein the high-K material is composed of one or more materials selected from hafnium oxide, zirconium oxide, cerium oxide, aluminum oxide, titanium oxide, yttrium oxide, barium strontium titanate and mixtures thereof.
Claim 16
Dependent Claim
20 words
The MOSFET according to claim 7 , further comprising a buffer interface disposed between the body and the gate dielectric.
Claim 17
Dependent Claim
27 words
The MOSFET according to claim 14 , wherein the buffer interface is formed from an oxide having a thickness of about 0.5 nm to about 0.7 nm.
Claim 18
Dependent Claim
26 words
The MOSFET according to claim 7 , wherein the source portion comprising the metal and the drain portion comprising the metal are formed from a silicide.
Claim 19
Dependent Claim
31 words
The MOSFET according to claim 16 , wherein the silicide is formed by reacting nickel with a layer of semiconductor material, the body being formed from the layer of semiconductor material.
Claim 20
Dependent Claim
31 words
The MOSFET according to claim 7 , wherein the source portion comprising the metal and the drain portion comprising the metal respectively extend under sidewall spacers disposed adjacent the gate electrode.
Claim 21
Dependent Claim
29 words
The MOSFET according to claim 7 , wherein the source portion comprising the metal and the drain portion comprising the metal extend downward to and contact the insulating layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-04-28 | 2006-10-28 | 2007-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-04-28 | 2010-10-28 | 2011-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-04-28 | 2014-10-28 | 2015-04-29 | $7700.00 | Window Closed / Lapsed |