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US6404027B1
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High dielectric constant gate oxides for silicon-based devices
Assignee: Nokia of America Corp
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Filing: 2000-02-07
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Granted: 2002-06-11
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Expires: 2020-02-07
Abstract
Abstract A high dielectric rare earth oxide of the form Mn 2 O 3 (such as, for example, Gd 2 O 3 or Y 2 O 3 ) is grown on a clean silicon (100) substrate surface under an oxygen partial pressure less than or equal to 10 −7 torr to form an acceptable gate oxide (in terms of dielectric constant (∈˜18) and thickness) that eliminates the tunneling current present in ultra-thin conventional SiO 2 dielectrics and avoids the formation of a native oxide layer at the interface between the silicon substrate and the dielectric. Epitaxial films can be grown on vicinal silicon substrates and amorphous films on regular silicon substrates to form the high dielectric gate oxide.
Inventors
- 👤 Minghwei Hong
- 👤 Ahmet Refik Kortan
- 👤 Jueinai Raynien Kwo
- 👤 Joseph Petrus Mannaerts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:23
CPC Classifications
H; H10; H10P; H10P10/00; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D62/00; H10D62/40; H10D62/405; H10D64/01352; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6349; H10D64/01342; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69396
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
94 words
A semiconductor device comprising: a vicinal silicon (100) substrate exhibiting a predetermined angular miscut so as to form a top major surface including surface steps of double atomic layers along the [011] direction, yielding mono-domain silicon terraces suitable for nucleating growth; and a rare earth oxide film of the form Mn 2 O 3 , exhibiting a dielectric constant ∈≧4 and deposited under an oxygen partial pressure less than 10 −7 torr, to a predetermined thickness t on the mono-domain silicon terraces of said vicinal silicon substrate, without forming an SiO 2 layer therebetween.
Claim 2
Dependent Claim
94 words
A semiconductor device comprising: a vicinal silicon (100) substrate exhibiting a predetermined angular miscut so as to form a top major surface including surface steps of double atomic layers along the [011] direction, yielding mono-domain silicon terraces suitable for nucleating growth; and a rare earth oxide film of the form Mn 2 O 3 , exhibiting a dielectric constant ∈≧4 and deposited under an oxygen partial pressure less than 10 −7 torr, to a predetermined thickness t on the mono-domain silicon terraces of said vicinal silicon substrate, without forming an SiO 2 layer therebetween.
Claim 3
Dependent Claim
19 words
A semiconductor device as defined in claim 1 wherein the rare earth oxide comprises Gd 2 O 3 .
Claim 4
Dependent Claim
21 words
A semiconductor device as defined in claim 2 wherein the Gd 2 O 3 comprises epitaxial Gd 2 O 3 .
Claim 5
Dependent Claim
22 words
A semiconductor device as defined in claim 2 wherein the rare earth oxide comprises a two-domain (100) Gd 2 O 3 structure.
Claim 6
Dependent Claim
23 words
A semiconductor device as defined in claim 2 wherein the rare earth oxide comprises a single domain (100) Gd 2 O 3 structure.
Claim 7
Dependent Claim
19 words
A semiconductor device as defined in claim 1 wherein the rare earth oxide comprises Y 2 O 3 .
Claim 8
Dependent Claim
21 words
A semiconductor device as defined in claim 6 wherein the Y 2 O 3 comprises epitaxial Y 2 O 3 .
Claim 9
Dependent Claim
22 words
A semiconductor device as defined in claim 6 wherein the rare earth oxide comprises a two-domain (100) Y 2 O 3 structure.
Claim 10
Dependent Claim
23 words
A semiconductor device as defined in claim 6 wherein the rare earth oxide comprises a single domain (100) Y 2 O 3 structure.
Claim 11
Dependent Claim
28 words
A semiconductor device as defined in claim 1 wherein the rare earth oxide is formed to comprise a thickness in the range of 10 Å to 500 Å.
Claim 12
Dependent Claim
23 words
A semiconductor device as defined in claim 1 wherein the vicinal silicon substrate comprises a predetermined angular miscut in the range of 4-6°.
Claim 13
Dependent Claim
30 words
A semiconductor device as defined in claim 11 wherein the predetermined angular miscut is approximately 4°, forming a terrace spacing on the silicon substrate major surface of approximately 80 Å.
Claim 14
Dependent Claim
65 words
A semiconductor device comprising a silicon substrate defined as comprising a top major surface; and an amorphous rare earth oxide of the form Mn 2 O 3 and exhibiting a dielectric constant ∈≧4 deposited, under an oxygen partial pressure less than 10 −7 torr to a predetermined thickness t on the top major surface of the silicon substrate without forming an SiO 2 film therebetween.
Claim 15
Dependent Claim
65 words
A semiconductor device comprising a silicon substrate defined as comprising a top major surface; and an amorphous rare earth oxide of the form Mn 2 O 3 and exhibiting a dielectric constant ∈≧4 deposited, under an oxygen partial pressure less than 10 −7 torr to a predetermined thickness t on the top major surface of the silicon substrate without forming an SiO 2 film therebetween.
Claim 16
Dependent Claim
20 words
A semiconductor device as defined in claim 13 wherein the amorphous rare earth oxide comprises Gd 2 O 3 .
Claim 17
Dependent Claim
20 words
A semiconductor device as defined in claim 13 wherein the amorphous rare earth oxide comprises Y 2 O 3 .
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| 7.5 Years (Year 8) | 2009-06-10 | 2009-12-10 | 2010-06-11 | $3760.00 | Window Closed / Lapsed |
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