Patent US6407422B1 successfully refreshed from Google Patents.
US6407422B1
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Oxygen diffusion blocking semiconductor capacitor
Assignee: Sony Corp
•
Filing: 2000-04-24
•
Granted: 2002-06-18
•
Expires: 2020-04-24
Abstract
Abstract Provided is a semiconductor memory device in which defective contact, deterioration in transistor characteristics and other problems are solved with a thermally stable, conductive diffusion barrier layer against oxygen, and against constituent elements in a plug material and a lower electrode, formed at the interface between a plug and the lower electrode made of a noble metal. The semiconductor memory device comprises a dielectric capacitor of a stacked structure including a first electrode (a lower electrode), a dielectric film and a second electrode (an upper electrode) and a conductive plug connected to the lower electrode, wherein the lower electrode connected to the conductive plug includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and the metal suboxide layer and the diffusion barrier layer are stacked in the order from the conductive plug side of the lower electrode.
Inventors
- 👤 Katsuaki Asano
- 👤 Yasuyuki Ito
- 👤 Shun Mitarai
- 👤 Akihiko Ochiai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:53
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D1/682; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 73
Claim 1
Independent Claim
73 words
A semiconductor memory device, comprising: a dielectric capacitor obtained by stacking a first electrode, a dielectric film and a second electrode; and a conductive plug connected to one of the first or second electrodes of the dielectric capacitor, wherein the one of the first and second electrodes includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and the metal suboxide layer is a vanadium suboxide layer.
Claim 2
Dependent Claim
73 words
A semiconductor memory device, comprising: a dielectric capacitor obtained by stacking a first electrode, a dielectric film and a second electrode; and a conductive plug connected to one of the first or second electrodes of the dielectric capacitor, wherein the one of the first and second electrodes includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and the metal suboxide layer is a vanadium suboxide layer.
Claim 3
Dependent Claim
38 words
The semiconductor memory device according to claim 1 , wherein the metal suboxide layer and the diffusion barrier layer are stacked in the order from a conductive plug side of the one electrode connected to the conductive plug.
Claim 4
Dependent Claim
20 words
The semiconductor memory device according to claim 1 , wherein the metal suboxide layer has a barrier effect against silicon.
Claim 5
Dependent Claim
41 words
The semiconductor memory device according to claim 1 , wherein the diffusion barrier layer is made of at least one selected from the group consisting of iridium, ruthenium, rhodium, rhenium and osmium, and oxides of iridium, ruthenium, rhodium, rhenium and osmium.
Claim 6
Dependent Claim
41 words
The semiconductor memory device according to claim 1 , wherein the conductive plug is made of impurity doped polysilicon and a silicide film is formed at a contact interface of the conductive plug with the electrode connected to the conductive plug.
Claim 7
Dependent Claim
22 words
The semiconductor memory device according to claim 1 , wherein the dielectric film is made of an ABO 3 perovskite structure compound.
Claim 8
Dependent Claim
60 words
The semiconductor memory device according to claim 2 , wherein the dielectric film includes at least one material selected from the group consisting of materials expressed by chemical formulae of SrTiO 3 , (Ba,Sr)TiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)TiO 3 , (Pb,La)(Zr,Ti)O 3 , BaTiO 3 , LiNbO 3 , LiTaO 3 and YMnO 3 .
Claim 9
Dependent Claim
22 words
The semiconductor memory device according to claim 1 , wherein the dielectric film is made of a bismuth layered perovskite structure compound.
Claim 10
Dependent Claim
86 words
The semiconductor memory device according to claim 8 , wherein the dielectric film includes at least one material selected from the group consisting of materials expressed by chemical formulae of SrBi 2 Ta 2 O 9 , SrBi 2 Nb 2 O 9 , SrBi 2 (Ta,Nb) 2 O 9 , Bi 4 Ti 3 O 12 , SrBi 4 Ti 4 O 15 , SrBi 4 (Ti,Zr) 4 O 15 , BaBi 2 Ta 2 O 9 and BaBi 2 Nb 2 O 9 .
