Patent US6552362B2 successfully refreshed from Google Patents.
US6552362B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and process for producing the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 2002-03-05
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Granted: 2003-04-22
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Expires: 2022-03-05
Abstract
Abstract To provide a semiconductor device having a large aperture ratio, in which an auxiliary capacitance of a large capacity is provided in each pixel. Capacitance wiring 102 comprising a tantalum film is formed on a substrate 101 having an insulating surface, and a tantalum oxide film 103 is formed by heat oxidation thereof. An active layer 104 comprising a semiconductor thin film is formed, and an auxiliary capacitance comprising the structure obtained by sandwiching the tantalum oxide film 103 with a part of the active layer 104 and the capacitance wiring 102 is formed. The active layer 104 functions as an active layer of a top-gate TFT.
Inventors
- 👤 Hisashi Ohtani
- 👤 Etsuko Fujimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:37
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136213; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; H10D86/00; H10D86/40; H10D86/481; H10D86/60; G02F1/136227
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
70 words
A semiconductor device comprising: first and second conductive films formed over a substrate; an insulating film formed over said first and second conductive films; and a thin film transistor formed over said insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said second conductive film.
Claim 2
Dependent Claim
70 words
A semiconductor device comprising: first and second conductive films formed over a substrate; an insulating film formed over said first and second conductive films; and a thin film transistor formed over said insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said second conductive film.
Claim 3
Dependent Claim
17 words
A semiconductor device according to claim 1 , wherein said first and second conductive films comprise tantalum.
Claim 4
Dependent Claim
44 words
A semiconductor device according to claim 1 , wherein said semiconductor device is incorporated into an electronic device selected from the group consisting of a camcorder, a still camera, a projection display, a car navigation system, a personal computer and a portable information terminal.
Claim 5
Dependent Claim
78 words
A semiconductor device comprising: first and second conductive films formed over a substrate; an insulating film formed over said first and second conductive films; and a thin film transistor formed adjacent to said first conductive film with said insulating film interposed therebetween, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said second conductive film.
Claim 6
Dependent Claim
78 words
A semiconductor device comprising: first and second conductive films formed over a substrate; an insulating film formed over said first and second conductive films; and a thin film transistor formed adjacent to said first conductive film with said insulating film interposed therebetween, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said second conductive film.
Claim 7
Dependent Claim
17 words
A semiconductor device according to claim 4 , wherein said first and second conductive films comprise tantalum.
Claim 8
Dependent Claim
44 words
A semiconductor device according to claim 4 , wherein said semiconductor device is incorporated into an electronic device selected from the group consisting of a camcorder, a still camera, a projection display, a car navigation system, a personal computer and a portable information terminal.
Claim 9
Dependent Claim
90 words
A semiconductor device comprising: first and second conductive films formed over a substrate; a first insulating film formed over said first and second conductive films; a second insulating film formed over said first insulating film; a thin film transistor formed over said second insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said second conductive film via a hole formed in said first insulating film.
Claim 10
Dependent Claim
90 words
A semiconductor device comprising: first and second conductive films formed over a substrate; a first insulating film formed over said first and second conductive films; a second insulating film formed over said first insulating film; a thin film transistor formed over said second insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said second conductive film via a hole formed in said first insulating film.
Claim 11
Dependent Claim
17 words
A semiconductor device according to claim 7 , wherein said first and second conductive films comprise tantalum.
Claim 12
Dependent Claim
44 words
A semiconductor device according to claim 7 , wherein said semiconductor device is incorporated into an electronic device selected from the group consisting of a camcorder, a still camera, a projection display, a car navigation system, a personal computer and a portable information terminal.
Claim 13
Dependent Claim
77 words
A semiconductor device comprising: a light shielding film formed over a substrate; a capacitor wiring formed over said substrate; an insulating film formed over said light shielding film and said capacitor wiring; and a thin film transistor formed over said insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said capacitor wiring.
Claim 14
Dependent Claim
77 words
A semiconductor device comprising: a light shielding film formed over a substrate; a capacitor wiring formed over said substrate; an insulating film formed over said light shielding film and said capacitor wiring; and a thin film transistor formed over said insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said capacitor wiring.
Claim 15
Dependent Claim
19 words
A semiconductor device according to claim 10 , wherein said light shielding film and a capacitor wiring comprise tantalum.
Claim 16
Dependent Claim
44 words
A semiconductor device according to claim 10 , wherein said semiconductor device is incorporated into an electronic device selected from the group consisting of a camcorder, a still camera, a projection display, a car navigation system, a personal computer and a portable information terminal.
Claim 17
Dependent Claim
85 words
A semiconductor device comprising: a light shielding film formed over a substrate; a capacitor wiring formed over said substrate; an insulating film formed over said light shielding film and said capacitor wiring; and a thin film transistor formed adjacent to said light shielding film with said insulating film interposed therebetween, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said capacitor wiring.
Claim 18
Dependent Claim
85 words
A semiconductor device comprising: a light shielding film formed over a substrate; a capacitor wiring formed over said substrate; an insulating film formed over said light shielding film and said capacitor wiring; and a thin film transistor formed adjacent to said light shielding film with said insulating film interposed therebetween, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said capacitor wiring.
Claim 19
Dependent Claim
19 words
A semiconductor device according to claim 13 , wherein said light shielding film and a capacitor wiring comprise tantalum.
Claim 20
Dependent Claim
44 words
A semiconductor device according to claim 13 , wherein said semiconductor device is incorporated into an electronic device selected from the group consisting of a camcorder, a still camera, a projection display, a car navigation system, a personal computer and a portable information terminal.
Claim 21
Dependent Claim
98 words
A semiconductor device comprising: a light shielding film formed over a substrate; a capacitor wiring formed over said substrate; a first insulating film formed over said light shielding film and said capacitor wiring; a second insulating film formed over said first insulating film; and a thin film transistor formed over said second insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said capacitor wiring via a hole formed in said first insulating film.
Claim 22
Dependent Claim
98 words
A semiconductor device comprising: a light shielding film formed over a substrate; a capacitor wiring formed over said substrate; a first insulating film formed over said light shielding film and said capacitor wiring; a second insulating film formed over said first insulating film; and a thin film transistor formed over said second insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween, wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said capacitor wiring via a hole formed in said first insulating film.
Claim 23
Dependent Claim
19 words
A semiconductor device according to claim 16 , wherein said light shielding film and a capacitor wiring comprise tantalum.
Claim 24
Dependent Claim
44 words
A semiconductor device according to claim 16 , wherein said semiconductor device is incorporated into an electronic device selected from the group consisting of a camcorder, a still camera, a projection display, a car navigation system, a personal computer and a portable information terminal.
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