Patent US6521911B2 successfully refreshed from Google Patents.
US6521911B2
Expired / Lapsed
US
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High dielectric constant metal silicates formed by controlled metal-surface reactions
Assignee: North Carolina State University
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Filing: 2001-07-19
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Granted: 2003-02-18
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Expires: 2021-07-19
Abstract
Abstract A method of forming an insulation layer on a semiconductor substrate includes modifying a surface of a semiconductor substrate with a metal or a metal-containing compound and oxygen to form an insulation layer on the surface of the semiconductor substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon bonds.
Inventors
- 👤 Gregory N. Parsons
- 👤 James J. Chambers
- 👤 M. Jason Kelly
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; B; B82; B82Y; B82Y10/00; C; C23; C23C; C23C14/00; C23C14/02; C23C14/021; C23C14/022; C23C14/024; C23C14/06; C23C14/14; C23C14/18; C23C14/185; C23C14/58; C23C14/5806; C23C14/5846; C23C14/5853; C23C14/586; C23C26/00; C23C8/00; C23C8/80; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/65; H10P14/6516; H10P14/6529; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P14/6319; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69396
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
115 words
A method of forming an insulation layer on a semiconductor substrate, said method comprising: oxidizing a surface of the semiconductor substrate to form a silicon dioxide layer thereon; after said oxidizing step, depositing at least one metal or metal-containing compound on the surface of the silicon dioxide layer; and annealing the semiconductor substrate to modify the surface of the semiconductor substrate to form a noncrystalline insulation layer on the surface of the semiconductor substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon bonds.
Claim 2
Independent Claim
115 words
A method of forming an insulation layer on a semiconductor substrate, said method comprising: oxidizing a surface of the semiconductor substrate to form a silicon dioxide layer thereon; after said oxidizing step, depositing at least one metal or metal-containing compound on the surface of the silicon dioxide layer; and annealing the semiconductor substrate to modify the surface of the semiconductor substrate to form a noncrystalline insulation layer on the surface of the semiconductor substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon bonds.
Claim 3
Dependent Claim
32 words
The method according to claim 1 , wherein the semiconductor substrate comprises at least one material selected from the group consisting of silicon, silicon carbide, gallium arsenide, gallium nitride, and combinations thereof.
Claim 4
Dependent Claim
27 words
The method according to claim 1 , wherein the metal is selected from the group consisting of yttrium, lanthanum, scandium, zirconium, halfnium, cesium, aluminum, and combinations thereof.
Claim 5
Dependent Claim
18 words
The method according to claim 1 , wherein the metal-containing compound is an alloy which is an aluminate.
Claim 6
Dependent Claim
35 words
The method according to claim 1 , wherein the metal-containing compound is an alloy comprising at least one metal selected from the group consisting of yttrium, lanthanum, scandium, zirconium, halfnium, cesium, aluminum, and combinations thereof.
Claim 7
Dependent Claim
15 words
The method according to claim 1 , wherein the metal-containing material is a metal oxide.
Claim 8
Dependent Claim
23 words
The method according to claim 1 , wherein the insulation layer has a defect density no greater than 10 12 atoms/cm 2 .
Claim 9
Dependent Claim
46 words
The method according to claim 1 , wherein the insulation layer comprises of from about 2 to about 40 atomic percent of the metal, from about 40 to about 66 atomic percent of oxygen, and about or above 0 to about 33 atomic percent of silicon.
Claim 10
Dependent Claim
38 words
The method according to claim 1 , wherein the insulation layer has a dielectric constant which is at least a factor of 3 greater relative to an insulation layer that does not include the metal or metal-containing compound.
Claim 11
Dependent Claim
23 words
The method according to claim 1 , wherein the insulation layer has a thickness ranging from about 5 Å to about 100 Å.
Claim 12
Dependent Claim
54 words
The method according to claim 1 , wherein said modifying step comprises forming the insulating layer on the semiconductor substrate; and subjecting the semiconductor substrate and the insulating layer to conditions sufficient such that the metal or metal-containing compound react with the insulating layer to modify the insulating layer to increase the dielectric constant.
Claim 13
Dependent Claim
67 words
The method according to claim 11 , wherein said step of subjecting the semiconductor substrate to conditions sufficient such that the metal or metal-containing compound forms the insulation layer comprises subjecting the semiconductor substrate to a process selected from the group consisting of an annealing in a vacuum, annealing in an oxidizing ambient, and annealing in a combined vacuum/oxidation ambient such that the insulation layer is formed.
Claim 14
Dependent Claim
25 words
The method according to claim 1 , wherein said modifying step comprises subjecting the semiconductor substrate to an annealing/oxidation ambient to form the insulation layer.
Claim 15
Dependent Claim
32 words
The method according to claim 1 , wherein said modifying step comprises depositing the at least one metal or metal-containing compound by chemical vapor deposition or reactive atomic layer chemical vapor deposition.
Claim 16
Dependent Claim
26 words
The method according to claim 1 , wherein said step of oxidizing the semiconductor substrate to form a silicon dioxide layer thereon is a plasma oxidation.
Claim 17
Dependent Claim
55 words
The method according to claim 1 , wherein the at least one metal or metal-containing compound is a metal oxide and wherein said step of depositing the at least one metal or metal-containing compound on the surface of the semiconductor substrate comprises employing a Chemical Vapor Deposition process or a plasma Chemical Vapor Deposition process.