Claim 11
Dependent Claim
80 words
The semiconductor memory device according to claim 1 , wherein the metal suboxide layer is constructed of a first layer and a second layer of different materials, the first layer is the vanadium suboxide layer having a barrier effect against silicon and having conductiveness, the second layer of the metal suboxide layer comprises a noble metal layer that includes oxygen and at least one noble metal selected from the group consisting of iridium, ruthenium, rhodium, rhenium, osmium, palladium and platinum.
Claim 12
Dependent Claim
78 words
The semiconductor memory device according to claim 10 , wherein the noble metal layer includes a transition metal selected from the group consisting of hafnium, tantalum, zirconium, vanadium, molybdenum and tungsten and has a composition expressed by a chemical formula M1aM2bOc, wherein M1 represents the noble metal; M2 represents the transition metal, and O represents Oxygen, and a, b, and c represent contents of respective metals, provided that the following relations are satisfied: 0.4<a<0.9, 0.02<b<0.15, 0.04<c and a+b+c=1.
Claim 13
Dependent Claim
96 words
A semiconductor memory device, comprising: a dielectric capacitor obtained by stacking a first electrode, a dielectric film and a second electrode; and a conductive plug connected to one of the first or second electrodes of the dielectric capacitor, wherein the one of the first and second electrodes includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and wherein the diffusion barrier layer is made of at least one selected from the group consisting of iridium, ruthenium, rhodium, rhenium and osmium, and oxides of iridium, ruthenium, rhodium, rhenium and osmium.
Claim 14
Dependent Claim
96 words
A semiconductor memory device, comprising: a dielectric capacitor obtained by stacking a first electrode, a dielectric film and a second electrode; and a conductive plug connected to one of the first or second electrodes of the dielectric capacitor, wherein the one of the first and second electrodes includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and wherein the diffusion barrier layer is made of at least one selected from the group consisting of iridium, ruthenium, rhodium, rhenium and osmium, and oxides of iridium, ruthenium, rhodium, rhenium and osmium.
Claim 15
Dependent Claim
38 words
The semiconductor memory device according to claim 12 , wherein the metal suboxide layer and the diffusion barrier layer are stacked in the order from a conductive plug side of the one electrode connected to the conductive plug.
Claim 16
Dependent Claim
19 words
The semiconductor memory device according to claim 12 , wherein the metal suboxide/layer has a barrier effect against silicon.
Claim 17
Dependent Claim
19 words
The semiconductor memory device according to claim 12 , wherein the metal suboxide layer is a vanadium suboxide layer.
Claim 18
Dependent Claim
41 words
The semiconductor memory device according to claim 12 , wherein the conductive plug is made of impurity doped polysilicon and a silicide film is formed at a contact interface of the conductive plug with the electrode connected to the conductive plug.
Claim 19
Dependent Claim
22 words
The semiconductor memory device according to claim 12 , wherein the dielectric film is made of an ABO 3 perovskite structure compound.
Claim 20
Dependent Claim
60 words
The semiconductor memory device according to claim 17 , wherein the dielectric film includes at least one material selected from the group consisting of materials expressed by chemical formulae of SrTiO 3 , (Ba,Sr)TiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)TiO 3 , (Pb,La)(Zr,Ti)O 3 , BaTiO 3 , LiNbO 3 , LiTaO 3 and YMnO 3 .
Claim 21
Dependent Claim
22 words
The semiconductor memory device according to claim 12 , wherein the dielectric film is made of a bismuth layered perovskite structure compound.
Claim 22
Dependent Claim
86 words
The semiconductor memory device according to claim 19 , wherein the dielectric film includes at least one material selected from the group consisting of materials expressed by chemical formulae of SrBi 2 Ta 2 O 9 , SrBi 2 Nb 2 O 9 , SrBi 2 (Ta,Nb) 2 O 9 , Bi 4 Ti 3 O 12 , SrBi 4 Ti 4 O 15 , SrBi 4 (Ti,Zr) 4 O 15 , BaBi 2 Ta 2 O 9 and BaBi 2 Nb 2 O 9 .
