Patent EP0611921A2 successfully refreshed from Google Patents.
Patent US6452212B1 successfully refreshed from Google Patents.
US6452212B1
Expired / Lapsed
US
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Semiconductor device and method for operating the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1997-09-19
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Granted: 2002-09-17
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Expires: 2017-09-19
Abstract
Abstract A semiconductor device comprising an active layer made from a crystalline silicon formed on a substrate having an insulating surface; a gate insulating film formed on said active layer; and a source region and a drain region provided in contact with said active layer; wherein, said active layer generates photo carriers upon irradiation of a light, a part of the thus generated photo carriers having the opposite polarity with respect to that of the carriers flowing in the vicinity of the interface with the gate insulating film is temporarily accumulated within said active layer to change the resistance of the region of said active layer, and the light irradiated to said active layer is detected from the change in current flow between the source and the drain which occurs in accordance with the change in resistance in the region of said active region. The semiconductor device according to the present invention is particularly an image sensor device which amplifies an optical signal and which outputs it as an electric signal.
Inventors
- 👤 Mitsufumi Codama
- 👤 Kazushi Sugiura
- 👤 Yukio Yamauchi
- 👤 Naoya Sakamoto
- 👤 Michio Arai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 09:43
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/40; H10D86/431; H10D86/60; H10F; H10F39/00; H10F39/011; H10F39/026; H10F39/80; H10F39/803
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
153 words
A semiconductor image sensor device comprising a plurality of thin film transistors provided on an insulating surface, wherein, a part of said plurality of thin film transistors comprises an image sensor element which outputs an electric signal in accordance with a light irradiated thereto, and another part of said plurality of thin film transistors comprises a driver element to drive said image sensor element, wherein said image sensor element and said driver element have respective active layers made from the same semiconductor film, wherein each of said plurality of thin film transistors includes a semiconductor island having an upper surface and side surfaces and a gate insulating film covering said upper surface and side surfaces of said semiconductor island, and wherein said gate insulating film of said part of the plurality of thin film transistor is thicker than said gate insulating film of said another part of the plurality of thin film transistor.
Claim 2
Dependent Claim
153 words
A semiconductor image sensor device comprising a plurality of thin film transistors provided on an insulating surface, wherein, a part of said plurality of thin film transistors comprises an image sensor element which outputs an electric signal in accordance with a light irradiated thereto, and another part of said plurality of thin film transistors comprises a driver element to drive said image sensor element, wherein said image sensor element and said driver element have respective active layers made from the same semiconductor film, wherein each of said plurality of thin film transistors includes a semiconductor island having an upper surface and side surfaces and a gate insulating film covering said upper surface and side surfaces of said semiconductor island, and wherein said gate insulating film of said part of the plurality of thin film transistor is thicker than said gate insulating film of said another part of the plurality of thin film transistor.
Claim 3
Dependent Claim
17 words
A device according to claim 1 wherein said insulating surface is a surface of an insulating substrate.
Claim 4
Dependent Claim
21 words
A device according to claim 1 wherein said insulating surface is a surface of an insulating film provided on a substrate.
Claim 5
Dependent Claim
40 words
A device according to claim 1 wherein the thin film transistor as said image sensor element comprises: an active layer made from a crystalline silicon provided on said insulating surface; and a gate insulating film provided on said active layer.
Claim 6
Dependent Claim
123 words
A semiconductor image sensor device comprising: a plurality of photo-sensitive thin film transistors on an insulated surface of a substrate; and a plurality of driving thin film transistors on the insulated surface for driving said photo-sensitive thin film transistors, each of said photo-sensitive thin film transistors and said driving thin film transistors comprising: a semiconductor island formed on the insulated surface of the substrate, said semiconductor island having an upper surface and side surfaces; a gate insulating film covering said upper surface and side surfaces of said semiconductor island; a gate electrode formed on said gate insulating film, wherein a thickness of said gate insulating film of said photo-sensitive thin film transistors is thicker than a thickness of said driving thin film transistors.
Claim 7
Dependent Claim
123 words
A semiconductor image sensor device comprising: a plurality of photo-sensitive thin film transistors on an insulated surface of a substrate; and a plurality of driving thin film transistors on the insulated surface for driving said photo-sensitive thin film transistors, each of said photo-sensitive thin film transistors and said driving thin film transistors comprising: a semiconductor island formed on the insulated surface of the substrate, said semiconductor island having an upper surface and side surfaces; a gate insulating film covering said upper surface and side surfaces of said semiconductor island; a gate electrode formed on said gate insulating film, wherein a thickness of said gate insulating film of said photo-sensitive thin film transistors is thicker than a thickness of said driving thin film transistors.
Claim 8
Dependent Claim
13 words
A device according to claim 5 wherein said semiconductor island comprises crystalline silicon.
Claim 9
Dependent Claim
14 words
A device according to claim 5 wherein said gate insulating film comprises silicon oxide.
References Cited (Backward Citations)
US4409724A
Cited
US4823180A
Cited
US5365079A
Cited
US4886962A
Cited
JPS63260167A
Cited
US4851370A
Cited
JPH04206969A
Cited
US5262654A
Cited
JPH04233774A
Cited
US5343066A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-09-16 | 2006-03-18 | 2006-09-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-09-16 | 2010-03-18 | 2010-09-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-09-16 | 2014-03-18 | 2014-09-17 | $7700.00 | Window Closed / Lapsed |