Patent US6376325B1 successfully refreshed from Google Patents.
US6376325B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a ferroelectric device
Assignee: Samsung Electronics Co Ltd
•
Filing: 2000-09-20
•
Granted: 2002-04-23
•
Expires: 2020-09-20
Abstract
Abstract A method for fabricating a ferroelectric device with improved ferroelectric characteristics and which can provide a reliable contact resistance of a barrier metal layer. The method includes forming an adhesion layer and a barrier metal layer to be electrically connected to the contact plug buried in an insulating layer. The adhesion layer and the barrier layer is then patterned to define an upper surface and a sidewall thereof. An oxidation barrier layer is formed on sidewalls of the patterned layer. An oxide electrode layer and a metal electrode layer are formed thereon for forming a lower electrode. Next, a ferroelectric film and an upper electrode layer are formed thereon. Subsequently, the upper electrode layer, ferroelectric film, platinum and the oxide electrode are patterned to form a ferroelectric capacitor. A diffusion barrier layer is then formed to protect the ferroelectric capacitor.
Inventors
- 👤 Bon-jae Koo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:07
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692; H10D1/696; H10D84/80; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
143 words
A method for fabricating a ferroelectric device, comprising: forming an interlayer insulating layer on a semiconductor substrate, the interlayer insulating layer having a contact plug therein; forming a first lower electrode pattern of a capacitor over the interlayer insulating layer to be electrically connected to the contact plug; forming an oxidation barrier layer at least on a sidewall of the first lower electrode pattern; sequentially forming a second lower electrode pattern layer, a dielectric layer and an upper electrode layer overlying the first lower electrode pattern and on the oxidation barrier layer; and patterning the upper electrode layer, the dielectric layer and the second lower electrode pattern layer, to form an upper electrode pattern, a dielectric pattern and a second lower electrode pattern, wherein the first and second lower electrode patterns, the dielectric pattern and the upper electrode pattern form a ferroelectric capacitor.
Claim 2
Independent Claim
143 words
A method for fabricating a ferroelectric device, comprising: forming an interlayer insulating layer on a semiconductor substrate, the interlayer insulating layer having a contact plug therein; forming a first lower electrode pattern of a capacitor over the interlayer insulating layer to be electrically connected to the contact plug; forming an oxidation barrier layer at least on a sidewall of the first lower electrode pattern; sequentially forming a second lower electrode pattern layer, a dielectric layer and an upper electrode layer overlying the first lower electrode pattern and on the oxidation barrier layer; and patterning the upper electrode layer, the dielectric layer and the second lower electrode pattern layer, to form an upper electrode pattern, a dielectric pattern and a second lower electrode pattern, wherein the first and second lower electrode patterns, the dielectric pattern and the upper electrode pattern form a ferroelectric capacitor.
Claim 3
Dependent Claim
54 words
The method according to claim 1 , wherein the step of forming an oxidation barrier layer at least on a sidewall of the first lower electrode pattern comprises; forming an oxidation barrier material layer on the first lower electrode pattern and on the interlayer insulating layer; and etching back the oxidation barrier material layer.
Claim 4
Dependent Claim
63 words
The method according to claim 1 , wherein the step of forming an oxidation barrier layer on a sidewall of the first lower electrode pattern comprises; forming an oxidation barrier material layer on the first lower electrode pattern and on the interlayer insulating layer; and planarizing the oxidation barrier material layer until a top surface of the first lower electrode pattern is exposed.
Claim 5
Dependent Claim
74 words
The method according to claim 1 , wherein the step of forming a first lower electrode pattern comprises: forming an adhesion layer over the interlayer insulating layer; forming a conductive barrier layer on the adhesion layer; and, patterning the adhesion and conductive barrier layers to form the first lower electrode pattern, wherein the second lower electrode pattern layer is made of a double layer including an oxide electrode layer and a metal electrode layer.
Claim 6
Dependent Claim
100 words
The method according to claim 4 , wherein the adhesion layer is made of a conductive material selected from the group consisting of TiN, Ti and Co, and the conductive barrier layer is made of a conductive material selected from the group consisting of Ir and Ru, and the oxidation barrier layer is made of an insulating material selected from the group consisting of SiO 2 and Si 3 N 4 , and the oxide electrode is made of a conductive material selected from the group consisting of IrO 2 and RuO 2 and the metal electrode comprises a platinum.
Claim 7
Dependent Claim
34 words
The method according to claim 5 , wherein the second lower electrode pattern extends outward from the outer edges of the first lower electrode pattern on the interlayer insulating layer to a predetermined distance.
Claim 8
Dependent Claim
39 words
The method according to claim 5 , wherein the oxidation barrier layer prevents oxidation of the sidewall of the first lower electrode pattern, and the conductive barrier layer prevents oxidation of the adhesion layer at an upper surface thereof.
Claim 9
Dependent Claim
21 words
The method according to claim 1 , further comprising forming a diffusion barrier layer to cover at least the ferroelectric capacitor.
Claim 10
Dependent Claim
30 words
The method according to claim 8 , wherein the diffusion barrier layer is made of one selected from the group consisting of TiO 2 and Al 2 O 3 .
Claim 11
Independent Claim
139 words
A method for fabricating a ferroelectric device, comprising: forming an interlayer insulating layer on a semiconductor substrate, the interlayer insulating layer having a contact plug therein; forming a first lower electrode pattern of a capacitor over the interlayer insulating layer to be electrically connected to the contact plug; forming an oxidation barrier layer at least on a sidewall of the first lower electrode pattern; forming a second lower electrode pattern layer on the first lower electrode pattern and on the oxidation barrier layer; forming a dielectric layer on the second lower electrode pattern layer; forming an upper electrode layer on the dielectric layer; and patterning the upper electrode layer, the dielectric layer and the second lower electrode pattern layer, to form an upper electrode pattern, a dielectric pattern and a second lower electrode pattern to form a ferroelectric capacitor.
Claim 12
Independent Claim
139 words
A method for fabricating a ferroelectric device, comprising: forming an interlayer insulating layer on a semiconductor substrate, the interlayer insulating layer having a contact plug therein; forming a first lower electrode pattern of a capacitor over the interlayer insulating layer to be electrically connected to the contact plug; forming an oxidation barrier layer at least on a sidewall of the first lower electrode pattern; forming a second lower electrode pattern layer on the first lower electrode pattern and on the oxidation barrier layer; forming a dielectric layer on the second lower electrode pattern layer; forming an upper electrode layer on the dielectric layer; and patterning the upper electrode layer, the dielectric layer and the second lower electrode pattern layer, to form an upper electrode pattern, a dielectric pattern and a second lower electrode pattern to form a ferroelectric capacitor.
Claim 13
Dependent Claim
74 words
The method according to claim 10 , wherein the step of forming a first lower electrode pattern comprises: forming an adhesion layer over the interlayer insulating layer; forming a conductive barrier layer on the adhesion layer; and, patterning the adhesion and conductive barrier layers to form the first lower electrode pattern, wherein the second lower electrode pattern layer is made of a double layer including an oxide electrode layer and a metal electrode layer.
References Cited (Backward Citations)
US5489548A
Cited
US5654224A
Cited
US5854104A
Cited
US6211005B1
Cited
US5807774A
Cited
US6235542B1
Cited
US6200821B1
Cited
US6210979B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-04-22 | 2005-10-22 | 2006-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-04-22 | 2009-10-22 | 2010-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-04-22 | 2013-10-22 | 2014-04-23 | $7700.00 | Window Closed / Lapsed |