Claim 23
Dependent Claim
94 words
The semiconductor memory device according to claim 12 , wherein the metal suboxide layer is constructed of a first layer and a second layer of different materials, the first layer includes the metal selected from the group consisting of vanadium, chromium, iron, and rhenium such that the first layer has a barrier effect against silicon and has conductiveness, the second layer of the metal suboxide layer comprises a noble metal layer that includes oxygen and at least one noble metal selected from the group consisting of iridium, ruthenium, rhodium, rhenium, osmium, palladium and platinum.
Claim 24
Dependent Claim
78 words
The semiconductor memory device according to claim 21 , wherein the noble metal layer includes a transition metal selected from the group consisting of haffium, tantalum, zirconium, vanadium, molybdenum and tungsten and has a composition expressed by a chemical formula M1aM2bOc, wherein M1 represents the noble metal; M2 represents the transition metal, and O, represents Oxygen, and a, b, and c represent contents of respective metals, provided that the following relations are satisfied: 0.4<a<0.9, 0.02<b<0.15, 0.04<c and a+b+c=1.
Claim 25
Dependent Claim
112 words
A semiconductor memory device, comprising: a dielectric capacitor obtained by stacking a first electrode, a dielectric film and a second electrode; and a conductive plug connected to one of the first or second electrodes of the dielectric capacitor, wherein the one of the first and second electrodes includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and wherein the metal suboxide layer includes a first layer and a second layer of different materials, the first layer of the metal suboxide layer has a barrier effect against silicon and has conductiveness, the second layer of the metal suboxide layer comprises a noble metal layer including oxygen.
Claim 26
Dependent Claim
112 words
A semiconductor memory device, comprising: a dielectric capacitor obtained by stacking a first electrode, a dielectric film and a second electrode; and a conductive plug connected to one of the first or second electrodes of the dielectric capacitor, wherein the one of the first and second electrodes includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and wherein the metal suboxide layer includes a first layer and a second layer of different materials, the first layer of the metal suboxide layer has a barrier effect against silicon and has conductiveness, the second layer of the metal suboxide layer comprises a noble metal layer including oxygen.
Claim 27
Dependent Claim
23 words
The semiconductor memory device according to claim 23 , wherein the first layer of the metal suboxide layer is a titanium suboxide layer.
Claim 28
Dependent Claim
74 words
The semiconductor memory device according to claim 23 , wherein the noble metal layer includes a transition metal selected from the group consisting of hafnium, tantalum, zirconium, vanadium, molybdenum and tungsten and has a composition expressed by a chemical formula M1aM1bOc, wherein M1 represents a noble metal; M2 represents the transition metal, and a, b, and c represent contents of respective metals, provided that the following relations are satisfied: 0.4<a<0.9, 0.02<b<0.15, 0.04<c and a+b+c=1.
Claim 29
Dependent Claim
37 words
The semiconductor memory device according to claim 23 , wherein the metal suboxide layer and the diffusion barrier layer are stacked in the order from a conductive plug side of the electrode connected to the conductive plug.
Claim 30
Dependent Claim
36 words
The semiconductor memory device according to claim 23 , wherein the metal suboxide layer includes at least one kind of metal a free energy of formation of whose oxide is smaller than that of silicon oxide.
Claim 31
Dependent Claim
23 words
The semiconductor memory device according to claim 23 , wherein the first layer of the metal suboxide layer is a titanium suboxide layer.
Claim 32
Dependent Claim
23 words
The semiconductor memory device according to claim 23 , wherein the first layer of the metal suboxide layer is a vanadium suboxide layer.
Claim 33
Dependent Claim
41 words
The semiconductor memory device according to claim 23 , wherein the diffusion barrier layer is made of at least one selected from the group consisting of iridium, ruthenium, rhodium, rhenium and osmium, and oxides of iridium, ruthenium, rhodium, rhenium and osmium.
Claim 34
Dependent Claim
41 words
The semiconductor memory device according to claim 23 , wherein the conductive plug is made of impurity doped polysilicon and a silicide film is formed at a contact interface of the conductive plug with the electrode connected to the conductive plug.
Claim 35
Dependent Claim
22 words
The semiconductor memory device according to claim 23 , wherein the dielectric film is made of an ABO 3 perovskite structure compound.
