Making semiconductor devices having stacked dies with biased back surfaces

Claim 2

A semiconductor device, comprising: a substrate having a plurality of electrically conductive leads arrayed around an electrically conductive die-mounting pad; a first semiconductor die mounted on the substrate, the first die having a front surface with a plurality of wire bonding pads arrayed around a periphery thereof, and an opposite back surface mounted opposed to and in electrical connection with the die-mounting pad of the substrate; a uniformly thick spacer mounted on the first die, the spacer having an outer periphery smaller than an inner periphery of the wire bonding pads on the first die, a front surface, and an opposite back surface mounted opposed to and electrically isolated from the front surface of the first die, and such that the spacer is located inside the inner periphery of the wire bonding pads thereon; at least one electrically conductive wire having opposite first and second ends, the first end being bonded to a first lead of the substrate, the die-mounting pad, or a first wire bonding pad on the first die, and the second end being bonded to the front surface of the spacer; and, a second semiconductor die mounted on the spacer with a layer of an electrically conductive material, the second die having a front surface with a plurality of wire bonding pads arrayed around a periphery thereof, and an opposite back surface being mounted opposed to and in electrical connection with the front surface of the spacer, and such that the second end of the at least one first conductive wire is embedded in the conductive layer.

Claim 3

The semiconductor device of claim 1 , further comprising means for electrically connecting the die-mounting pad to a second lead of the substrate.

Claim 4

The semiconductor device of claim 1 , further comprising a fused lead, a second conductive wire, or a circuit trace electrically connecting the die-mounting pad to a second lead of the substrate.

Claim 5

The semiconductor device of claim 1 , wherein the spacer comprises a dielectric material.

Claim 6

The semiconductor device of claim 1 , wherein the second end of the at least one conductive wire is bonded to the front surface of the spacer with a metallurgical bond.

Claim 7

The semiconductor device of claim l, wherein the second end of the at least one conductive wire is bonded to the front surface of the spacer with a non-metallurgical bond.

Claim 8

The semiconductor device of claim 1 , wherein the substrate comprises a metal lead frame, or a patterned metal laminated with an epoxy-fiberglass composite, a ceramic, or a resin tape.

Claim 9

A semiconductor device, comprising: a substrate having a plurality of electrically conductive leads arrayed around an electrically conductive die-mounting pad; a first semiconductor die mounted on the substrate, the first die having a front surface with a plurality of wire bonding pads arrayed around a periphery thereof, and an opposite back surface being mounted opposed to and in electrical connection with the die-mounting pad of the substrate; a uniformly thick spacer mounted on the first die, the spacer having an outer periphery smaller than an inner periphery of the wire bonding pads on the first die, a front surface, and an opposite back surface being mounted opposed to and electrically isolated from the front surface of the first die, and such that the spacer is located inside the inner periphery of the wire bonding pads thereon; at least one electrically conductive wire having opposite first and second ends, the first end being bonded at one side of the spacer to a first lead of the substrate, the die-mounting pad, or a first wire bonding pad on the first die, and the second end being bonded at another side of the spacer to a second lead of the substrate, the die-mounting pad, or a second wire bonding pad on the first die, at least a portion of the at least one conductive wire extending across the front surface of the spacer; and, a second semiconductor die mounted on the spacer with a layer of an electrically conductive material, the second die having a front surface with a plurality of wire bonding pads arrayed around a periphery thereof, and an opposite back surface being mounted opposed to and in electrical connection with the front surface of the spacer, and such that the portion of the at least one conductive wire extending across the front surface of the spacer is embedded in the conductive layer.

Claim 10

A semiconductor device, comprising: a substrate having a plurality of electrically conductive leads arrayed around an electrically conductive die-mounting pad; a first semiconductor die mounted on the substrate, the first die having a front surface with a plurality of wire bonding pads arrayed around a periphery thereof, and an opposite back surface being mounted opposed to and in electrical connection with the die-mounting pad of the substrate; a uniformly thick spacer mounted on the first die, the spacer having an outer periphery smaller than an inner periphery of the wire bonding pads on the first die, a front surface, and an opposite back surface being mounted opposed to and electrically isolated from the front surface of the first die, and such that the spacer is located inside the inner periphery of the wire bonding pads thereon; at least one electrically conductive wire having opposite first and second ends, the first end being bonded at one side of the spacer to a first lead of the substrate, the die-mounting pad, or a first wire bonding pad on the first die, and the second end being bonded at another side of the spacer to a second lead of the substrate, the die-mounting pad, or a second wire bonding pad on the first die, at least a portion of the at least one conductive wire extending across the front surface of the spacer; and, a second semiconductor die mounted on the spacer with a layer of an electrically conductive material, the second die having a front surface with a plurality of wire bonding pads arrayed around a periphery thereof, and an opposite back surface being mounted opposed to and in electrical connection with the front surface of the spacer, and such that the portion of the at least one conductive wire extending across the front surface of the spacer is embedded in the conductive layer.

