US6475564B1
Expired / Lapsed
US
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Deposition of a siloxane containing polymer
Assignee: Tokyo Electron Ltd
•
Filing: 1999-01-20
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Granted: 2002-11-05
•
Expires: 2019-01-20
Abstract
Abstract An insulating layer is formed onto a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polymer on the surface of the semiconductor substrate. A deposition rate of the short-chain polymer is increased by farther reacting a substance which associates readily with the compound containing the peroxide bonding.
Inventors
- 👤 Steven Carter
- 👤 Christine Janet Shearer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 48
Claim 1
Independent Claim
72 words
A method of depositing a siloxane containing polymer on a substrate, which method comprises positioning the substrate in a chamber, introducing into the chamber in the gaseous or vapor state a silicon-containing compound, a further compound containing peroxide bonding, and a substance which associates readily with the compound containing peroxide bonding, and reacting the silicon-containing compound with the further compound and the associating substance to provide a polymer layer on the substrate.
Claim 2
Independent Claim
72 words
A method of depositing a siloxane containing polymer on a substrate, which method comprises positioning the substrate in a chamber, introducing into the chamber in the gaseous or vapor state a silicon-containing compound, a further compound containing peroxide bonding, and a substance which associates readily with the compound containing peroxide bonding, and reacting the silicon-containing compound with the further compound and the associating substance to provide a polymer layer on the substrate.
Claim 3
Dependent Claim
16 words
A method according to claim 1 , wherein the polymer layer is a short-chain polymer layer.
Claim 4
Dependent Claim
15 words
A method according to claim 1 , wherein the associating substance is an oxidizing agent.
Claim 5
Dependent Claim
16 words
A method according to claim 3 , wherein the polymer layer is a short-chain polymer layer.
Claim 6
Dependent Claim
22 words
A method according to claim 3 , wherein the oxidizing agent is selected from the group consisting of oxygen, ozone, and tetraethoxysilane.
Claim 7
Dependent Claim
13 words
A method according to claim 5 , wherein the oxidizing agent is oxygen.
Claim 8
Dependent Claim
38 words
A method according to claim 1 , wherein the silicon-containing compound is an organosilane of the general formula C x H y —Si n H a or (C x H y ) z Si n H a .
Claim 9
Dependent Claim
16 words
A method according to claim 7 , wherein the polymer layer is a short-chain polymer layer.
Claim 10
Dependent Claim
19 words
A method according to claim 1 , wherein the silicon-containing compound is of the general formula R—SiH 3 .
Claim 11
Dependent Claim
16 words
A method according to claim 9 wherein R is a methyl, ethyl, phenyl or vinyl group.
Claim 12
Dependent Claim
15 words
A method according to claim 10 , wherein R is a phenyl or methyl group.
Claim 13
Dependent Claim
25 words
A method according to claim 11 , wherein R is a methyl group, and a deposition rate of the polymer layer is about 1.1 μm/min.
Claim 14
Dependent Claim
16 words
A method according to claim 12 , wherein the polymer layer is a short-chain polymer layer.
Claim 15
Dependent Claim
25 words
A method according to claim 11 , wherein R is a Phenyl group and a deposition rate of the polymer layer is about 2700 Å/min.
Claim 16
Dependent Claim
16 words
A method according to claim 14 , wherein the polymer layer is a short-chain polymer layer.
Claim 17
Dependent Claim
18 words
A method according to claim 1 , wherein the silicon-containing compound is a silane or a higher silane.
Claim 18
Dependent Claim
19 words
A method according to claim 16 , wherein a deposition rate of the polymer layer is about 1.2 μm/min.
Claim 19
Dependent Claim
16 words
A method according to claim 1 , wherein the compound containing peroxide bonding is hydrogen peroxide.
Claim 20
Dependent Claim
16 words
A method according to claim 1 , further comprising introducing an additional gas into the chamber.
Claim 21
Dependent Claim
13 words
A method according to claim 19 , wherein the additional gas is nitrogen.