Claim 36
Dependent Claim
60 words
The semiconductor memory device according to claim 32 , wherein the dielectric film includes at least one material selected from the group consisting of materials expressed by chemical formulae of SrTiO 3 , (Ba,Sr)TiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)TiO 3 , (Pb,La)(Zr,Ti)O 3 , BaTiO 3 , LiNbO 3 , LiTaO 3 and YMnO 3 .
Claim 37
Dependent Claim
22 words
The semiconductor memory device according to claim 23 , wherein the dielectric film is made of a bismuth layered perovskite structure compound.
Claim 38
Dependent Claim
86 words
The semiconductor memory device according to claim 34 , wherein the dielectric film includes at least one material selected from the group consisting of materials expressed by chemical formulae of SrBi 2 Ta 2 O 9 , SrBi 2 Nb 2 O 9 , SrBi 2 (Ta,Nb) 2 O 9 , Bi 4 Ti 3 O 12 , SrBi 4 Ti 4 O 15 , SrBi 4 (Ti,Zr) 4 O 15 , BaBi 2 Ta 2 O 9 and BaBi 2 Nb 2 O 9 .
Claim 39
Dependent Claim
34 words
The semiconductor memory device according to claim 23 , wherein the noble metal layer includes at least one noble metal selected from the group consisting of iridium, ruthenium, rhodium, rhenium, osmium, palladium and platinum.
Claim 40
Dependent Claim
84 words
A semiconductor memory device comprising: a dielectric capacitor obtained by stacking a first electrode, a dielectric film and a second electrode; and a conductive plug connected to one of the first or second electrodes of the dielectric capacitor, wherein the one of the first and second electrodes includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and wherein the metal suboxide layer comprises a metal suboxide selected from the group consisting of vanadium, chromium, iron, and rhenium.
Claim 41
Dependent Claim
84 words
A semiconductor memory device comprising: a dielectric capacitor obtained by stacking a first electrode, a dielectric film and a second electrode; and a conductive plug connected to one of the first or second electrodes of the dielectric capacitor, wherein the one of the first and second electrodes includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and wherein the metal suboxide layer comprises a metal suboxide selected from the group consisting of vanadium, chromium, iron, and rhenium.
Claim 42
Dependent Claim
37 words
The semiconductor memory device according to claim 37 , wherein the metal suboxide layer and the diffusion barrier layer are stacked in the order from a conductive plug side of the electrode connected to the conductive plug.
Claim 43
Dependent Claim
20 words
The semiconductor memory device according to claim 37 , wherein the metal suboxide layer has a barrier effect against silicon.
Claim 44
Dependent Claim
41 words
The semiconductor memory device according to claim 37 , wherein the diffusion barrier layer is made of at least one selected from the group consisting of iridium, ruthenium, rhodium, rhenium and osmium, and oxides of iridium, ruthenium, rhodium, rhenium and osmium.
Claim 45
Dependent Claim
41 words
The semiconductor memory device according to claim 37 , wherein the conductive plug is made of impurity doped polysilicon and a silicide film is formed at a contact interface of the conductive plug with the electrode connected to the conductive plug.
Claim 46
Dependent Claim
22 words
The semiconductor memory device according to claim 37 , wherein the dielectric film is made of an ABO 3 perovskite structure compound.
Claim 47
Dependent Claim
60 words
The semiconductor memory device according to claim 42 , wherein the dielectric film includes at least one material selected from the group consisting of materials expressed by chemical formulae of SrTiO 3 , (Ba,Sr)TiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)TiO 3 , (Pb,La)(Zr,Ti)O 3 , BaTiO 3 , LiNbO 3 , LiTaO 3 and YMnO 3 .
Claim 48
Dependent Claim
21 words
The semiconductor memory device according to claim 37 , wherein the dielectric/film is made of a bismuth layered perovskite structure compound.
Claim 49
Dependent Claim
86 words
The semiconductor memory device according to claim 44 , wherein the dielectric film includes at least one material selected from the group consisting of materials expressed by chemical formulae of SrBi 2 Ta 2 O 9 , SrBi 2 Nb 2 O 9 , SrBi 2 (Ta,Nb) 2 O 9 , Bi 4 Ti 3 O 12 , SrBi 4 Ti 4 O 15 , SrBi 4 (Ti,Zr) 4 O 15 , BaBi 2 Ta 2 O 9 and BaBi 2 Nb 2 O 9 .
