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US6403975B1
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Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
Assignee: Max-Planck-Gesellschaft zur Förderung der Wissenschaften eV
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Filing: 1997-04-08
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Granted: 2002-06-11
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Expires: 2017-04-08
Abstract
Abstract A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si1-yCy and Si1-x-yGexCy, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-xGex layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-x-yGexCy layers, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. The components have faborable optical and electrical properties and are suitable for integration on a Si substrate.
Inventors
- 👤 Karl Brunner
- 👤 Karl Eberl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:24
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; B; B82; B82Y; B82Y20/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/017; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10F77/1465; H10H20/811; H10H20/812
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
332 words
A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator, and a waveguide, the semiconductor component being configured for operation in the wavelength range from 1.3 μm to 1.55 μm and comprising an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region, wherein said active region comprises one of the following layer structures: a) a superlattice comprising a plurality of periods of alternating layers of Si 1-y C y and Si 1-x-y Ge x C y with the atomic fraction y of the Si 1-x-y Ge x C y layers being not equal to zero and being different from the atomic fraction y of the Si 1-y C y layers, the atomic fraction y of the Si 1-y C y layers being not equal to zero; b) a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si 1-y C y and Si 1-x Ge x layers, the atomic fraction y of the Si 1-y C y layers being not equal to zero; and c) a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si 1-y C y and Si 1-x-y Ge x C y layers, with the atomic fraction y of the Si 1-x-y Ge x C y layers being not equal to zero and being different from the atomic fraction y of the Si 1-y C y layers, the atomic fraction y of the Si 1-y C y layers being not equal to zero; wherein x of Ge ranges from six to twenty times y of C in the Si 1-x-y Ge x C y layers and y of C in the Si 1-x-y Ge x C y layers ranges from 0% to 12%; and wherein y of C in the Si 1-y C y layers ranges from 0.02 to 0.12 and is different from y of C in the Si 1-x-y Ge x C y layers.
Claim 2
Dependent Claim
332 words
A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator, and a waveguide, the semiconductor component being configured for operation in the wavelength range from 1.3 μm to 1.55 μm and comprising an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region, wherein said active region comprises one of the following layer structures: a) a superlattice comprising a plurality of periods of alternating layers of Si 1-y C y and Si 1-x-y Ge x C y with the atomic fraction y of the Si 1-x-y Ge x C y layers being not equal to zero and being different from the atomic fraction y of the Si 1-y C y layers, the atomic fraction y of the Si 1-y C y layers being not equal to zero; b) a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si 1-y C y and Si 1-x Ge x layers, the atomic fraction y of the Si 1-y C y layers being not equal to zero; and c) a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si 1-y C y and Si 1-x-y Ge x C y layers, with the atomic fraction y of the Si 1-x-y Ge x C y layers being not equal to zero and being different from the atomic fraction y of the Si 1-y C y layers, the atomic fraction y of the Si 1-y C y layers being not equal to zero; wherein x of Ge ranges from six to twenty times y of C in the Si 1-x-y Ge x C y layers and y of C in the Si 1-x-y Ge x C y layers ranges from 0% to 12%; and wherein y of C in the Si 1-y C y layers ranges from 0.02 to 0.12 and is different from y of C in the Si 1-x-y Ge x C y layers.
Claim 3
Dependent Claim
46 words
A semiconductor component in accordance with claim 1 , wherein the atomic fractions x of Ge and y of C in the Si 1-x-y Ge x C y layers is selected so that the lattice constant is largely matched to that of an adjacent Si layer.
Claim 4
Dependent Claim
50 words
A semiconductor component in accordance with claim 1 , wherein the atomic fraction y of C in the Si 1-y C y layers lies in the range from 0.02 to 0.12 and is different from the atomic fraction y of C in the Si 1-x-y Ge x C y layers.
Claim 5
Dependent Claim
47 words
A semiconductor component in accordance with claim 1 , wherein the thickness of the Si 1-x-y Ge x C y layers lies in the range from about 0.5 to about 10 nm and the thickness of the Si 1-y C y layers lies in the same range.
Claim 6
Dependent Claim
32 words
A semiconductor component in accordance with claim 4 , wherein the thickness of the Si 1-x-y Ge x C y layers differs from the thickness of the Si 1-y C y layers.
Claim 7
Dependent Claim
74 words
A semiconductor component in accordance with claim 1 , wherein the atomic fraction y and the thickness of the Si 1-y C y layers and the atomic fractions x and y and the thickness of the Si 1-x-y Ge x C y layers are chosen to produce a compensated structure, comprising a structure with a low average strain below the level at which substantial defects arise in the semiconductor component due to strain relaxation.