Claim 22
Dependent Claim
24 words
A method according to claim 19 , wherein a flow rate of the additional gas into the chamber is between 50 and 1000 Sccm.
Claim 23
Dependent Claim
29 words
A method according to claim 1 , wherein the associating substance is premixed with the compound containing peroxide bonding or the silicon-containing compound prior to introduction into the chamber.
Claim 24
Dependent Claim
20 words
A method according to claim 1 , wherein the associating substance is introduced into the chamber as a separate component.
Claim 25
Dependent Claim
24 words
A method according to claim 1 , wherein a flow rate of the silicon-containing compound into the chamber is between 20 and 145 Sccm.
Claim 26
Dependent Claim
26 words
A method according to claim 1 , wherein a flow rate of the compound containing peroxide bonding into the chamber is between 0.2 and 1.0 g/min.
Claim 27
Dependent Claim
23 words
A method according to claim 1 , wherein a flow rate of the associating substance into the chamber is up to 50 Sccm.
Claim 28
Dependent Claim
17 words
A method according to claim 1 , wherein a pressure in the chamber is below atmospheric pressure.
Claim 29
Independent Claim
62 words
A method for forming an insulating layer on a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a polymer on the surface of the semiconductor substrate, the method further comprising increasing a deposition rate of the polymer by further reacting a substance which associates readily with the compound containing the peroxide bonding.
Claim 30
Independent Claim
62 words
A method for forming an insulating layer on a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a polymer on the surface of the semiconductor substrate, the method further comprising increasing a deposition rate of the polymer by further reacting a substance which associates readily with the compound containing the peroxide bonding.
Claim 31
Dependent Claim
14 words
A method according to claim 28 , wherein the polymer is a short-chain polymer.
Claim 32
Dependent Claim
15 words
A method according to claim 28 , wherein the associating substance is an oxidizing agent.
Claim 33
Dependent Claim
14 words
A method according to claim 30 , wherein the polymer is a short-chain polymer.
Claim 34
Dependent Claim
22 words
A method according to claim 30 , wherein the oxidizing agent is selected from the group consisting of oxygen, ozone, and tetraethoxysilane.
Claim 35
Dependent Claim
13 words
A method according to claim 32 , wherein the oxidizing agent is oxygen.
Claim 36
Dependent Claim
38 words
A method according to claim 28 , wherein the silicon-containing compound is an organisilane of the general formula C x H y —Si n H a or (C x H y ) z Si n H a .
Claim 37
Dependent Claim
14 words
A method according to claim 34 , wherein the polymer is a short-chain polymer.
Claim 38
Dependent Claim
19 words
A method according to claim 28 , wherein the silicon-containing compound is of the general formula R—SiH 3 .
Claim 39
Dependent Claim
17 words
A method according to claim 36 , wherein R is a methyl, ethyl, phenyl or vinyl group.
Claim 40
Dependent Claim
15 words
A method according to claim 37 , wherein R is a phenyl or methyl group.
Claim 41
Dependent Claim
25 words
A method according to claim 38 , wherein R is a methyl group, and a deposition rate of the polymer layer is about 1.1 μm/min.
Claim 42
Dependent Claim
14 words
A method according to claim 39 , wherein the polymer is a short-chain polymer.
Claim 43
Dependent Claim
25 words
A method according to claim 38 , wherein R is a Phenyl group and a deposition rate of the polymer layer is about 2700 Å/min.
Claim 44
Dependent Claim
14 words
A method according to claim 41 , wherein the polymer is a short-chain polymer.
Claim 45
Dependent Claim
18 words
A method according to claim 28 , wherein the silicon-containing compound is a silane or a higher silane.
Claim 46
Dependent Claim
19 words
A method according to claim 43 , wherein a deposition rate of the polymer layer is about 1.2 μm/min.
Claim 47
Dependent Claim
16 words
A method according to claim 28 , wherein the compound containing peroxide bonding is hydrogen peroxide.
Claim 48
Dependent Claim
14 words
A method according to claim 45 , wherein the polymer is a short-chain polymer.
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