Patent US6544858B1 successfully refreshed from Google Patents.
US6544858B1
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US
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Method for treating silicon-containing polymer layers with plasma or electromagnetic radiation
Assignee: Trikon Equipments Ltd
•
Filing: 1999-01-27
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Granted: 2003-04-08
•
Expires: 2019-01-27
Abstract
Abstract A silicon-containing polymer is deposited in a recess on the surface of the substrate. The substrate is then heated to a given temperature. The surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, is subjected to gas or vapor activated by a plasma or other electromagnetic radiation which is distinct from a source of heat used to heat the substrate to the given temperature.
Inventors
- 👤 Knut Beekman
- 👤 Jashu Patel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P95/00; H10P95/06; H10P14/6336; H10P14/69215
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
135 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the silicon-containing polymer is deposited on the surface of the substrate by positioning the substrate in a chamber, introducing into the chamber a silicon-containing gas or vapour and a compound containing peroxide bonding, in vapour form, and reacting the silicon-containing gas or vapour with the compound to form the polymer.
Claim 2
Independent Claim
135 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the silicon-containing polymer is deposited on the surface of the substrate by positioning the substrate in a chamber, introducing into the chamber a silicon-containing gas or vapour and a compound containing peroxide bonding, in vapour form, and reacting the silicon-containing gas or vapour with the compound to form the polymer.
Claim 3
Dependent Claim
17 words
A method according to claim 1 , wherein the silicon-containing gas is a silane or higher silane.
Claim 4
Dependent Claim
16 words
A method according to claim 1 , wherein the compound containing peroxide bonding is hydrogen peroxide.
Claim 5
Dependent Claim
30 words
A method according to claim 1 , wherein the surface of the substrate is subjected to the activated gas or vapour after a period of the heating of the substrate.
Claim 6
Dependent Claim
17 words
A method according to claim 1 , wherein the activated gas or vapour is an oxygen plasma.
Claim 7
Dependent Claim
18 words
A method according to claim 1 , wherein the activated gas or vapour is a CF 4 plasma.
Claim 8
Dependent Claim
19 words
A method according to claim 1 , wherein the heat source is a heated platen which supports the substrate.
Claim 9
Dependent Claim
21 words
A method according to claim 1 , wherein the given temperature is in a range of 300° C. to 500° C.
Claim 10
Dependent Claim
21 words
A method according to claim 1 , wherein the substrate is positioned on a platen connected to an RF power source.
Claim 11
Dependent Claim
16 words
A method according to claim 9 , wherein the RF power is less than 1 MHz.
Claim 12
Dependent Claim
22 words
A method according to claim 1 , further comprising depositing or forming a capping layer on the substrate of the deposited polymer.
Claim 13
Dependent Claim
23 words
A method according to claim 11 , wherein the capping layer is deposited after subjecting the substrate to the activated gas or vapour.
Claim 14
Dependent Claim
17 words
A method according to claim 11 , wherein the capping layer is formed of SiO 2 .
Claim 15
Independent Claim
17 words
A method according to any one of claims 11 , further comprising heating the polymer after capping.
Claim 16
Dependent Claim
12 words
A method according to claim 1 , wherein the polymer is densified.
Claim 17
Dependent Claim
22 words
A method according to claim 1 , wherein an underlayer of thermal oxide is provided on the substrate under the deposited polymer.
Claim 18
Dependent Claim
17 words
A method according to claim 16 , wherein a mask is formed on the thermal oxide layer.
Claim 19
Dependent Claim
22 words
A method according to claim 1 in a shallow trench isolation process, wherein the recess width is between 0.13 and 0.35 microns.
Claim 20
Dependent Claim
22 words
A method according to claim 1 in a shallow trench isolation process, wherein the recess depth is between 0.3 and 0.5 microns.
Claim 21
Dependent Claim
29 words
A method according to claim 1 , wherein the silicon-containing polymer extends from the recess above the surface of the substrate, and wherein the substrate is a semiconductor wafer.