Claim 8
Dependent Claim
23 words
A semiconductor component in accordance with claim 1 , wherein said superlattice structure comprises 10 to 100 periods of the repeating layer structures.
Claim 9
Dependent Claim
23 words
A semiconductor component in accordance with claim 7 , wherein said superlattice structure comprises 20 to 80 periods of the repeating layer structure.
Claim 10
Dependent Claim
22 words
A semiconductor component in accordance with claim 9 , wherein said superlattice structure comprises about 50 periods of the repeating layer structure.
Claim 11
Dependent Claim
64 words
A semiconductor component in accordance with claim 1 variant c), wherein the atomic fraction y and the thickness of the Si 1-y C y layers and the atomic fraction x and the thickness of the Si 1-x Ge x layers are chosen so that the average value of the lattice constant of the layer structure of the active region corresponds to that of Si.
Claim 12
Dependent Claim
58 words
A semiconductor component in accordance with claim 1 variant c), wherein the atomic fraction y of C in the Si 1-y C y layers lies in the range from 0.02 to 0.12 and is different from the atomic fraction x of Ge in the Si 1-x Ge x layers, x lying in the range from 0.3 to 1.0.
Claim 13
Dependent Claim
46 words
A semiconductor component in accordance with claim 1 variant c), wherein the thickness of the Si 1-x Ge x layers lies in the range from about 0.5 to about 10 nm and the thickness of the Si 1-y C y layers lies in the same range.
Claim 14
Dependent Claim
30 words
A semiconductor component in accordance with claim 12 , wherein the thickness of the Si 1-x Ge x layers differs from the thickness of the Si 1-y C y layers.
Claim 15
Dependent Claim
31 words
A semiconductor component in accordance with claim 1 , wherein the Si 1-y C y , Si 1-x Ge x and Si 1-x-y Ge x C y layers are substantially undoped.
Claim 16
Dependent Claim
52 words
A semiconductor component in accordance with claim 1 in the form of an optical detector, wherein said substrate comprises a p-Si substrate to which a first contact forming a negative pole is provided and said capping layer comprises an n-Si layer to which a second contact forming a positive pole is provided.
Claim 17
Dependent Claim
50 words
A semiconductor component in accordance with claim 1 in the form of an optical detector, wherein said substrate comprises an n-Si substrate, to which a first contact forming a positive pole is provided and said capping layer comprises p-Si, to which a second contact forming a negative pole is provided.
Claim 18
Dependent Claim
50 words
A semiconductor component in accordance with claim 1 in the form of a light emitting diode, wherein said substrate comprises an n-Si substrate, to which a first contact forming a negative pole is provided and said capping layer comprises p-Si, to which a second contact forming positive pole is provided.
Claim 19
Dependent Claim
51 words
A semiconductor component in accordance with claim 1 in the form of a light emitting diode, wherein said substrate comprises a p-Si substrate, to which a first contact forming a positive pole is provided and said capping layer comprises n-Si, to which a second contact forming a negative pole is provided.
Claim 20
Dependent Claim
54 words
A semiconductor component in accordance with claim 1 and realized in the form of an optical modulator, wherein said substrate comprises a p-Si substrate, to which a first contact forming one of a negative pole is provided and said capping layer comprises n-Si, to which a second contact forming a positive pole is provided.
Claim 21
Dependent Claim
52 words
A semiconductor component in accordance with claim 1 and realized in the form of an optical modulator, wherein said substrate comprises an n-Si substrate, to which a first contact forming a positive pole is provided and said capping layer comprises p-Si, to which a second contact forming a negative pole is provided.
Claim 22
Dependent Claim
14 words
A semiconductor component in accordance with claim 1 when realized as an optical wave-guide.
Claim 23
Dependent Claim
20 words
A semiconductor device comprising a silicon substrate having a plurality of semiconductor components in accordance with claim 1 formed thereon.
Claim 24
Dependent Claim
23 words
A semiconductor device in accordance with claim 21 , wherein one or more signal processing or generating circuits are formed on said substrate.
Claim 25
Dependent Claim
68 words
A semiconductor component in accordance with claim 1 , wherein a blind channel is formed in said component of device and has an end face transverse to an elongate direction of said channel and formed by a side face of said active region of said component, said channel being adapted to receive at least one optical fiber end for coupling at least one optical fiber to said component.
