Manufacture of semiconductor device using A-C anti-reflection coating
Abstract
Abstract A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I sw =Iδ/I ave to 0.2 or smaller, where I ave is an average value of light intensity in the photoresist film, and Iδ is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.
Inventors
- 👤 Eiichi Kawamura
- 👤 Teruyoshi Yao
- 👤 Nobuhisa Naori
- 👤 Koichi Hashimoto
- 👤 Masaharu Kobayashi
- 👤 Tadasi Oshima
Bibliographic Details
Claims Analysis
Total Claims: 10References Cited (Backward Citations)
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