Claim 18
Dependent Claim
24 words
The method according to claim 1 , wherein said step of annealing the semiconductor substrate comprises exposing the semiconductor substrate to a nitrogen-containing atmosphere.
Claim 19
Dependent Claim
52 words
The method according to claim 1 , wherein said modifying step comprises: exposing the semiconductor substrate to nitrogen-containing atmosphere to form a nitrogen-containing film thereon; depositing at least one metal oxide compound on the surface of the nitrogen-containing film; and annealing the semiconductor substrate to modify the surface of the semiconductor substrate.
Claim 20
Dependent Claim
64 words
A surface-modified semiconductor substrate comprising: a semiconductor substrate comprising silicon; and a noncrystalline insulation layer formed on an oxidized surface of the semiconductor substrate, said insulation layer comprises a metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon bonds.
Claim 21
Dependent Claim
64 words
A surface-modified semiconductor substrate comprising: a semiconductor substrate comprising silicon; and a noncrystalline insulation layer formed on an oxidized surface of the semiconductor substrate, said insulation layer comprises a metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon bonds.
Claim 22
Dependent Claim
32 words
The substrate according to claim 19 , wherein the semiconductor substrate comprises at least one material selected from the group consisting of silicon, silicon carbide, gallium arsenide, gallium nitride, and combinations thereof.
Claim 23
Dependent Claim
27 words
The substrate according to claim 19 , wherein the metal is selected from the group consisting of yttrium, lanthanum, scandium, zirconium, halfnium, cesium, aluminum, and combinations thereof.
Claim 24
Dependent Claim
18 words
The substrate according to claim 19 , wherein the metal-containing compound is an alloy which is an aluminate.
Claim 25
Dependent Claim
35 words
The substrate according to claim 19 , wherein the metal-containing compound is an alloy comprising at least one metal selected from the group consisting of yttrium, lanthanum, scandium, zirconium, halfnium, cesium, aluminum, and combinations thereof.
Claim 26
Dependent Claim
15 words
The substrate according to claim 19 , wherein the metal-containing material is a metal oxide.
Claim 27
Dependent Claim
23 words
The substrate according to claim 19 , wherein the insulation layer has a defect density no greater than 10 12 atoms/cm 2 .
Claim 28
Dependent Claim
46 words
The substrate according to claim 19 , wherein the insulation layer comprises of from about 2 to about 40 atomic percent of the metal, from about 40 to about 66 atomic percent of oxygen, and about or above about 0 to about 33 percent of silicon.
Claim 29
Dependent Claim
38 words
The substrate according to claim 19 , wherein the insulation layer has a dielectric constant which is at least a factor of 3 greater relative to an insulation layer that does not include the metal or metal-containing compound.
Claim 30
Dependent Claim
23 words
The substrate according to claim 19 , wherein the insulation layer has a thickness ranging from about 5 Å to about 100 Å.
Claim 31
Dependent Claim
14 words
A microelectronic device comprising the surface-modified semiconductor substrate as recited by claim 19 .
Claim 32
Dependent Claim
40 words
The microelectronic device according to claim 29 , wherein the microelectronic device is selected from the group consisting of a thin film transistor, a CMOS gate dielectric device, a memory device, a molecular electronic device, and an organic electronic device.
Claim 33
Dependent Claim
21 words
The microelectronic device according to claim 29 , wherein the microelectronic device comprises elements electronically or physically coupled with semiconducting substrates.
Claim 34
Dependent Claim
32 words
The microelectronic device according to claim 29 , wherein the semiconductor substrate comprises at least one material selected from the group consisting of silicon carbide, gallium arsenide, gallium nitride, and combinations thereof.
Claim 35
Dependent Claim
28 words
The microelectronic device according to claim 29 , wherein the metal is selected from the group consisting of yttrium, lanthanum, scandium, zirconium, halfnium, cesium, aluminum, and combinations thereof.
Claim 36
Dependent Claim
19 words
The microelectronic device according to claim 29 , wherein the metal-containing compound is an alloy which is an aluminate.
Claim 37
Dependent Claim
35 words
The substrate according to claim 29 , wherein the metal-containing compound is an alloy comprising at least one metal selected from the group consisting of yttrium, lanthanum, scandium, zirconium, halfnium, cesium, aluminum, and combinations thereof.
Claim 38
Dependent Claim
16 words
The microelectronic device according to claim 29 , wherein the metal-containing material is a metal oxide.
Claim 39
Dependent Claim
24 words
The microelectronic device according to claim 29 , wherein the insulation layer has a defect density no greater than 10 12 atoms/cm 2 .
Claim 40
Dependent Claim
47 words
The microelectronic device according to claim 29 , wherein the insulation layer comprises of from about 2 to about 40 atomic percent of the metal, from about 40 to about 66 atomic percent of oxygen, and about or above about 0 to about 33 percent of silicon.
Claim 41
Dependent Claim
39 words
The microelectronic device according to claim 29 , wherein the insulation layer has a dielectric constant which is at least a factor of 3 greater relative to an insulation layer that does not include the metal or metal-containing compound.
Claim 42
Dependent Claim
24 words
The microelectronic device according to claim 29 , wherein the insulation layer has a thickness ranging from about 5 Å to about 100 Å.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-02-17 | 2006-08-19 | 2007-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-02-17 | 2010-08-19 | 2011-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-02-17 | 2014-08-19 | 2015-02-18 | $7700.00 | Window Closed / Lapsed |