Liquid crystal display device

Claim 2

A thin film transistor array for a liquid crystal display device comprising: an insulating substrate; a plurality of gate electrodes formed on the insulating substrate; a plurality of additional capacity electrodes formed on the insulating substrate on substantially the same plane as that of the gate electrodes, and made of tantalum, the same material as the gate electrodes, to provide a low resistance and to allow for formation of a plurality of additional capacity electrodes small in thickness and width; an insulating film covering at least the gate electrodes and the additional capacity electrodes; a plurality of picture element electrodes formed on the insulating film in a matrix form; and a plurality of thin film transistors formed on the insulating film and connected to said gate electrodes, said thin film transistors being coupled to the picture element electrodes respectively, for switching the voltage to be applied to the corresponding picture element electrodes.

Claim 3

A thin film transistor array as claimed in claim 1, wherein the thin film transistors are of reverse stagger type.

Claim 4

A thin film transistor array as claimed in claim 1, wherein other insulating films are formed on the additional capacity electrodes.

Claim 5

A thin film transistor array as claimed in claim 3, wherein the other insulating films includes tantalum oxide films.

Claim 6

A thin film transistor array as claimed in claim 4, wherein the tantalum oxide films include tantalum pentoxide films.

Claim 7

A thin film transistor array as claimed in claim 1, wherein the insulating film includes silicon nitride film.

Claim 8

A thin film transistor array for a liquid crystal display device comprising: an insulating substrate; picture element electrodes arranged on the insulating substrate; thin film transistors, including drain, source and gate electrodes, connected to said picture element electrodes, for switching the voltage to be applied to the picture element electrodes; and additional capacity electrodes, formed of tantalum, the same material as the gate electrodes of the thin film transistors, to provide a low resistance and to allow for formation of additional capacity electrodes small in thickness and width, and located on the insulating substrate a predetermined pitch from said thin film transistors and below the picture element electrodes, for improving picture element potential retaining characteristics, said additional capacity electrodes being formed on substantially the same plane as that of the gate electrodes.

Claim 9

A thin film transistor array for a liquid crystal display device comprising: an insulating substrate; picture element electrodes arranged on the insulating substrate; thin film transistors, including drain, source and gate electrodes, connected to said picture element electrodes, for switching the voltage to be applied to the picture element electrodes; and additional capacity electrodes, formed of tantalum, the same material as the gate electrodes of the thin film transistors, to provide a low resistance and to allow for formation of additional capacity electrodes small in thickness and width, and located on the insulating substrate a predetermined pitch from said thin film transistors and below the picture element electrodes, for improving picture element potential retaining characteristics, said additional capacity electrodes being formed on substantially the same plane as that of the gate electrodes.

Claim 10

A thin film transistor array as claimed in claim 7, wherein the thin film transistors are of reverse stagger type.

Claim 11

A thin film transistor as claimed in claim 7, further comprising insulation film for insulating the additional capacity electrodes from the picture element electrodes.

Claim 12

A thin film transistor array as claimed in claim 9, wherein the insulating film is made of an oxidized version of the material of the additional capacity electrodes.

Claim 13

A thin film transistor array as claimed in claim 7, further comprising insulating film for insulating the additional capacity electrodes from the picture element electrodes.

Claim 14

A thin film transistor array as claimed in claim 11, wherein the insulation film includes tantalum pentoxide film, an oxidized version of tantalum.

Claim 15

A thin film transistor array as claimed in claim 11, wherein the insulation film includes silicon nitride film.

Claim 16

A thin film transistor array for a liquid crystal displace device comprising: an insulating substrate; picture element electrodes arranged on said substrate; a plurality of thin film transistors, connected to said picture element electrodes, for addressing selected ones of said picture element electrodes, and supplying voltage for illuminating said selected ones of said picture element electrodes, each said thin film transistor including, drain electrode, source electrode, and gate electrodes; and additional capacity electrodes, positioned at a predetermined pitch from said thin film transistors on said insulating substrate, made of tantalum, the same material as the gate electrodes, to provide a low resistance, to allow for formation of additional capacity electrodes small in thickness and width, and for retaining a large capacitance value and thereby improving said picture element electrodes ability to retain voltage potential, said additional capacity electrodes being formed on substantially the same plane as that of the gate electrodes.

Claim 17

A thin film transistor array for a liquid crystal displace device comprising: an insulating substrate; picture element electrodes arranged on said substrate; a plurality of thin film transistors, connected to said picture element electrodes, for addressing selected ones of said picture element electrodes, and supplying voltage for illuminating said selected ones of said picture element electrodes, each said thin film transistor including, drain electrode, source electrode, and gate electrodes; and additional capacity electrodes, positioned at a predetermined pitch from said thin film transistors on said insulating substrate, made of tantalum, the same material as the gate electrodes, to provide a low resistance, to allow for formation of additional capacity electrodes small in thickness and width, and for retaining a large capacitance value and thereby improving said picture element electrodes ability to retain voltage potential, said additional capacity electrodes being formed on substantially the same plane as that of the gate electrodes.