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US6420095B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Manufacture of semiconductor device using A-C anti-reflection coating

Assignee: Fujitsu Ltd
•
Filing: 1999-12-20
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Granted: 2002-07-16
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Expires: 2019-12-20
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Abstract

Abstract A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I sw =Iδ/I ave to 0.2 or smaller, where I ave is an average value of light intensity in the photoresist film, and Iδ is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.

Inventors

  • 👤 Eiichi Kawamura
  • 👤 Teruyoshi Yao
  • 👤 Nobuhisa Naori
  • 👤 Koichi Hashimoto
  • 👤 Masaharu Kobayashi
  • 👤 Tadasi Oshima

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 19:36
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 70 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a substrate having an exposed amorphous carbon film on at least part of a surface of said substrate; and removing said amorphous carbon film by dry etching at a substrate temperature of 70 to 450° C. by using at least one of gases selected from the group consisting of reducing fluoride gas, halogen gas, and gas containing oxygen.
Claim 2
Independent Claim 70 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a substrate having an exposed amorphous carbon film on at least part of a surface of said substrate; and removing said amorphous carbon film by dry etching at a substrate temperature of 70 to 450° C. by using at least one of gases selected from the group consisting of reducing fluoride gas, halogen gas, and gas containing oxygen.
Claim 3
Dependent Claim 26 words
A method according to claim 1 , wherein said reducing fluoride gas is SF 6 , NF 3 , CF 4 , or CHF 3 .
Claim 4
Dependent Claim 22 words
A method according to claim 1 , wherein said halogen gas is Cl 2 , Br 2 , or I 2 .
Claim 5
Dependent Claim 21 words
A method according to claim 1 , wherein said gas containing oxygen is O 2 , CO, or CO 2 .
Claim 6
Dependent Claim 26 words
A method according to claim 1 , wherein said step of removing said amorphous carbon film etches said amorphous carbon film by electron cyclotron resonance etching.
Claim 7
Dependent Claim 25 words
A method according to claim 1 , wherein said step of removing said amorphous carbon film etches said amorphous carbon film by reactive ion etching.
Claim 8
Dependent Claim 26 words
A method according to claim 1 , wherein said step of removing said amorphous carbon film etches said amorphous carbon film by down-flow of microwave plasma.
Claim 9
Dependent Claim 25 words
A method according to claim 1 , wherein said step of removing said amorphous carbon film etches said amorphous carbon film by high frequency plasma.
Claim 10
Dependent Claim 30 words
A method according to claim 1 , wherein said step of preparing said substrate includes the step of depositing an amorphous carbon film on said substrate by chemical vapor deposition.

References Cited (Backward Citations)

JPS60235426A Cited
DE4138999A1 Cited
US5437961A Cited
US5472829A Cited
JPH06342744A Cited
US5669979A Cited
US5691237A Cited
US5866920A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2005-07-15 2006-01-14 2006-07-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2009-07-15 2010-01-14 2010-07-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2013-07-15 2014-01-14 2014-07-16 $7700.00 Window Closed / Lapsed

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