US6464780B1
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Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers
Assignee: Forschungszentrum Jülich
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Filing: 1999-01-27
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Granted: 2002-10-15
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Expires: 2019-01-27
Abstract
Abstract The invention relates to a method for the production of a monocrystalline layer on a substrate with a non-adapted lattice. To this end, a monocrystalline substrate with a buried amply defective layer and a monocrystalline layer produce thereon are used. The buried amply defective layer can be produced by hydrogen implantation.
Inventors
- 👤 Siegfried Mantl
- 👤 Bernhard Holländer
- 👤 Ralf Liedtke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:54
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/52; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/36; H10P14/38; H10P14/3822; H10P30/206; H10P30/208
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
88 words
A method of producing a monocrystalline layer structure, comprising the steps of: (a) depositing upon a surface of an unmatched-lattice monocrystalline substrate a monocrystalline layer; and (b) controlling defect development in said monocrystalline layer by forming below said surface in said monocrystalline substrate a buried defect-rich layer, thereby substantially preventing development of threading dislocations in said monocrystalline layer said buried defect-rich layer being formed in said monocrystalline substrate as close as possible to said surface without disturbing said surface by ion implantation of hydrogen into said monocrystalline substrate.
Claim 2
Independent Claim
88 words
A method of producing a monocrystalline layer structure, comprising the steps of: (a) depositing upon a surface of an unmatched-lattice monocrystalline substrate a monocrystalline layer; and (b) controlling defect development in said monocrystalline layer by forming below said surface in said monocrystalline substrate a buried defect-rich layer, thereby substantially preventing development of threading dislocations in said monocrystalline layer said buried defect-rich layer being formed in said monocrystalline substrate as close as possible to said surface without disturbing said surface by ion implantation of hydrogen into said monocrystalline substrate.
Claim 3
Dependent Claim
29 words
The method defined in claim 1 wherein the hydrogen implantation is effected with a dose in the range of 1×10 14 cm −2 to 1×10 17 cm −2 .
Claim 4
Dependent Claim
28 words
The method defined in claim 2 wherein said buried defect-rich layer is formed in said monocrystalline substrate prior to the application of said monocrystalline layer to said surface.
Claim 5
Dependent Claim
28 words
The method defined in claim 2 wherein said buried defect-rich layer is formed in said monocrystalline substrate subsequent to the application of said monocrystalline layer to said surface.
Claim 6
Dependent Claim
22 words
The method defined in claim 2 , further comprising the step of annealing the substrate during deposition of said monocrystalline layer thereon.
Claim 7
Dependent Claim
20 words
The method defined in claim 2 , further comprising the step of annealing the substrate with said monocrystalline layer thereon.
Claim 8
Independent Claim
95 words
A method of producing a monocrystalline layer structure, comprising the steps of: (a) depositing upon a surface of an unmatched-lattice monocrystalline substrate a monocrystalline layer; and (b) controlling defect development in said monocrystalline layer by forming below said surface in said monocrystalline substrate a buried defect-rich layer, thereby substantially preventing development of threading dislocations in said monocrystalline layer said buried defect-rich layer being formed in said monocrystalline substrate as close as possible to said surface without disturbing said surface by ion implantation of light ions or ions of a noble gas into said monocrystalline substrate.
Claim 9
Independent Claim
95 words
A method of producing a monocrystalline layer structure, comprising the steps of: (a) depositing upon a surface of an unmatched-lattice monocrystalline substrate a monocrystalline layer; and (b) controlling defect development in said monocrystalline layer by forming below said surface in said monocrystalline substrate a buried defect-rich layer, thereby substantially preventing development of threading dislocations in said monocrystalline layer said buried defect-rich layer being formed in said monocrystalline substrate as close as possible to said surface without disturbing said surface by ion implantation of light ions or ions of a noble gas into said monocrystalline substrate.
Claim 10
Independent Claim
127 words
A method of producing a monocrystalline layer structure, comprising the steps of: (a) depositing upon a surface of an unmatched-lattice monocrystalline substrate a monocrystalline layer; and (b) controlling defect development in said monocrystaline layer by forming below said surface in said monocrystalline substrate a buried defect-rich layer, thereby substantially preventing development of threading dislocations in said monocrystalline layer said buried defect-rich layer being formed in said monocrystalline substrate as close as possible to said surface without disturbing said surface by ion implantation into said monocrystalline substrate, and wherein, after a first ion implantation with ions of a first type to produce buried defects in said substrate a second ion implantation is carried out with ions of a second type different from the ions of said first type.
Claim 11
Independent Claim
127 words
A method of producing a monocrystalline layer structure, comprising the steps of: (a) depositing upon a surface of an unmatched-lattice monocrystalline substrate a monocrystalline layer; and (b) controlling defect development in said monocrystaline layer by forming below said surface in said monocrystalline substrate a buried defect-rich layer, thereby substantially preventing development of threading dislocations in said monocrystalline layer said buried defect-rich layer being formed in said monocrystalline substrate as close as possible to said surface without disturbing said surface by ion implantation into said monocrystalline substrate, and wherein, after a first ion implantation with ions of a first type to produce buried defects in said substrate a second ion implantation is carried out with ions of a second type different from the ions of said first type.
Claim 12
Dependent Claim
24 words
The method defined in claim 8 wherein said substrate is selected from the group which consists of Si, Ge, GaAs, SiC, sapphire, and InP.
Claim 13
Dependent Claim
89 words
An electrical or optoelectrical component in the form of a blue diode comprising a monocrystalline substrate and a monocrystalline layer on said substrate and made by a method comprising the steps of: (a) depositing upon a surface of an unmatched-lattice monocrystalline substrate a monocrystalline layer; and (b) controlling defect development in said monocrystalline layer by forming below said surface in said monocrystalline substrate a buried defect-rich layer, thereby substantially preventing development of threading dislocations in said monocrystalline layer, wherein said substrate is sapphire and said monocrystalline layer is GaN.
Claim 14
Dependent Claim
89 words
An electrical or optoelectrical component in the form of a blue diode comprising a monocrystalline substrate and a monocrystalline layer on said substrate and made by a method comprising the steps of: (a) depositing upon a surface of an unmatched-lattice monocrystalline substrate a monocrystalline layer; and (b) controlling defect development in said monocrystalline layer by forming below said surface in said monocrystalline substrate a buried defect-rich layer, thereby substantially preventing development of threading dislocations in said monocrystalline layer, wherein said substrate is sapphire and said monocrystalline layer is GaN.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-10-14 | 2006-04-15 | 2006-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-10-14 | 2010-04-15 | 2010-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-10-14 | 2014-04-15 | 2014-10-15 | $7700.00 | Window Closed / Lapsed |