Claim 26
Dependent Claim
23 words
A semiconductor component in accordance with claim 26 , wherein the atomic fraction x of Ge is varied within the respective layer thickness.
Claim 27
Dependent Claim
23 words
A semiconductor component in accordance with claim 25 , wherein the atomic fraction y of C is varied within the repeating layer thickness.
Claim 28
Dependent Claim
37 words
A semiconductor component in accordance with claim 1 , wherein the atomic fraction x of the Ge amounts to about eight times the atomic fraction y of C in the Si 1-x-y Ge x C y layers.
Claim 29
Dependent Claim
28 words
A semiconductor component in accordance with claim 1 , wherein the atomic fraction y of C in the Si 1-x-y Ge x C y layers is about 5%.
Claim 30
Dependent Claim
122 words
A semiconductor component in accordance with claim 1 , wherein said substrate comprises one of a) an n-Si substrate doped with at least one of phosphorus and antimony at a doping concentration of the order of magnitude of 10 18 cm -3 and b) a p-Si substrate doped with boron at a doping concentration of the order of magnitude of 10 18 cm -3 and said capping layer comprises p-Si doped with boron at a doping concentration of the order of magnitude of 10 18 cm -3 when said substrate is a) and n-Si doped with at least one of phosphorus and antimony at a doping concentration of the order of magnitude of 10 18 cm -3 when said substrate is b).
Claim 31
Dependent Claim
52 words
A semiconductor component in accordance with claim 1 and realized in the form of an optical modulator, wherein said substrate comprises a p-Si substrate, to which a first contact forming a positive pole is provided and said capping layer comprises n-Si, to which a second contact forming a negative pole is provided.
Claim 32
Dependent Claim
52 words
A semiconductor component in accordance with claim 1 and realized in the form of an optical modulator, wherein said substrate comprises an n-Si substrate, to which a first contact forming a negative pole is provided and said capping layer comprises p-Si, to which a second contact forming a positive pole is provided.
Claim 33
Dependent Claim
23 words
A semiconductor component in accordance with claim 1 , wherein the atomic fraction y of C is varied within the repeating layer thickness.
Claim 34
Dependent Claim
295 words
A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator, and a waveguide, the semiconductor component being configured for operation in the wavelength range from 1.3 μm to 1.55 μm and comprising an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region, wherein said active region comprises one of the following layer structures: a) a superlattice comprising a plurality of periods of alternating layers of Si 1-y C y and Si 1-x-y Ge x C y with the atomic fraction y of the Si 1-x-y Ge x C y layers being different from the atomic fraction y of the Si 1-y C y layers, the atomic fraction y of at least one of the Si 1-y C y and Si 1-x-y Ge x C y layers being not equal to zero; and b) a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si 1-y C y and Si 1-x Ge x layers with the atomic fraction y of the Si 1-x-y Ge x C y layers being not equal to zero and being different from the atomic fraction y of the Si 1-y C y layers, the atomic fraction y of the Si 1-y C y layers being not equal to zero; wherein x of Ge ranges from six to twenty times y of C in the Si 1-x-y Ge x C y layers and y of C in the Si 1-x-y Ge x C y layers ranges from 0% to 12%; and wherein y of C in the Si 1-y C y layers ranges from 0.02 to 0.12 and is different from y of C in the Si 1-x-y Ge x C y layers.
Claim 35
Dependent Claim
295 words
A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator, and a waveguide, the semiconductor component being configured for operation in the wavelength range from 1.3 μm to 1.55 μm and comprising an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region, wherein said active region comprises one of the following layer structures: a) a superlattice comprising a plurality of periods of alternating layers of Si 1-y C y and Si 1-x-y Ge x C y with the atomic fraction y of the Si 1-x-y Ge x C y layers being different from the atomic fraction y of the Si 1-y C y layers, the atomic fraction y of at least one of the Si 1-y C y and Si 1-x-y Ge x C y layers being not equal to zero; and b) a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si 1-y C y and Si 1-x Ge x layers with the atomic fraction y of the Si 1-x-y Ge x C y layers being not equal to zero and being different from the atomic fraction y of the Si 1-y C y layers, the atomic fraction y of the Si 1-y C y layers being not equal to zero; wherein x of Ge ranges from six to twenty times y of C in the Si 1-x-y Ge x C y layers and y of C in the Si 1-x-y Ge x C y layers ranges from 0% to 12%; and wherein y of C in the Si 1-y C y layers ranges from 0.02 to 0.12 and is different from y of C in the Si 1-x-y Ge x C y layers.
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