Patent US6511873B2 successfully refreshed from Google Patents.
US6511873B2
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High-dielectric constant insulators for FEOL capacitors
Assignee: GlobalFoundries US Inc
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Filing: 2001-06-15
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Granted: 2003-01-28
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Expires: 2021-06-15
Abstract
Abstract Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.
Inventors
- 👤 Arne W. Ballantine
- 👤 Douglas A. Buchanan
- 👤 Eduard A. Cartier
- 👤 Douglas D. Coolbaugh
- 👤 Evgeni P. Gousev
- 👤 Harald F. Okorn-Schmidt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:06
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D1/68; H10D1/682; H10D1/692; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D84/00; H10D84/201; H10D84/204; H10D84/212; H10D84/40; H10D84/401; H10D84/403; H10D84/80; H10D84/811; H10D84/813; H10D64/01342; H10D64/01344; H10D64/691; H10D64/693
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
100 words
A method of forming a metal-insulator-silicon (MIS) capacitor comprising the steps of: (a) implanting a bottom electrode into a surface of a Si-containing substrate; (b) forming a high-k dielectric over at least a portion of said bottom electrode, said high-k dielectric having a dielectric constant of greater than about 8.0; and (c) forming a doped poly SiGe-containing electrode over said high-k dielectric, wherein said bottom electrode, said high-k dielectric and a portion of said doped poly SiGe-containing electrode form a capacitor and another portion of said doped poly SiGe-containing electrode comprises an intrinsic base layer of an abutting bipolar device.
Claim 2
Independent Claim
100 words
A method of forming a metal-insulator-silicon (MIS) capacitor comprising the steps of: (a) implanting a bottom electrode into a surface of a Si-containing substrate; (b) forming a high-k dielectric over at least a portion of said bottom electrode, said high-k dielectric having a dielectric constant of greater than about 8.0; and (c) forming a doped poly SiGe-containing electrode over said high-k dielectric, wherein said bottom electrode, said high-k dielectric and a portion of said doped poly SiGe-containing electrode form a capacitor and another portion of said doped poly SiGe-containing electrode comprises an intrinsic base layer of an abutting bipolar device.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein step (a) includes a high-dose reach-thru implant which provides a doped region having a dopant concentration of about 1×10 19 atoms/cm 3 or above.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein following said implant step said bottom electrode is annealed in an inert gas.
Claim 5
Dependent Claim
50 words
The method of claim 1 wherein said high-k dielectric is formed by a deposition process selected from the group consisting of low pressure chemical vapor deposition, atomic layer chemical vapor deposition, rapid thermal chemical vapor deposition, plasma-assisted chemical vapor deposition, physical vapor deposition, sputtering, plating, evaporation and chemical solution deposition.
Claim 6
Dependent Claim
28 words
The method of claim 1 wherein said high-k dielectric is a binary metal oxide, a silicate, aluminate, or oxynitride of a binary metal oxide, or a perovskite oxide.
Claim 7
Dependent Claim
22 words
The method of claim 5 wherein said high-k dielectric is a binary metal oxide or an aluminate of a binary metal oxide.
Claim 8
Dependent Claim
15 words
The method of claim 6 wherein said high-k dielectric is Al 2 O 3 .
Claim 9
Dependent Claim
19 words
The method of claim 1 wherein said high-k dielectric has a thickness from about 50 to about 1000 Å.
Claim 10
Dependent Claim
29 words
The method of claim 1 wherein a diffusion barrier layer is formed on said bottom electrode prior to formation of said high-k dielectric, on said high-k dielectric or both.
Claim 11
Dependent Claim
21 words
The method of claim 1 wherein said high-k dielectric and said doped poly SiGe-containing electrode are patterned after performing step (c).
Claim 12
Dependent Claim
13 words
The method of claim 1 wherein said doped Si-containing electrode comprises poly SiGe.
Claim 13
Dependent Claim
25 words
The method of claim 1 wherein said doped poly SiGe-containing electrode is formed by deposition and ion implantation or by an in-situ doping deposition process.
Claim 14
Dependent Claim
24 words
The method of claim 10 wherein spacers arm formed on exposed sidewalls of said patterned high-k dielectric and said patterned doped poly SiGe-containing electrode.
Claim 15
Dependent Claim
89 words
A MIS capacitor integrated with a bipolar device comprising an implanted bottom electrode formed in a surface of a Si-containing substrate; a high-k dielectric having a dielectric constant of greater than about 8 formed on a portion of said implanted bottom electrode; and a doped poly SiGe-containing electrode formed on said high-k dielectric, wherein a portion of said doped poly SiGe-containing electrode is a top electrode of the MIS capacitor and another portion of said doped poly SiGe-containing electrode comprises an intrinsic base layer of an abutting bipolar device.
Claim 16
Dependent Claim
89 words
A MIS capacitor integrated with a bipolar device comprising an implanted bottom electrode formed in a surface of a Si-containing substrate; a high-k dielectric having a dielectric constant of greater than about 8 formed on a portion of said implanted bottom electrode; and a doped poly SiGe-containing electrode formed on said high-k dielectric, wherein a portion of said doped poly SiGe-containing electrode is a top electrode of the MIS capacitor and another portion of said doped poly SiGe-containing electrode comprises an intrinsic base layer of an abutting bipolar device.
Claim 17
Dependent Claim
29 words
The MIS capacitor of claim 14 wherein said high-k dielectric is a binary metal oxide, a silicate, aluminate or oxynitride of a binary metal oxide, or a perovskite oxide.
Claim 18
Dependent Claim
23 words
The MIS capacitor of claim 15 wherein said high-k dielectric is a binary metal oxide or an aluminate of a binary metal oxide.
Claim 19
Dependent Claim
16 words
The MIS capacitor of claim 16 wherein said high-k dielectric is Al 2 O 3 .
Claim 20
Dependent Claim
24 words
The MIS capacitor of claim 14 wherein spacers are present on any exposed sidewalls of said high-k dielectric and said doped poly SiGe-containing electrode.
Claim 21
Dependent Claim
51 words
The MIS capacitor of claim 14 wherein a diffusion barrier layer is present between said bottom electrode and said high-k dielectric, between said high-k dielectric and said doped poly SiGe-containing electrode, or between said bottom electrode and said high-k dielectric and between said high-k dielectric and said doped poly SiGe-containing electrode.
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