Claim 22
Dependent Claim
14 words
A method according to claim 1 , wherein the polymer is an intermetal dielectric.
Claim 23
Dependent Claim
22 words
A method according to claim 21 , wherein the recess is formed of an intermetal gap of between 0.13 and 0.35 microns.
Claim 24
Dependent Claim
20 words
A method according to claim 1 , wherein the gas or vapour pressure is between 5 mTorr and 500 mTorr.
Claim 25
Independent Claim
119 words
A method of isolating active zones in a semiconductor layer on a substrate having a layer of thermal oxide on its surface, comprising: depositing a silicon-containing polymer in one or more recesses separating the active zones; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by transferring heat to the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to a gas or vapour activated by a plasma or other electro-magnetic radiation which is distinct from the heat source such that a wet etch rate of the silicon-containing polymer is reduced to be similar to that of the thermal oxide.
Claim 26
Independent Claim
119 words
A method of isolating active zones in a semiconductor layer on a substrate having a layer of thermal oxide on its surface, comprising: depositing a silicon-containing polymer in one or more recesses separating the active zones; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by transferring heat to the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to a gas or vapour activated by a plasma or other electro-magnetic radiation which is distinct from the heat source such that a wet etch rate of the silicon-containing polymer is reduced to be similar to that of the thermal oxide.
Claim 27
Dependent Claim
14 words
A method according to claim 24 , wherein the thermal oxide layer is etched.
Claim 28
Dependent Claim
18 words
A method according to claim 25 , wherein the thermal oxide layer is etched using buffered hydrofluoric acid.
Claim 29
Dependent Claim
28 words
A method according to claim 24 , wherein the wet etch rate of the silicon-containing polymer is reduced to 1.2 times faster than that of the thermal oxide.
Claim 30
Independent Claim
95 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the activated gas or vapour is a CF 4 plasma.
Claim 31
Independent Claim
95 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the activated gas or vapour is a CF 4 plasma.
Claim 32
Independent Claim
98 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the substrate is positioned on a platen connected to an RF power source.
Claim 33
Independent Claim
98 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the substrate is positioned on a platen connected to an RF power source.
Claim 34
Dependent Claim
16 words
A method according to claim 29 , wherein the RF power is less than 1 MHz.
Claim 35
Independent Claim
89 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the polymer is densified.
Claim 36
Independent Claim
89 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the polymer is densified.
Claim 37
Independent Claim
99 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein an underlayer of thermal oxide is provided on the substrate under the deposited polymer.
Claim 38
Independent Claim
99 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein an underlayer of thermal oxide is provided on the substrate under the deposited polymer.
Claim 39
Dependent Claim
17 words
A method according to claim 32 , wherein a mask is formed on the thermal oxide layer.
Claim 40
Independent Claim
107 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the method is carried out in a shallow trench isolation process, and wherein the recess width is between 0.13 and 0.35 microns.
Claim 41
Independent Claim
107 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the method is carried out in a shallow trench isolation process, and wherein the recess width is between 0.13 and 0.35 microns.
Claim 42
Independent Claim
107 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the method is carried out in a shallow trench isolation process, and wherein the recess depth is between 0.3 and 0.5 microns.
Claim 43
Independent Claim
107 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the method is carried out in a shallow trench isolation process, and wherein the recess depth is between 0.3 and 0.5 microns.
Claim 44
Independent Claim
111 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the method is carried out in an intermetal dielectric process, and wherein the recess is formed of an intermetal gap of between 0.13 and 0.35 microns.
Claim 45
Independent Claim
111 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the method is carried out in an intermetal dielectric process, and wherein the recess is formed of an intermetal gap of between 0.13 and 0.35 microns.
Claim 46
Independent Claim
97 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the gas or vapour pressure is between 5 mTorr and 500 mTorr.
Claim 47
Independent Claim
97 words
A method of treating a surface of a substrate, which method comprises: depositing a silicon-containing polymer in a recess on the surface of the substrate; heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the gas or vapour pressure is between 5 mTorr and 500 mTorr.
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