Patent US1777984A successfully refreshed from Google Patents.
Patent US6423614B1 successfully refreshed from Google Patents.
US6423614B1
Expired / Lapsed
US
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Method of delaminating a thin film using non-thermal techniques
Assignee: Intel Corp
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Filing: 1998-06-30
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Granted: 2002-07-23
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Expires: 2018-06-30
Abstract
Abstract A method for forming an integrated circuit is provided. A semiconductor film is formed onto a first substrate. A metal film is formed onto a second substrate. The second substrate is bonded with the metal film onto the thin film of the first substrate. A first layer of transistors is formed onto the film. The second substrate is removed at a temperature within a low temperature range. The semiconductor film is bonded with the first layer of transistors onto a second layer of transistors of a third substrate.
Inventors
- 👤 Brian S. Doyle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:37
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10D; H10D86/00; H10D86/01; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
86 words
A method for making an integrated circuit the method comprising: a. forming a semiconductor film onto a first substrate; b. forming a metal film onto a second substrate; c. bonding said second substrate with said metal film onto said semiconductor film of said first substrate; d. forming a first layer of active devices onto said semiconductor film; e. removing said second substrate; and f. bonding said semiconductor film with said first layer of active devices to a second layer of active devices of a third substrate.
Claim 2
Independent Claim
86 words
A method for making an integrated circuit the method comprising: a. forming a semiconductor film onto a first substrate; b. forming a metal film onto a second substrate; c. bonding said second substrate with said metal film onto said semiconductor film of said first substrate; d. forming a first layer of active devices onto said semiconductor film; e. removing said second substrate; and f. bonding said semiconductor film with said first layer of active devices to a second layer of active devices of a third substrate.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said semiconductor film is formed by way of ion implantation.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein said metal film includes a noble metal.
Claim 5
Dependent Claim
23 words
The method of claim 1 further including, after removing said second substrate, bonding a carrier wafer onto said first layer of active devices.
Claim 6
Dependent Claim
41 words
The method of claim 4 wherein said bonding of said semiconductor film with said layer of active devices includes placing said carrier wafer with said first layer of active devices onto said second layer of active devices of said third substrate.
Claim 7
Dependent Claim
28 words
The method of claim 5 wherein said bonding of said semiconductor film further includes aligning said first layer of active devices with said second layer of active devices.
Claim 8
Dependent Claim
18 words
The method of claim 1 wherein said removing said second substrate is performed by way of hydrogen annealing.
Claim 9
Dependent Claim
16 words
The method of claim 2 further including, after bonding said second substrate, removing said first substrate.
Claim 10
Dependent Claim
32 words
The method of claim 8 wherein said first substrate is removed by heating an assembly that includes said first substrate with said semiconductor film and said second substrate with said metal film.
Claim 11
Dependent Claim
36 words
The method of claim 1 wherein, before said bonding of said semiconductor film with said first layer of active devices to a second layer of active devices, a carrier wafer is bonded to said semiconductor film.
Claim 12
Dependent Claim
25 words
The method of claim 1 wherein after forming a semiconductor film onto a first substrate a first oxide film is formed on said semiconductor film.
Claim 13
Dependent Claim
20 words
The method of claim 1 wherein said metal film is formed onto second oxide film deposited onto said second semiconductor.
Claim 14
Dependent Claim
18 words
The method of claim 1 wherein said first layer of active devices is replaced by a patterned layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-07-22 | 2006-01-21 | 2006-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-07-22 | 2010-01-21 | 2010-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-07-22 | 2014-01-21 | 2014-07-23 | $7700.00 | Window Closed / Lapsed |