US6100204A
Expired / Lapsed
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Method of making ultra thin gate oxide using aluminum oxide
Assignee: GlobalFoundries Inc
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Filing: 1998-07-28
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Granted: 2000-08-08
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Expires: 2018-07-28
Abstract
Abstract A transistor and a method of making the same are provided. The method includes the step of forming a gate dielectric layer on the substrate where the gate dielectric layer is composed of an aluminum oxide containing material. A gate electrode is formed on the gate dielectric layer and first and second source/drain regions are formed in the substrate laterally separated to define a channel region beneath the gate electrode. The aluminum oxide containing material may be, for example, Al 2 O 3 . Aluminum oxide provides for a gate dielectric with a thin equivalent thickness of oxide in a potentially single crystal form.
Inventors
- 👤 Mark I. Gardner
- 👤 Mark C. Gilmer
- 👤 Thomas E. Spikes, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:01
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/01342
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
66 words
A method of fabricating a transistor, comprising the steps of: forming a gate dielectric layer of an aluminum oxide containing material on the substrate by exposing the substrate to an ambient containing aluminum chloride and oxygen; forming a gate electrode on the gate dielectric layer; and forming first and second source/drain regions in the substrate laterally separated to define a channel region beneath the gate electrode.
Claim 2
Independent Claim
66 words
A method of fabricating a transistor, comprising the steps of: forming a gate dielectric layer of an aluminum oxide containing material on the substrate by exposing the substrate to an ambient containing aluminum chloride and oxygen; forming a gate electrode on the gate dielectric layer; and forming first and second source/drain regions in the substrate laterally separated to define a channel region beneath the gate electrode.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein the ambient contains about 50% aluminum chloride.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein the ambient contains an inert gas.
Claim 5
Dependent Claim
16 words
The method of claim 3, wherein the inert gas is N 2 , argon, or helium.
Claim 6
Dependent Claim
29 words
The method of claim 1, wherein the substrate is exposed to the aluminum chloride and oxygen ambient at about 500 to 900° C. for about 60 to 90 seconds.
Claim 7
Dependent Claim
29 words
The method of claim 1, wherein the substrate is exposed to the aluminum chloride and oxygen ambient at about 500 to 900° C. for about 2 to 10 minutes.
Claim 8
Dependent Claim
30 words
The method of claim 1, wherein the step of forming the gate electrode comprises depositing a layer of polysilicon and etching the layer of polysilicon to define the gate electrode.
Claim 9
Dependent Claim
19 words
The method of claim 1, comprising the step of forming first and second sidewall spacers adjacent the gate electrode.
Claim 10
Dependent Claim
58 words
The method of claim 8, wherein the step of forming the first and second source/drain regions comprises performing a first implant of a dopant specie into the substrate prior to formation of the first and second sidewall spacers and a second implant of the dopant specie into the substrate following formation of the first and second sidewall spacers.
Claim 11
Independent Claim
65 words
A method of fabricating a transistor, comprising the steps of: forming a gate dielectric layer of Al 2 O 3 on the substrate by exposing the substrate to an ambient containing aluminum chloride and oxygen; forming a gate electrode on the gate dielectric layer; and forming first and second source/drain regions in the substrate laterally separated to define a channel region beneath the gate electrode.
Claim 12
Independent Claim
65 words
A method of fabricating a transistor, comprising the steps of: forming a gate dielectric layer of Al 2 O 3 on the substrate by exposing the substrate to an ambient containing aluminum chloride and oxygen; forming a gate electrode on the gate dielectric layer; and forming first and second source/drain regions in the substrate laterally separated to define a channel region beneath the gate electrode.
Claim 13
Dependent Claim
17 words
The method of claim 10, wherein the ambient contains about 50% aluminum chloride and about 50% oxygen.
Claim 14
Dependent Claim
12 words
The method of claim 10, wherein the ambient contains an inert gas.
Claim 15
Dependent Claim
16 words
The method of claim 12, wherein the inert gas is N 2 , argon, or helium.
Claim 16
Dependent Claim
29 words
The method of claim 10, wherein the substrate is exposed to the aluminum chloride and oxygen ambient at about 500 to 900° C. for about 60 to 90 seconds.
Claim 17
Dependent Claim
29 words
The method of claim 10, wherein the substrate is exposed to the aluminum chloride and oxygen ambient at about 500 to 900° C. for about 2 to 10 minutes.
Claim 18
Dependent Claim
30 words
The method of claim 10, wherein the step of forming the gate electrode comprises depositing a layer of polysilicon and etching the layer of polysilicon to define the gate electrode.
Claim 19
Dependent Claim
19 words
The method of claim 10, comprising the step of forming first and second sidewall spacers adjacent the gate electrode.
Claim 20
Dependent Claim
58 words
The method of claim 17, wherein the step of forming the first and second source/drain regions comprises performing a first implant of a dopant specie into the substrate prior to formation of the first and second sidewall spacers and a second implant of the dopant specie into the substrate following formation of the first and second sidewall spacers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-08 | 2004-02-07 | 2004-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-08 | 2008-02-07 | 2008-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-08 | 2012-02-07 | 2012-08-08 | $7700.00 | Window Closed / Lapsed |