Patent US4782724A successfully refreshed from Google Patents.
Patent US6376362B1 successfully refreshed from Google Patents.
US6376362B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 2000-04-11
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Granted: 2002-04-23
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Expires: 2020-04-11
Abstract
Abstract A method of producing a semiconductor device having a connecting thin film for connection to a bonding wire on a bonding pad formed on a surface of a surface protective film. A recess is formed in the surface of the surface protective film. Thereafter, a metal deposited layer composed of a material for the bonding pad is formed, and a metal thin film composed of a material for the connecting thin film is further formed thereon. After the metal thin film is formed, unnecessary parts of the metal deposited layer and the metal thin film are removed by chemical mechanical polishing, for example.
Inventors
- 👤 Muneyuki Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:43
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/019; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W72/012; H10W72/20; H10W72/251; H10W72/29; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
116 words
A method of producing a semiconductor device having a connecting thin film for connection to a bonding wire on a bonding pad formed on a surface of a surface protective film, comprising the steps of: forming a recess on the surface of the surface protective film; forming a metal deposited layer composed of a material for said bonding pad on the surface of the surface protective film having the recess formed therein; forming a metal thin film composed of a material for said connecting thin film on a surface of the metal deposited layer thus formed; and removing unnecessary parts of said metal deposited layer and the metal thin film after forming the metal thin film.
Claim 2
Independent Claim
116 words
A method of producing a semiconductor device having a connecting thin film for connection to a bonding wire on a bonding pad formed on a surface of a surface protective film, comprising the steps of: forming a recess on the surface of the surface protective film; forming a metal deposited layer composed of a material for said bonding pad on the surface of the surface protective film having the recess formed therein; forming a metal thin film composed of a material for said connecting thin film on a surface of the metal deposited layer thus formed; and removing unnecessary parts of said metal deposited layer and the metal thin film after forming the metal thin film.
Claim 3
Dependent Claim
38 words
The method according to claim 1 , wherein the step of removing the unnecessary parts of said metal deposited layer and the metal thin film includes processing for polishing said metal deposited layer and the metal thin film.
Claim 4
Dependent Claim
42 words
The method according to claim 1 , wherein the step of removing the unnecessary parts of the metal deposited layer and the metal thin film includes processing for polishing said metal deposited layer and the metal thin film by chemical mechanical polishing.
Claim 5
Dependent Claim
46 words
The method according to claim 1 , wherein said metal deposited layer is formed to such a thickness that the height of a surface of its portion within said recess is smaller than the height of the surface, outside said recess, of said surface protective film.
Claim 6
Dependent Claim
48 words
The method according to claim 4 , wherein said metal thin film is formed to such a thickness that the height of a surface of its portion opposite to said recess is not less than the height of the surface, outside said recess, of said surface protective film.
Claim 7
Dependent Claim
75 words
The method according to claim 4 , wherein the step of removing the unnecessary parts of the metal deposited layer and the metal thin film includes the step of polishing the metal deposited layer and the metal thin film, and the polishing step is performed until the surfaces of said metal deposited layer and the metal thin film within said recess are almost flush with the surface, outside said recess, of said surface protective film.
Claim 8
Dependent Claim
48 words
The method according to claim 1 , wherein said metal deposited layer is formed to such a thickness that the height of the surface of its portion opposite to said recess is not less than the height of the surface, outside said recess, of said surface protective film.
Claim 9
Dependent Claim
65 words
The method according to claim 7 , wherein the step of removing the unnecessary parts of the metal deposited layer the metal thin film includes the step of polishing the metal deposited layer and the metal thin film, and the polishing rate of said metal deposited layer in said polishing step is set to one higher than the polishing rate of said metal thin film.
Claim 10
Dependent Claim
65 words
The method according to claim 8 , wherein said polishing step is carried out until the surface, outside the recess, of said surface protective film is exposed, and said metal thin film is formed to such a thickness that its part remaining when the polishing step is terminated can cover at least a part, inside said recess, of the surface of the metal deposited layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-04-22 | 2005-10-22 | 2006-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-04-22 | 2009-10-22 | 2010-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-04-22 | 2013-10-22 | 2014-04-23 | $7700.00 | Window Closed / Lapsed |