Patent US6475869B1 successfully refreshed from Google Patents.
US6475869B1
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Method of forming a double gate transistor having an epitaxial silicon/germanium channel region
Assignee: GlobalFoundries US Inc
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Filing: 2001-02-26
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Granted: 2002-11-05
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Expires: 2021-02-26
Abstract
Abstract A method of manufacturing an integrated circuit with a channel region containing germanium. The method can provide a double planar gate structure. The gate structure can be provided over lateral sidewalls of channel region. The semiconductor material containing germanium can increase the charge mobility associated with the transistor. An epitaxy process can form the channel region. A silicon-on-insulator can be used.
Inventors
- 👤 Bin Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:17
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/62; H10D30/01; H10D30/021; H10D30/024; H10D30/67; H10D30/6729; H10D30/673; H10D30/674; H10D30/6741; H10D30/6748; H10D62/00; H10D62/80; H10D62/82; H10D62/822
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
81 words
A method of manufacturing an integrated circuit on a substrate, the method comprising: providing a fin area in the substrate; narrowing a width of the fin area by growing a sacrificial material on first sidewalls of the fin area and subsequently removing the sacrificial material to form second sidewalls on the fin area; providing silicon-germanium material on the second sidewalls of the fin area; providing a dielectric layer over the slicon-germanium material; and providing a gate conductor over the dielectric layer.
Claim 2
Independent Claim
81 words
A method of manufacturing an integrated circuit on a substrate, the method comprising: providing a fin area in the substrate; narrowing a width of the fin area by growing a sacrificial material on first sidewalls of the fin area and subsequently removing the sacrificial material to form second sidewalls on the fin area; providing silicon-germanium material on the second sidewalls of the fin area; providing a dielectric layer over the slicon-germanium material; and providing a gate conductor over the dielectric layer.
Claim 3
Dependent Claim
21 words
The method of claim 1 , further comprising: before the providing a fin area, providing a cap layer above the substrate.
Claim 4
Dependent Claim
13 words
The method of claim 2 , wherein the cap layer is silicon nitride.
Claim 5
Dependent Claim
17 words
The method of claim 2 , wherein the cap layer includes ends extending above the silicon-germanium material.
Claim 6
Dependent Claim
16 words
The method of claim 3 , wherein the dielectric layer is provided above the cap layer.
Claim 7
Dependent Claim
15 words
The method of claim 1 , wherein the silicon-germanium material is laterally grown by epitaxy.
Claim 8
Dependent Claim
21 words
The method of claim 1 , wherein the substrate includes a buried oxide layer and a single crystalline silicon thin film.
Claim 9
Dependent Claim
19 words
The method of claim 1 , wherein the gate conductor surrounds at least three sides of the fin area.
Claim 10
Dependent Claim
14 words
The method of claim 1 , wherein the dielectric layer is a silicon nitride.
Claim 11
Dependent Claim
12 words
The method of claim 1 , wherein the silicon-germanium material is undoped.
Claim 12
Independent Claim
75 words
A method of manufacturing an integrated circuit on a substrate, the method comprising: providing a fin area in the substrate, the fin area having sidewalls; providing silicon-germanium material on sidewalls of the fin area; providing a sacrificial oxide on the sidewalls of the fin area and removing the sacrificial oxide before providing the silicon-germanium material on the sidewalls; providing a dielectric layer over the silicon-germanium material; and providing a gate conductor over the dielectric layer.
Claim 13
Independent Claim
75 words
A method of manufacturing an integrated circuit on a substrate, the method comprising: providing a fin area in the substrate, the fin area having sidewalls; providing silicon-germanium material on sidewalls of the fin area; providing a sacrificial oxide on the sidewalls of the fin area and removing the sacrificial oxide before providing the silicon-germanium material on the sidewalls; providing a dielectric layer over the silicon-germanium material; and providing a gate conductor over the dielectric layer.
Claim 14
Dependent Claim
32 words
The method of claim 11 , wherein the gate conductor is disposed above the fin area, the gate conductor being above a top side and two lateral sides of the fin area.
Claim 15
Dependent Claim
20 words
The method of claim 11 , further comprising: providing a cap layer above the top side of the fin area.
Claim 16
Dependent Claim
36 words
The method of claim 11 , wherein a source region and a drain region are disposed on ends of the fin area and the gate conductor is disposed over a middle portion of the fin area.
Claim 17
Dependent Claim
16 words
The method of claim 11 , wherein the silicon-germanium material is part of a channel region.
Claim 18
Dependent Claim
14 words
The material of claim 15 , wherein the silicon-germanium material is 50-100 Å thick.
Claim 19
Dependent Claim
27 words
The method of claim 16 , further comprising: providing a cap layer, the cap layer being 100-200 Å wider than the fin area at the channel region.
Claim 20
Dependent Claim
66 words
A process of forming a transistor having a semiconductor-germanium channel region, the process comprising: forming an island of semiconductor material on a substrate, the island having a cap layer; growing oxide material on sidewalls of the island; removing the oxide material; forming a single crystalline semiconductor-germanium layer on the sidewalls of the island; and providing a gate structure over at least a portion of the island.
Claim 21
Dependent Claim
66 words
A process of forming a transistor having a semiconductor-germanium channel region, the process comprising: forming an island of semiconductor material on a substrate, the island having a cap layer; growing oxide material on sidewalls of the island; removing the oxide material; forming a single crystalline semiconductor-germanium layer on the sidewalls of the island; and providing a gate structure over at least a portion of the island.
Claim 22
Dependent Claim
29 words
The process of claim 18 , further comprising: providing a source region and a drain region on ends of the island, the ends being separated by the gate structure.
Claim 23
Dependent Claim
15 words
The process of claim 19 , wherein the removing is done by wet chemical etching.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-11-04 | 2006-05-06 | 2006-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-11-04 | 2010-05-06 | 2010-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-11-04 | 2014-05-06 | 2014-11-05 | $7700.00 | Window Closed / Lapsed |