EP0077200A2
Expired / Lapsed
EP
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Producing insulating layers in semiconductor devices
Assignee: Fujitsu Ltd
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Filing: 1982-10-08
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Granted: —
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Expires: 2002-10-08
Abstract
Abstract A process for producing a dielectric layer on a semiconductor layer (1) comprises the steps of: forming a layer of oxide (2') of an element selected from the group of tantalum, titanium, niobium, hafnium, yttrium, zirconium, and vanadium on the surface of said semi-conductor layer; and heating said semiconductor layer having said oxide layer thereon in an oxidizing atmosphere, thereby thermally oxidizing the material constituting said semiconductor layer so as to form an insulating layer (3) which comprises oxide of said semiconductor material at the interface between said semiconductor layer and said oxide layer.
Inventors
- 👤 Takashi Kato
- 👤 Nobuo Toyokura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 00:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6314; H10P14/6322; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/662
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
99 words
A method of manufacturing a semiconductor device, wherein a layer (2') of an oxide of an element selected from the group made up of tantalum, titanium, niobium, hafnium, yttrium, zirconium, and vanadium is formed on a semiconductor substrate (1) characterized in that the said semicondu- tor substrate having said layer of oxide thereon is heated in an oxidizing atmosphere so as to oxidize semiconductor material of the said substrate thereby to form an insulating layer (3) made of an oxide of said semiconductor material, sandwiched between said layer of oxide and remaining semi- conductor material of the said substrate.
Claim 2
Independent Claim
99 words
A method of manufacturing a semiconductor device, wherein a layer (2') of an oxide of an element selected from the group made up of tantalum, titanium, niobium, hafnium, yttrium, zirconium, and vanadium is formed on a semiconductor substrate (1) characterized in that the said semicondu- tor substrate having said layer of oxide thereon is heated in an oxidizing atmosphere so as to oxidize semiconductor material of the said substrate thereby to form an insulating layer (3) made of an oxide of said semiconductor material, sandwiched between said layer of oxide and remaining semi- conductor material of the said substrate.
Claim 3
Dependent Claim
14 words
A method as claimed in claim 1, wherein the said semiconductor material comprises silicon.
Claim 4
Dependent Claim
15 words
A method as claimed in claim 1 or 2 wherein the said element is tantalum.
Claim 5
Dependent Claim
20 words
A method as claimed in claim 1, 2 or 3, further characterized in that said oxidizing atmosphere comprises wet oxygen.
Claim 6
Dependent Claim
30 words
A method as claimed in claim 4 characterized in that the heating in the said oxidizing atmosphere is carried out at a temperature in a range from 7000C to 1200°C.
Claim 7
Independent Claim
39 words
A method as claimed in any preceding claim, including the steps of depositing a layer (2) of the said element on the said semiconductor substrate, and oxidizing that layer so as to produce the said layer of an oxide.
Claim 8
Independent Claim
17 words
A method as claimed in any preceding claim, wherein the said semiconductor substrate is of p-type conductivity.
Claim 9
Independent Claim
23 words
A method as claimed in any one of the preceding claims 1 to 6, wherein the said semiconductor substrate is of n-type conductivity.
Claim 10
Independent Claim
27 words
A method as claimed in any preceding claim characterized by a further step of forming an electrically conductive layer on the said layer (2') of an oxide.
References Cited (Backward Citations)
No citation records indexed.
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