Claim 50
Dependent Claim
94 words
The semiconductor memory device according to claim 37 , wherein the metal suboxide layer is constructed of a first layer and a second layer of different materials, the first layer includes the metal selected from the group consisting of vanadium, chromium, iron, and rhenium such that the first layer has a barrier effect against silicon and has conductiveness, the second layer of the metal suboxide layer comprises a noble metal layer that includes oxygen and at least one noble metal selected from the group consisting of iridium, ruthenium, rhodium, rhenium, osmium, palladium and platinum.
Claim 51
Dependent Claim
78 words
The semiconductor memory device according to claim 46 , wherein the noble metal layer includes a transition metal selected from the group consisting of hafnium, tantalum, zirconium, vanadium, molybdenum and tungsten and has a composition expressed by a chemical formula M1aM2bOc, wherein M1 represents the noble metal; M2 represents the transition metal, and O represents Oxygen, and a, b, and c represent contents of respective metals, provided that the following relations are satisfied: 0.4<a<0.9, 0.02<b<0.15, 0.04<c and a+b+c=1.
Claim 52
Dependent Claim
83 words
A capacitive semiconductor device comprising: a first electrode, a dielectric film formed on the first electrode, and a second electrode formed on the dielectric film; wherein the first electrode includes a barrier layer that substantially prevents the diffusion of oxygen through the barrier layer and a metal suboxide layer having a first and a second layer, the first layer comprises a metal suboxide that has a barrier effect against silicon and has conductiveness, the second layer comprises a noble metal layer including oxygen.
Claim 53
Dependent Claim
83 words
A capacitive semiconductor device comprising: a first electrode, a dielectric film formed on the first electrode, and a second electrode formed on the dielectric film; wherein the first electrode includes a barrier layer that substantially prevents the diffusion of oxygen through the barrier layer and a metal suboxide layer having a first and a second layer, the first layer comprises a metal suboxide that has a barrier effect against silicon and has conductiveness, the second layer comprises a noble metal layer including oxygen.
Claim 54
Dependent Claim
20 words
The capacitive semiconductor device of claim 48 , wherein the diffusion barrier layer is formed over the metal suboxide layer.
Claim 55
Dependent Claim
35 words
The capacitive semiconductor device of claim 48 , wherein the metal suboxide layer includes at least one kind of metal a free energy of formation of whose oxide is smaller than that of silicon oxide.
Claim 56
Dependent Claim
22 words
The capacitive semiconductor device of claim 48 , wherein the first layer of the metal suboxide layer is a titanium suboxide layer.
Claim 57
Dependent Claim
22 words
The capacitive semiconductor device of claim 48 , wherein the first layer of the metal suboxide layer is a vanadium suboxide layer.
Claim 58
Dependent Claim
40 words
The capacitive semiconductor device of claim 48 , wherein the diffusion barrier layer is made of at least one selected from the group consisting of iridium, ruthenium, rhodium, rhenium and osmium, and oxides of iridium, ruthenium, rhodium, rhenium and osmium.
Claim 59
Dependent Claim
21 words
The capacitive semiconductor device of claim 48 , wherein the dielectric film is made of an ABO 3 perovskite structure compound.
Claim 60
Dependent Claim
21 words
The capacitive semiconductor device of claim 48 , wherein the dielectric film is made of a bismuth layered perovskite structure compound.
Claim 61
Dependent Claim
33 words
The capacitive semiconductor device of claim 48 , wherein the noble metal layer includes at least one noble metal selected from the group consisting of iridium, ruthenium, rhodium, rhenium, osmium, palladium and platinum.
