Patent US6379989B1 successfully refreshed from Google Patents.
US6379989B1
Expired / Lapsed
US
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Process for manufacture of microoptomechanical structures
Assignee: Xerox Corp
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Filing: 1999-12-21
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Granted: 2002-04-30
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Expires: 2019-12-21
Abstract
Abstract A microoptomechanical structure produced by defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer, such as a SOI wafer, selectively etching the single crystal silicon layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer, depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures. Embodiments use an oxide as an insulator, and other embodiments provide for wafer bonding of the silicon layer to the insulator layer.
Inventors
- 👤 Joel A. Kubby
- 👤 Jingkuang Chen
- 👤 Alex T. Tran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:12
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/43; G02B6/4201; G02B6/4204; G02B6/4214
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
67 words
A microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer; selectively etching the single crystal silicon layer; depositing a sacrificial oxide layer on the etched single crystal silicon layer; depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures.
Claim 2
Dependent Claim
67 words
A microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer; selectively etching the single crystal silicon layer; depositing a sacrificial oxide layer on the etched single crystal silicon layer; depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures.
Claim 3
Dependent Claim
25 words
The microoptomechanical structure produced by a process of claim 1 wherein defining a microoptical structure further comprises using an oxide layer as the insulator layer.
Claim 4
Dependent Claim
27 words
The microoptomechanical structure produced by a process of claim 1 further comprising wafer bonding the single crystal silicon layer to the handle wafer with the insulator layer.
Claim 5
Dependent Claim
28 words
The microstructure produced by a process of claim 1 wherein selectively etching the single crystal silicon further comprises photolithographically patterning and dry etching the single crystal silicon layer.
Claim 6
Dependent Claim
92 words
A microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an intermediate oxide layer from a handle wafer, selectively etching the single crystal silicon layer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the intermediate oxide layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer; depositing and patterning a polysilicon layer on the sacrificial oxide layer; integrating CMOS circuitry and sensors, depositing an optical film on the microoptical structure, and releasing the formed microoptical structure.
Claim 7
Dependent Claim
92 words
A microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an intermediate oxide layer from a handle wafer, selectively etching the single crystal silicon layer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the intermediate oxide layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer; depositing and patterning a polysilicon layer on the sacrificial oxide layer; integrating CMOS circuitry and sensors, depositing an optical film on the microoptical structure, and releasing the formed microoptical structure.
Claim 8
Dependent Claim
28 words
The microoptomechanical structure produced by a process of claim 5 further comprising wafer bonding the single crystal silicon layer to the handle wafer with the intermediate insulator layer.
Claim 9
Dependent Claim
39 words
The microoptomechanical structure produced by a process of claim 5 further comprising: depositing a PSG layer on the polysilicon layer; patterning the PSG layer and polysilicon layer; depositing a protective oxide layer prior to releasing the formed microoptical structure.
Claim 10
Dependent Claim
116 words
microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an oxide layer from a handle wafer; photolithographically patterning and etching the single crystal silicon layer; depositing a sacrificial oxide layer on the etched single crystal layer and handle wafer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the oxide layer, etching holes through the sacrificial oxide layer, depositing a sacrificial oxide layer on the etched single crystal layer; depositing a polysilicon layer on the sacrificial oxide layer; depositing a PSG layer on the polysilicon layer; patterning the PSG layer and polysilicon layer; and coating microoptical structures with thin films having desired optical properties.
Claim 11
Dependent Claim
116 words
microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an oxide layer from a handle wafer; photolithographically patterning and etching the single crystal silicon layer; depositing a sacrificial oxide layer on the etched single crystal layer and handle wafer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the oxide layer, etching holes through the sacrificial oxide layer, depositing a sacrificial oxide layer on the etched single crystal layer; depositing a polysilicon layer on the sacrificial oxide layer; depositing a PSG layer on the polysilicon layer; patterning the PSG layer and polysilicon layer; and coating microoptical structures with thin films having desired optical properties.
Claim 12
Dependent Claim
88 words
A microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an intermediate oxide layer from a handle wafer; selectively etching the single crystal silicon layer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the intermediate oxide layer; depositing and patterning a polysilicon layer on the intermediate oxide layer; integrating CMOS circuitry and sensors into at least one of the silicon layers; depositing an optical film on the microoptical structure; and releasing the formed microoptical structure.
Claim 13
Dependent Claim
88 words
A microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an intermediate oxide layer from a handle wafer; selectively etching the single crystal silicon layer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the intermediate oxide layer; depositing and patterning a polysilicon layer on the intermediate oxide layer; integrating CMOS circuitry and sensors into at least one of the silicon layers; depositing an optical film on the microoptical structure; and releasing the formed microoptical structure.
Claim 14
Dependent Claim
23 words
The structure of claim 9 wherein integrating CMOS circuitry and sensors comprises integrating CMOS circuitry and sensors in the single crystal silicon layer.
Claim 15
Dependent Claim
23 words
The structure of claim 5 wherein integrating CMOS circuitry and sensors comprises integrating CMOS circuitry and sensors in the single crystal silicon layer.
Claim 16
Dependent Claim
50 words
A microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer, with remaining polysilicon forming hinge elements, and releasing formed microoptical structures.
Claim 17
Dependent Claim
50 words
A microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer, with remaining polysilicon forming hinge elements, and releasing formed microoptical structures.
Claim 18
Dependent Claim
42 words
A microoptomechanical structure produced by the method of claim 12 , the method farther comprising depositing a sacrificial oxide layer on the etched single crystal silicon layer, and depositing a polysilicon layer includes depositing the polysilicon layer on the sacrificial oxide layer.
Claim 19
Dependent Claim
83 words
A microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an intermediate oxide layer from a handle wafer; selectively etching the single crystal silicon layer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the intermediate oxide layer, depositing and patterning a polysilicon layer; integrating CMOS circuitry and sensors into at least one of the silicon layers; depositing an optical film on the microoptical stucture; and releasing the formed microoptical structure.
Claim 20
Dependent Claim
83 words
A microoptomechanical structure produced by a process comprising: defining a microoptical structure in a single-crystal silicon layer separated by an intermediate oxide layer from a handle wafer; selectively etching the single crystal silicon layer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the intermediate oxide layer, depositing and patterning a polysilicon layer; integrating CMOS circuitry and sensors into at least one of the silicon layers; depositing an optical film on the microoptical stucture; and releasing the formed microoptical structure.
Claim 21
Dependent Claim
42 words
A microoptomechanical structure produced by the method of claim 14 , the method further comprising depositing a sacrificial oxide layer on the etched single crystal silicon layer and depositing a polysilicon layer includes depositing the polysilicon layer on the sacrificial oxide layer.
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