US6351013B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low-K sub spacer pocket formation for gate capacitance reduction
Assignee: Advanced Micro Devices Inc
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Filing: 1999-07-13
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Granted: 2002-02-26
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Expires: 2019-07-13
Abstract
Abstract The capacitance between the gate electrode and the source/drain regions of a semiconductor device is reduced by forming sub-spacers of a low dielectric constant (K) material at the corners of the gate electrode above the source/drain regions. Subsequently, insulating sidewall spacers are formed over the sub-spacers to shield-shallow source/drain regions from subsequent impurity implantations. The resulting semiconductor device exhibits reduced capacitance between the gate electrode and the source/drain regions, while maintaining circuit reliability.
Inventors
- 👤 Scott Luning
- 👤 David Wu
- 👤 Khanh Tran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:03
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/0229; H10D64/00; H10D64/01; H10D64/021; H10D64/60; H10D64/66; H10D64/671; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6925; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
99 words
A semiconductor device comprising: a semiconductor substrate; a dielectric layer formed on the semiconductor substrate; a gate electrode having an upper surface and side surfaces formed on the dielectric layer; first sidewall spacers, comprising a first material having a low dielectric constant, formed on the side surfaces of the gate electrode; a shallow source/drain region extending to a first depth below the surface of the semiconductor substrate; and a moderately or heavily doped source/drain region extending to a second depth greater than the first depths, wherein the first material has a dielectric constant of about 1.5 to about 3.5.
Claim 2
Dependent Claim
99 words
A semiconductor device comprising: a semiconductor substrate; a dielectric layer formed on the semiconductor substrate; a gate electrode having an upper surface and side surfaces formed on the dielectric layer; first sidewall spacers, comprising a first material having a low dielectric constant, formed on the side surfaces of the gate electrode; a shallow source/drain region extending to a first depth below the surface of the semiconductor substrate; and a moderately or heavily doped source/drain region extending to a second depth greater than the first depths, wherein the first material has a dielectric constant of about 1.5 to about 3.5.
Claim 3
Dependent Claim
30 words
The semiconductor device of claim 1 , comprising: second sidewall spacers, comprising an insulating material, formed adjacent the side surfaces of the gate electrode and over the first sidewall spacers.
Claim 4
Dependent Claim
14 words
The semiconductor device of claim 2 , wherein the first material comprises hydrogen silesquioxane.
Claim 5
Dependent Claim
15 words
The semiconductor device of claim 2 , wherein the first material comprises a spin-on glass.
Claim 6
Dependent Claim
14 words
The semiconductor device of claim 2 , wherein the first material comprises an organo-oxide.
Claim 7
Dependent Claim
22 words
The semiconductor device of claim 1 , wherein the dielectric layer comprises a silicon oxide and the gate electrode comprises doped polysilicon.
References Cited (Backward Citations)
US5200352A
Cited
US5319232A
Cited
US5334870A
Cited
US5670804A
Cited
US5672544A
Cited
US5747373A
Cited
US5880018A
Cited
US5998849A
Cited
US5977600A
Cited
US5811342A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-02-25 | 2005-08-27 | 2006-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-02-25 | 2009-08-27 | 2010-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-02-25 | 2013-08-27 | 2014-02-26 | $7700.00 | Window Closed / Lapsed |