Claim 62
Dependent Claim
77 words
The capacitive semiconductor device of claim 48 , wherein the noble metal layer includes a transition metal selected from the group consisting of hafnium, tantalum, zirconium, vanadium, molybdenum and tungsten and has a composition expressed by a chemical formula M1aM2bOc, wherein M1 represents the noble metal; M2 represents the transition metal, and O represents Oxygen, and a, b, and c represent contents of respective metals, provided that the following relations are satisfied: 0.4<a<0.9, 0.02<b<0.15, 0.04<c and a+b+c=1.
Claim 63
Dependent Claim
66 words
A capacitive semiconductor device comprising: a first electrode, a dielectric film formed on the first electrode, and a second electrode formed on the dielectric film; wherein the first electrode includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and wherein the metal suboxide layer comprises a metal suboxide selected from the group consisting of vanadium, chromium, iron, and rhenium.
Claim 64
Dependent Claim
66 words
A capacitive semiconductor device comprising: a first electrode, a dielectric film formed on the first electrode, and a second electrode formed on the dielectric film; wherein the first electrode includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and wherein the metal suboxide layer comprises a metal suboxide selected from the group consisting of vanadium, chromium, iron, and rhenium.
Claim 65
Dependent Claim
20 words
The capacitive semiconductor device of claim 58 , wherein the diffusion barrier layer is formed on the metal suboxide layer.
Claim 66
Dependent Claim
19 words
The capacitive semiconductor device of claim 58 , wherein the metal suboxide layer has a barrier effect against silicon.
Claim 67
Dependent Claim
40 words
The capacitive semiconductor device of claim 58 , wherein the diffusion barrier layer is made of at least one selected from the group consisting of iridium, ruthenium, rhodium, rhenium and osmium, and oxides of iridium, ruthenium, rhodium, rhenium and osmium.
Claim 68
Dependent Claim
21 words
The capacitive semiconductor device of claim 58 , wherein the dielectric film is made of an ABO 3 perovskite structure compound.
Claim 69
Dependent Claim
59 words
The capacitive semiconductor device of claim 58 , wherein the dielectric film includes at least one material selected from the group consisting of materials expressed by chemical formulae of SrTiO 3 , (Ba,Sr)TiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)TiO 3 , (Pb,La)(Zr,Ti)O 3 , BaTiO 3 , LiNbO 3 , LiTaO 3 and YMnO 3 .
Claim 70
Dependent Claim
21 words
The capacitive semiconductor device of claim 58 , wherein the dielectric film is made of a bismuth layered perovskite structure compound.
Claim 71
Dependent Claim
85 words
The capacitive semiconductor device of claim 64 , wherein the dielectric film includes at least one material selected from the group consisting of materials expressed by chemical formulae of SrBi 2 Ta 2 O 9 , SrBi 2 Nb 2 O 9 , SrBi 2 (Ta,Nb) 2 O 9 , Bi 4 Ti 3 O 12 , SrBi 4 Ti 4 O 15 , SrBi 4 (Ti,Zr) 4 O 15 , BaBi 2 Ta 2 O 9 and BaBi 2 Nb 2 O 9 .
Claim 72
Dependent Claim
93 words
The capacitive semiconductor device of claim 58 , wherein the metal suboxide layer is constructed of a first layer and a second layer of different materials, the first layer includes the metal selected from the group consisting of vanadium, chromium, iron, and rhenium such that the first layer has a barrier effect against silicon and has conductiveness, the second layer of the metal suboxide layer comprises a noble metal layer that includes oxygen and at least one noble metal selected from the group consisting of iridium, ruthenium, rhodium, rhenium, osmium, palladium and platinum.
Claim 73
Dependent Claim
77 words
The capacitive semiconductor device of claim 66 , wherein the noble metal layer includes a transition metal selected from the group consisting of hafnium, tantalum, zirconium, vanadium, molybdenum and tungsten and has a composition expressed by a chemical formula M1aM2bOc, wherein M1 represents the noble metal; M2 represents the transition metal, and O represents Oxygen, and a, b, and c represent contents of respective metals, provided that the following relations are satisfied: 0.4<a<0.9, 0.02<b<0.15, 0.04<c and a+b+c=1.
References Cited (Backward Citations)
JPS63312663A
Cited
US5348894A
Cited
US5744832A
Cited
US5612574A
Cited
US5790366A
Cited
US6190963B1
Cited
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