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US6423625B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Method of improving the bondability between Au wires and Cu bonding pads

Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1999-08-30
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Granted: 2002-07-23
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Expires: 2019-08-30
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Abstract

Abstract Cu, for its rather loe resistivity, will be widely used in sub-quarter micron meter ULSI devices. However, it is well known that Cu is easy to be corroded as exposed in air. In packaging of chips the bonding pads making of Cu will thus oxides. In addition, the reaction between Au-ball and Cu pads is very poor. On the other hand, a native AlOx layer, about 3-4 nm in thickness, will form as Al exposes in air; the formed layer is inert and is capable of protecting Al from corrosion. Furthermore, the reaction between Au-ball and Al was very well. Therefore, with the methods of the present invention, Al or AlCu as a glue and protection layer is implemented on Cu bonding pads for successful Au wiring.

Inventors

  • 👤 Syun-Ming Jang
  • 👤 Mong-Song Liang
  • 👤 Chen-Hua Yu
  • 👤 Chung-Shi Liu
  • 👤 Jane-Bai Lai

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 11:35
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W72/00; H10W72/01; H10W72/012; H10W72/019; H10W72/20; H10W72/251; H10W72/29; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952; H10W74/00

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 60 words
A method of improving the bondability between Au wires and Cu pads, used in semiconductor manufacturing process, said method comprising the steps of: etching a passivation layer to expose the underlying Cu bonding pads of a top level metallization; depositing a tungsten (W) barrier layer upon said Cu bonding pads; and depositing an Al layer on said W barrier layer.
Claim 2
Independent Claim 60 words
A method of improving the bondability between Au wires and Cu pads, used in semiconductor manufacturing process, said method comprising the steps of: etching a passivation layer to expose the underlying Cu bonding pads of a top level metallization; depositing a tungsten (W) barrier layer upon said Cu bonding pads; and depositing an Al layer on said W barrier layer.
Claim 3
Dependent Claim 20 words
A method according to claim 1 , wherein said W barrier layer is selectively deposited upon said Cu bonding pads.
Claim 4
Dependent Claim 18 words
A method according to claim 1 , wherein said W barrier layer is deposited by a CVD process.
Claim 5
Dependent Claim 20 words
A method according to claim 1 , wherein the thickness of said W barrier layer is thinner than 20 nm.
Claim 6
Dependent Claim 27 words
A method according to claim 1 , wherein the steps of said depositing said Al layer is selectively depositing said Al layer upon said W barrier layer.
Claim 7
Dependent Claim 21 words
A method according to claim 1 , said method further comprising the step of roughening the surface of said passivation layer.
Claim 8
Dependent Claim 18 words
A method according to claim 2 , wherein said W barrier layer is deposited by a CVD process.
Claim 9
Dependent Claim 37 words
A method according to claim 1 , said method further comprising replacing the step of depositing said Al layer on said W barrier layer with the step of depositing an AlCu layer on said W barrier layer.
Claim 10
Dependent Claim 27 words
A method according to claim 8 , wherein the step of said depositing said AlCu layer is selectively depositing said AlCu layer upon said W barrier layer.

References Cited (Backward Citations)

US5773359A Cited
US5937320A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2005-07-22 2006-01-21 2006-07-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2009-07-22 2010-01-21 2010-07-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2013-07-22 2014-01-21 2014-07-23 $7700.00 Window Closed / Lapsed

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