Abstract Improved devices with silicon to SiGe alloy heterojunctions are provided for in accordance with the following discoveries. X-ray topography and transmission electron microscopy were used to quantify misfit-dislocation spacings in as-grown Si 1-x Ge x films formed by Limited Reaction Processing (LRP), which is a chemical vapor deposition technique. These analysis techniques were also used to study dislocation formation during annealing of material grown by both LRP and by molecular beam epitaxy (MBE). The thickness at which misfit dislocations first appear in as-grown material was similar for both growth techniques. The thermal stability of capped and uncapped films was also investigated after rapid thermal annealing in the range of 625° to 1000° C. Significantly fewer misfit dislocations were observed in samples containing an epitaxial silicon cap. Some differences in the number of misfit dislocations generated in CVD and MBE films were observed after annealing uncapped layers at temperatures between 625° and 825° C.
A method comprising: obtaining a substrate; depositing a thin film of Silicon-Germanium alloy on said substrate so as to define a diode heterojunction therewith; capping said thin film with an epitaxial layer of silicon; and after said capping, adding and patterning at least one metallization layer using at least one processing step involving heating said thin film to above 600° C.
Claim 2
Independent Claim
61 words
A method comprising: obtaining a substrate; depositing a thin film of Silicon-Germanium alloy on said substrate so as to define a diode heterojunction therewith; capping said thin film with an epitaxial layer of silicon; and after said capping, adding and patterning at least one metallization layer using at least one processing step involving heating said thin film to above 600° C.
Claim 3
Dependent Claim
28 words
A method as recited in claim 1 wherein said alloy is characterized by the formula Si 1-X Ge X , where x is between about 0.15 and 0.21.
Claim 4
Dependent Claim
23 words
A method as recited in claim 1 wherein the thickness of said thin film is between about 50 nanometers and about 200 nanometers.