US5633174A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Type silicon material with enhanced surface mobility
Assignee: Biota Corp
•
Filing: 1992-11-20
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Granted: 1997-05-27
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Expires: 2012-11-20
Abstract
Abstract A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.
Inventors
- 👤 Jianming Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:20
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10P95/00; H10P95/40; H10P95/402; H10P95/405; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/953
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
124 words
A method of forming a burled high resistivity layer comprising hydrogen bubbles beneath a surface portion of a silicon substrate having a crystal orientation, said method comprising: irradiating said region beneath said surface portion of said silicon substrate with a beam comprising hydrogen ions at a rate to implant a dose of hydrogen ions in a boundary layer of the irradiated region, applying photon energy through said surface portion to raise the temperature of said irradiated region for a period of time, and controlling said rate and said dose of hydrogen ions and said temperature of said surface portion over said period of time to order to convert said dose of hydrogen ions in said boundary layer into an insulating layer comprising hydrogen bubbles.
Claim 2
Independent Claim
124 words
A method of forming a burled high resistivity layer comprising hydrogen bubbles beneath a surface portion of a silicon substrate having a crystal orientation, said method comprising: irradiating said region beneath said surface portion of said silicon substrate with a beam comprising hydrogen ions at a rate to implant a dose of hydrogen ions in a boundary layer of the irradiated region, applying photon energy through said surface portion to raise the temperature of said irradiated region for a period of time, and controlling said rate and said dose of hydrogen ions and said temperature of said surface portion over said period of time to order to convert said dose of hydrogen ions in said boundary layer into an insulating layer comprising hydrogen bubbles.
Claim 3
Dependent Claim
25 words
The method recited in claim 1 in which said hydrogen ions are implanted at a dose of about 2.8×10 16 H + /cm 2 .
Claim 4
Dependent Claim
24 words
The method recited in claim 1 further comprising the step of annealing said surface layer at a second temperature to form single crystal silicon.
Claim 5
Dependent Claim
18 words
The method recited in claim 1 further comprising the step of fabricating semiconductor devices on said silicon wafer.
Claim 6
Dependent Claim
18 words
The method recited in claim 1 in which said photon energy is applied by means of a laser.
Claim 7
Independent Claim
137 words
A method of forming a burled high resistivity layer comprising hydrogen bubbles beneath a surface portion of a silicon substrate having a crystal orientation, said method comprising: irradiating said region beneath said surface portion of said silicon substrate with a beam comprising hydrogen ions at a rate to implant a dose of hydrogen ions in a boundary layer of the irradiated region, applying radiant energy through said surface portion to raise the temperature of said irradiated region for a period of time, and controlling said rate and said dose of hydrogen ions and said temperature of said surface portion over said period of time in order to convert said dose of hydrogen ions to said boundary layer into an insulating layer comprising bubbles in which said radiant energy is applied by means of Rapid Thermal Annealing (RTA).
Claim 8
Independent Claim
137 words
A method of forming a burled high resistivity layer comprising hydrogen bubbles beneath a surface portion of a silicon substrate having a crystal orientation, said method comprising: irradiating said region beneath said surface portion of said silicon substrate with a beam comprising hydrogen ions at a rate to implant a dose of hydrogen ions in a boundary layer of the irradiated region, applying radiant energy through said surface portion to raise the temperature of said irradiated region for a period of time, and controlling said rate and said dose of hydrogen ions and said temperature of said surface portion over said period of time in order to convert said dose of hydrogen ions to said boundary layer into an insulating layer comprising bubbles in which said radiant energy is applied by means of Rapid Thermal Annealing (RTA).
Claim 9
Dependent Claim
24 words
The method recited in claim 6 further comprising the step of annealing said surface layer at a second temperature to form single crystal silicon.
Claim 10
Dependent Claim
18 words
The method recited in claim 6 further comprising the step of fabricating semiconductor devices on said silicon wafer.
Claim 11
Dependent Claim
18 words
The method recited in claim 6 in which said radiant energy is applied by means of a laser.
References Cited (Backward Citations)
US4155779A
Cited
US4981815A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-05-26 | 2000-11-25 | 2001-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-05-26 | 2004-11-25 | 2005-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-05-26 | 2008-11-25 | 2009-05-27 | $7700.00 | Window Closed / Lapsed |