Claim 11

The semiconductor device of claim 8 , further comprising means for electrically connecting the die-mounting pad to a second lead of the substrate.

Claim 12

The semiconductor device of claim 8 , further comprising a fused lead, a second conductive wire, or a circuit trace electrically connecting the die-mounting pad to a second lead of the substrate.

Claim 13

The semiconductor device of claim 8 , wherein the spacer comprises of a dielectric material.

Claim 14

A semiconductor device, comprising: a substrate having a plurality of electrically conductive portions; a first semiconductor die having a first surface mounted on and electrically coupled to one of the electrically conductive portions of the substrate and an opposite second surface including a plurality of bond pads; a spacer having a first surface and an opposite second surface, wherein the first surface is on and in a nonelectrically conductive connection with the second surface of the first semiconductor die, and said spacer is disposed entirely within a perimeter of the second surface and within the bond pads thereof, a second semiconductor die having a first surface juxtaposed with and attached to the second surface of the spacer with an electrically conductive adhesive layer; a first metal wire having a first portion on the second surface of the spacer under the juxtaposed first surface of the second semiconductor die, and a first end electrically coupled to one of the electrically conductive portions of the substrate, wherein said first portion is embedded in the electrically conductive adhesive layer and is electrically coupled to the first surface of the second semiconductor die by the electrically conductive adhesive layer.

Claim 15

A semiconductor device, comprising: a substrate having a plurality of electrically conductive portions; a first semiconductor die having a first surface mounted on and electrically coupled to one of the electrically conductive portions of the substrate and an opposite second surface including a plurality of bond pads; a spacer having a first surface and an opposite second surface, wherein the first surface is on and in a nonelectrically conductive connection with the second surface of the first semiconductor die, and said spacer is disposed entirely within a perimeter of the second surface and within the bond pads thereof, a second semiconductor die having a first surface juxtaposed with and attached to the second surface of the spacer with an electrically conductive adhesive layer; a first metal wire having a first portion on the second surface of the spacer under the juxtaposed first surface of the second semiconductor die, and a first end electrically coupled to one of the electrically conductive portions of the substrate, wherein said first portion is embedded in the electrically conductive adhesive layer and is electrically coupled to the first surface of the second semiconductor die by the electrically conductive adhesive layer.

Claim 16

The semiconductor device of claim 12 , wherein the first portion of the first metal wire includes a second end of the metal wire, and said second end is connected to the second surface of the spacer with a non-metallurgical bond.

Claim 17

The semiconductor device of claim 12 , wherein the first metal wire has a second end opposite the first end, the first portion is between the first end and the second end, and the second end is electrically coupled to another one of the electrically conductive portions of the substrate.

Claim 18

The semiconductor device of claim 12 , wherein the first portion of the first metal wire includes a second end of the metal wire, and said second end is connected to the second surface of the spacer.

Claim 19

A semiconductor device, comprising: a substrate having a plurality of electrically conductive portions; a first semiconductor die and a second semiconductor die, said semiconductor dies being coupled to the substrate and vertically stacked with a spacer between them; a metal wire having opposed first and second ends and a central portion therebetween, wherein the first and second ends are electrically coupled to separate ones of the electrically conductive portions of the substrate, and the central portion overlies the spacer between juxtaposed surfaces of the spacer and the second semiconductor die; and an adhesive material coupling the spacer to the second semiconductor die, wherein the central portion of the metal wire contacts the adhesive material.

Claim 20

A semiconductor device, comprising: a substrate having a plurality of electrically conductive portions; a first semiconductor die and a second semiconductor die, said semiconductor dies being coupled to the substrate and vertically stacked with a spacer between them; a metal wire having opposed first and second ends and a central portion therebetween, wherein the first and second ends are electrically coupled to separate ones of the electrically conductive portions of the substrate, and the central portion overlies the spacer between juxtaposed surfaces of the spacer and the second semiconductor die; and an adhesive material coupling the spacer to the second semiconductor die, wherein the central portion of the metal wire contacts the adhesive material.

Claim 21

The semiconductor device of claim 16 , wherein the adhesive material is electrically conductive, and the adhesive material electrically couples the central portion to the second semiconductor die.

Claim 22

The semiconductor device of claim 17 , wherein the first semiconductor die is on and electrically coupled to a second one of the electrically conductive portions of the substrate.

Claim 23

The semiconductor device of claim 17 , wherein the spacer is in a nonelectrically conductive connection with a juxtaposed surface of the first semiconductor die, and an opposite surface of the first semiconductor die is on and electrically coupled to a second one of the electrically conductive portions of the substrate.

Claim 24

The semiconductor device of claim 16 , wherein the spacer is in a nonelectrically conductive connection with a juxtaposed surface of the first semiconductor die, and an opposite surface of the first semiconductor die is electrically coupled to a second one of the electrically conductive portions of the substrate.