US5977600A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Formation of shortage protection region
Assignee: Advanced Micro Devices Inc
•
Filing: 1998-01-05
•
Granted: 1999-11-02
•
Expires: 2018-01-05
Abstract
Abstract The formation of a shortage protection region is disclosed. In one embodiment, a method includes three steps. In the first step, a first ion implantation is applied to form lightly doped regions within a semiconductor substrate adjacent to sidewalls of a gate over the substrate. In the second step, two spaces are formed on the substrate, each adjacent to a sidewall of the gate, so that a second ion implantation forms heavily doped regions within the substrate adjacent to the first spacers. In the third step, two additional spacers are formed on the substrate, each overlapping and extending beyond a corresponding spacer previously formed. Thus, a third ion implantation forms lightly doped shortage protection regions within the substrate adjacent to the spacers most recently formed.
Inventors
- 👤 Derick Wristers
- 👤 Jon Cheek
- 👤 H. James Fulford
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:59
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01346; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/01338; H10D64/021; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/10; H10W20/00; H10W20/01; H10W20/031; H10W20/0698; H10W20/40; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
95 words
A device comprising: a gate over a substrate having two sidewalls, two first spacers immediately adjacent to the sidewalls, and two second spacers overlapping and extending beyond the first spacers; first lightly doped regions within the substrate adjacent to and generally aligned with the sidewalls of the gate; heavily doped regions within the substrate below the first lightly doped regions and adjacent to and generally aligned with the first spacers; and, second lightly doped shortage protection regions within the substrate below the heavily doped regions and adjacent to and generally aligned with the second spacers.
Claim 2
Independent Claim
95 words
A device comprising: a gate over a substrate having two sidewalls, two first spacers immediately adjacent to the sidewalls, and two second spacers overlapping and extending beyond the first spacers; first lightly doped regions within the substrate adjacent to and generally aligned with the sidewalls of the gate; heavily doped regions within the substrate below the first lightly doped regions and adjacent to and generally aligned with the first spacers; and, second lightly doped shortage protection regions within the substrate below the heavily doped regions and adjacent to and generally aligned with the second spacers.
Claim 3
Dependent Claim
14 words
The device of claim 1, further comprising a shallow trench isolation within the substrate.
Claim 4
Dependent Claim
15 words
The device of claim 2, further comprising an oxide layer within the shallow trench isolation.
Claim 5
Dependent Claim
13 words
The device of claim 2, further comprising a metallization layer over the gate.
Claim 6
Dependent Claim
54 words
The device of claim 4, wherein the metallization layer comprises: a mask selectively exposing an underlying portion of at least one of the substrate, the shallow trench isolation, and the gate; and, a local interconnect covering the underlying portion of the at least one of the substrate, the shallow trench isolation, and the gate.
Claim 7
Dependent Claim
25 words
The device of claim 5, wherein the local interconnect comprises at least one selected from the group essentially consisting of titanium, titanium nitride and tungsten.
Claim 8
Dependent Claim
10 words
The device of claim 5, wherein the mask comprises tetra-ethyl-ortho-silicate.
Claim 9
Dependent Claim
34 words
The device of claim 1, further comprising an isolation trench partially filled with an oxide, wherein an edge of the oxide is below the heavily doped regions and intersects the second lightly doped regions.
Claim 10
Dependent Claim
107 words
A computerized system comprising at least one device, each device comprising: a gate over a substrate having two sidewalls, two first spacers immediately adjacent to and generally aligned with the sidewalls, and two second spacers overlapping and extending beyond the first spacers; first lightly doped regions within the substrate adjacent to and generally aligned with the sidewalls of the gate; heavily doped regions within the substrate below the first lightly doped regions and adjacent to and generally aligned with the first spacers; and, second lightly doped shortage protection regions within the substrate below the heavily doped regions and adjacent to and generally aligned with the second spacers.
Claim 11
Dependent Claim
107 words
A computerized system comprising at least one device, each device comprising: a gate over a substrate having two sidewalls, two first spacers immediately adjacent to and generally aligned with the sidewalls, and two second spacers overlapping and extending beyond the first spacers; first lightly doped regions within the substrate adjacent to and generally aligned with the sidewalls of the gate; heavily doped regions within the substrate below the first lightly doped regions and adjacent to and generally aligned with the first spacers; and, second lightly doped shortage protection regions within the substrate below the heavily doped regions and adjacent to and generally aligned with the second spacers.
Claim 12
Dependent Claim
17 words
The system of claim 9, wherein each device further comprises a shallow trench isolation within the substrate.
Claim 13
Dependent Claim
18 words
The system of claim 10, wherein each device further comprises an oxide layer within the shallow trench isolation.
Claim 14
Dependent Claim
16 words
The system of claim 10, wherein each device further comprises a metallization layer over the gate.
Claim 15
Dependent Claim
54 words
The system of claim 12, wherein the metallization layer comprises: a mask selectively exposing an underlying portion of at least one of the substrate, the shallow trench isolation, and the gate; and, a local interconnect covering the underlying portion of the at least one of the substrate, the shallow trench isolation, and the gate.
References Cited (Backward Citations)
US5241203A
Cited
US5440165A
Cited
US5512771A
Cited
US5565700A
Cited
US5389811A
Cited
US5719425A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-01 | 2003-05-03 | 2003-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-01 | 2007-05-03 | 2007-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-01 | 2011-05-03 | 2011-11-02 | $7700.00 | Window Closed / Lapsed |