EP0742290A1
Expired / Lapsed
EP
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Chemical vapor deposition (CVD) of silicon dioxide films using oxygen-silicon source reactants and a free radical promoter
Assignee: Air Products and Chemicals Inc
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Filing: 1996-05-09
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Granted: —
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Expires: 2016-05-09
Abstract
Abstract A low temperature chemical vapor deposition method for depositing silicon dioxide comprises the steps of heating a substrate upon which deposition is desired in a vacuum and introducing, together with a silane and oxygen or oxygen-containing silane, a free radical promoter (e.g., di-t-butylperoxide, t-butylhydroperoxide, or n-butylnitrite) as a co-reactant. Suitably, the temperature is 250°C to 420°C and the pressure is 15 Pa to 275 Pa.
Inventors
- 👤 H. Edward O'neal
- 👤 John George Martin
- 👤 Morey Abraham Ring
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 05:20
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
34 words
A method for depositing silicon dioxide on a substrate in a chemical vapor deposition reactor utilizing oxygen-silicon source reactant(s), characterized in that the deposition is conducted in the presence of a free radical promoter.
Claim 2
Dependent Claim
88 words
A method according to Claim 1, comprising the steps of: maintaining conditions of temperature, pressure and rate of introduction of said oxygen-silicon source reactant(s) into said reactor for deposition of silicon dioxide on said substrate in said reactor; introducing a promoter that will generate free radicals into said reactor, said promoter having a lifetime approximately equal to the residence time of said reactant(s) in said reactor; and reacting said promoter in said chemical vapor deposition reactor with said oxygen-silicon source reactant(s) to deposit silicon dioxide on said substrate.
Claim 3
Dependent Claim
23 words
A method according to Claim 1 or Claim 2, wherein the free radical promoter is selected from peroxides, hydroperoxides, alkylnitrites and mixtures thereof.
Claim 4
Dependent Claim
18 words
A method according to Claim 3, wherein said promoter is selected from di-t-butylperoxide, t-butylhydroperoxide, n-butylnitrite and mixtures thereof.
Claim 5
Independent Claim
29 words
A method according to any one of the preceding claims, wherein the oxygen-silicon source reactant(s) is a single reactant which functions as a combined source of oxygen and silicon.
Claim 6
Independent Claim
28 words
A method according to any one of Claims 1 to 4, wherein the oxygen-silicon source reactant(s) comprises a discrete source of oxygen and a discrete source of silicon.
Claim 7
Dependent Claim
35 words
A method according to Claim 6, wherein the source of silicon comprises a silane selected from alkylsilanes, arylsilanes, alkoxysilanes and aralkylsilanes, wherein each alkyl-, aryl-, alkoxy- or aralkyl- moiety comprises from 2 - 6 carbons.
Claim 8
Dependent Claim
11 words
A method according to Claim 7, wherein the silane is diethylsilane.
Claim 9
Independent Claim
32 words
A method according to any one of the preceding claims, wherein said method is carried out by maintaining said reactor at a temperature in the range of 250°C (480°F) to 420°C (790°F).
Claim 10
Dependent Claim
23 words
A method according to Claim 9, wherein said method is carried out by maintaining said reactor at a temperature of approximately 250°C (480°F).
Claim 11
Independent Claim
29 words
A method according to any one of the preceding claims, wherein the reactor maintains a vacuum having a pressure of from 15 to 275 Pa (0.1 to 2.0 torr).
Claim 12
Independent Claim
35 words
A method according to any one of the preceding claims, wherein the volume flow ratio of said free radical promoter to the source of silicon in said oxygen-silicon source reactant(s) is between 0.1 and 1.0.
Claim 13
Independent Claim
36 words
A method according to any one of Claims 8 to 12, wherein said source of silicon is diethylsilane and said promoter is di-t-butylperoxide added in a volume flow ratio of 0.1 to 2.0 relative to diethylsilane.
Claim 14
Dependent Claim
15 words
A method according to Claim 13, wherein said substrate is heated to approximately 315°C (600°F).
Claim 15
Independent Claim
43 words
A method according to any one of Claims 8 to 12, wherein said source of silicon is diethylsilane and said promoter is n-butylnitrite added in a ratio of 0.2 to 0.4 relative to diethylsilane and said substrate is heated to approximately 270°C (518°F).
Claim 16
Independent Claim
33 words
A method according to any one of the preceding claims, wherein the source of oxygen is molecular oxygen in a volume flow ratio of 1.0 to 6.0 relative to the source of silicon.
References Cited (Backward Citations)
JPS5998726A
Cited
EP0519079A1
Cited
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