US6235542B1
Expired / Lapsed
US
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Ferroelectric memory device and method for fabricating the same
Assignee: SK Hynix Inc
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Filing: 1999-07-01
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Granted: 2001-05-22
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Expires: 2019-07-01
Abstract
Abstract A method for fabricating a ferroelectric memory device, comprising the steps of: providing a semiconductor substrate where a transistor having an impurity region is formed; forming a conduction layer for storage node over the substrate; forming a ferroelectric film on the conduction layer; patterning the conduction layer and the ferroelectric film to form a storage node and a dielectric film; forming a protection film for dielectric film over the semiconductor substrate to cover the storage node and the dielectric film; patterning the protection film to expose a selected portion of the dielectric film; and forming a plate node on the dielectric film.
Inventors
- 👤 Yong Sik Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:12
CPC Classifications
H; H10; H10B; H10B53/00; H10D; H10D84/00; H10D84/01; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B53/30; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
143 words
A method for fabricating a ferroelectric memory device, comprising the steps of: providing a semiconductor substrate where a transistor having an impurity region is formed; forming a conduction layer for a storage node over the substrate; furnace-annealing the conduction layer; forming a first ferroelectric film on the conduction layer; rapid-thermally annealing the first ferroelectric film; forming a second ferroelectric film on the first ferroelectric film; rapid-thermally annealing the second film on the first ferroelectric film; furnace-annealing the first and second ferroelectric films; patterning the conduction layer and the ferroelectric films to form a storage node and a dielectric film; forming a protection film for protecting the dielectric film over the semiconductor substrate to cover the storage node and the dielectric film; patterning the protection film to expose a selected portion of the dielectric film; and forming a plate node on the dielectric film.
Claim 2
Independent Claim
143 words
A method for fabricating a ferroelectric memory device, comprising the steps of: providing a semiconductor substrate where a transistor having an impurity region is formed; forming a conduction layer for a storage node over the substrate; furnace-annealing the conduction layer; forming a first ferroelectric film on the conduction layer; rapid-thermally annealing the first ferroelectric film; forming a second ferroelectric film on the first ferroelectric film; rapid-thermally annealing the second film on the first ferroelectric film; furnace-annealing the first and second ferroelectric films; patterning the conduction layer and the ferroelectric films to form a storage node and a dielectric film; forming a protection film for protecting the dielectric film over the semiconductor substrate to cover the storage node and the dielectric film; patterning the protection film to expose a selected portion of the dielectric film; and forming a plate node on the dielectric film.
Claim 3
Dependent Claim
27 words
The method as claimed in claim 1 , further comprising the step of forming a glue layer over the semiconductor substrate before formation of the conduction layer.
Claim 4
Dependent Claim
24 words
The method as claimed in claim 2 , wherein the glue layer is comprised of one of a Ti layer or a Ta layer.
Claim 5
Dependent Claim
22 words
The method as claimed in claim 2 , wherein the glue layer is formed at a thickness of 100 to 1000 Å.
Claim 6
Dependent Claim
22 words
The method as claimed in claim 1 , wherein the conduction layer for the storage node is comprised of a Pt layer.
Claim 7
Dependent Claim
25 words
The method as claimed in claim 5 , the conduction layer for the storage node is formed at a thickness of 1000 to 5000 Å.
Claim 8
Dependent Claim
60 words
The method as claimed in claim 1 , wherein the furnace-annealing of the conduction layer is carried out at a temperature of 500 to 700° C. during 10 to 60 minutes at ambient of oxygen and the furnace-annealing of the first and second ferroelectric films is at 700 to 800° C. during 10 to 60 minutes at ambient of oxygen.
Claim 9
Dependent Claim
17 words
The method as claimed in claim 1 , wherein the ferroelectric films are formed with spin coating.
Claim 10
Dependent Claim
18 words
The method as claimed in claim 1 , wherein the ferroelectric films are comprised of SrBi2Ta2O9 (SBT) film.
Claim 11
Dependent Claim
75 words
The method as claimed in claim 9 , wherein the formation step of the SBT films includes the steps of: forming a first SBT film over the conduction layer for storage node; drying the first SBT film; rapid-thermally annealing the dried first SBT film; drying the second SBT film; rapid-thermally annealing the dried second SBT film; and, furnace-annealing the first and second SBT films after the rapid-thermally annealing step of the dried second SBT film.
Claim 12
Dependent Claim
40 words
The method as claimed in claim 10 , wherein the furnace annealing step for the first and second SBT films is carried out at a temperature of 700 to 800° C. during 10 to 60 minutes at ambient of oxygen.
Claim 13
Dependent Claim
48 words
The method as claimed in claim 10 , wherein the first and second SBT films are first dried at a temperature of 160 to 180° C. during 1 to 5 minutes and then second dried at a temperature of 260 to 280° C. during 1 to 5 minutes.
Claim 14
Dependent Claim
33 words
The method as claimed in claim 10 , wherein the rapid-thermally annealing step is carried out at a temperature of 600 to 800° C. during 10 to 60 seconds at ambient of oxygen.
Claim 15
Dependent Claim
26 words
The method as claimed in claim 10 , wherein the first and second SBT films are formed at a thickness of 800 to 1200 Å, respectively.
Claim 16
Dependent Claim
19 words
The method as claimed in claim 1 , wherein the protection film for dielectric film is comprised of SrTiO3.
Claim 17
Dependent Claim
26 words
The method as claimed in claim 15 , wherein the protection film is deposited at a temperature of 300 to 550° C. with chemical vapor deposition.
Claim 18
Dependent Claim
22 words
The method as claimed in claim 15 , wherein the protection film is deposited at a thickness of 500 to 2000 Å.
Claim 19
Dependent Claim
18 words
The method as claimed in claim 1 , where the plate node is comprised of a Pt layer.
Claim 20
Dependent Claim
72 words
The method as claimed in claim 1 , further comprising the steps of forming an intermediating insulating layer over the protection film and the plate node; etching the intermediating layer to expose the impurity region of the transistor and the plate node, thereby forming contact holes; and forming a metal interconnection layer over the intermediate insulating layer to be contacted with the impurity region and the plate node through the contact holes.
References Cited (Backward Citations)
US5580814A
Cited
US5382787A
Cited
US5516363A
Cited
US5418389A
Cited
US5527766A
Cited
US5729054A
Cited
US5541807A
Cited
US5635730A
Cited
US5751061A
Cited
JPH09246510A
Cited
US5976946A
Cited
US5824590A
Cited
JPH10294433A
Cited
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